Single-electron shuttle based on a silicon quantum dot

K.W. Chan (Corresponding Author), M. Möttönen, Antti Kemppinen, N.S. Lai, K.Y. Tan, W.H. Lim, A.S. Dzurak

Research output: Contribution to journalArticleScientificpeer-review

32 Citations (Scopus)

Abstract

We report on single-electron shuttling experiments with a silicon metal-oxide-semiconductor quantum dot at 300 mK. Our system consists of an accumulated electron layer at the Si/SiO2 interface below an aluminum top gate with two additional barrier gates used to deplete the electron gas locally and to define a quantum dot. Directional single-electron shuttling from the source to the drain lead is achieved by applying a dc source-drain bias while driving the barrier gates with an ac voltage of frequency fp. Current plateaus at integer levels of efp are observed up to fp=240 MHz operation frequencies. The observed results are explained by a sequential tunneling model, which suggests that the electron gas may be heated substantially by the ac driving voltage.
Original languageEnglish
Article number212103
Number of pages3
JournalApplied Physics Letters
Volume98
Issue number21
DOIs
Publication statusPublished - 2011
MoE publication typeA1 Journal article-refereed

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quantum dots
electron gas
silicon
electrons
electric potential
silicon oxides
metal oxide semiconductors
integers
plateaus
aluminum

Keywords

  • quantum dots
  • electric measurements
  • tunneling
  • amplifiers
  • III-V semiconductors

Cite this

Chan, K. W., Möttönen, M., Kemppinen, A., Lai, N. S., Tan, K. Y., Lim, W. H., & Dzurak, A. S. (2011). Single-electron shuttle based on a silicon quantum dot. Applied Physics Letters, 98(21), [212103]. https://doi.org/10.1063/1.3593491
Chan, K.W. ; Möttönen, M. ; Kemppinen, Antti ; Lai, N.S. ; Tan, K.Y. ; Lim, W.H. ; Dzurak, A.S. / Single-electron shuttle based on a silicon quantum dot. In: Applied Physics Letters. 2011 ; Vol. 98, No. 21.
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Chan, KW, Möttönen, M, Kemppinen, A, Lai, NS, Tan, KY, Lim, WH & Dzurak, AS 2011, 'Single-electron shuttle based on a silicon quantum dot', Applied Physics Letters, vol. 98, no. 21, 212103. https://doi.org/10.1063/1.3593491

Single-electron shuttle based on a silicon quantum dot. / Chan, K.W. (Corresponding Author); Möttönen, M.; Kemppinen, Antti; Lai, N.S.; Tan, K.Y.; Lim, W.H.; Dzurak, A.S.

In: Applied Physics Letters, Vol. 98, No. 21, 212103, 2011.

Research output: Contribution to journalArticleScientificpeer-review

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AU - Chan, K.W.

AU - Möttönen, M.

AU - Kemppinen, Antti

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AU - Lim, W.H.

AU - Dzurak, A.S.

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AB - We report on single-electron shuttling experiments with a silicon metal-oxide-semiconductor quantum dot at 300 mK. Our system consists of an accumulated electron layer at the Si/SiO2 interface below an aluminum top gate with two additional barrier gates used to deplete the electron gas locally and to define a quantum dot. Directional single-electron shuttling from the source to the drain lead is achieved by applying a dc source-drain bias while driving the barrier gates with an ac voltage of frequency fp. Current plateaus at integer levels of efp are observed up to fp=240 MHz operation frequencies. The observed results are explained by a sequential tunneling model, which suggests that the electron gas may be heated substantially by the ac driving voltage.

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KW - electric measurements

KW - tunneling

KW - amplifiers

KW - III-V semiconductors

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