Single-electron shuttle based on a silicon quantum dot

K.W. Chan (Corresponding Author), M. Möttönen, Antti Kemppinen, N.S. Lai, K.Y. Tan, W.H. Lim, A.S. Dzurak

    Research output: Contribution to journalArticleScientificpeer-review

    37 Citations (Scopus)


    We report on single-electron shuttling experiments with a silicon metal-oxide-semiconductor quantum dot at 300 mK. Our system consists of an accumulated electron layer at the Si/SiO2 interface below an aluminum top gate with two additional barrier gates used to deplete the electron gas locally and to define a quantum dot. Directional single-electron shuttling from the source to the drain lead is achieved by applying a dc source-drain bias while driving the barrier gates with an ac voltage of frequency fp. Current plateaus at integer levels of efp are observed up to fp=240 MHz operation frequencies. The observed results are explained by a sequential tunneling model, which suggests that the electron gas may be heated substantially by the ac driving voltage.
    Original languageEnglish
    Article number212103
    Number of pages3
    JournalApplied Physics Letters
    Issue number21
    Publication statusPublished - 2011
    MoE publication typeA1 Journal article-refereed


    • quantum dots
    • electric measurements
    • tunneling
    • amplifiers
    • III-V semiconductors


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