We report on single-electron shuttling experiments with a silicon metal-oxide-semiconductor quantum dot at 300 mK. Our system consists of an accumulated electron layer at the Si/SiO2 interface below an aluminum top gate with two additional barrier gates used to deplete the electron gas locally and to define a quantum dot. Directional single-electron shuttling from the source to the drain lead is achieved by applying a dc source-drain bias while driving the barrier gates with an ac voltage of frequency fp. Current plateaus at integer levels of efp are observed up to fp=240 MHz operation frequencies. The observed results are explained by a sequential tunneling model, which suggests that the electron gas may be heated substantially by the ac driving voltage.
- quantum dots
- electric measurements
- III-V semiconductors
Chan, K. W., Möttönen, M., Kemppinen, A., Lai, N. S., Tan, K. Y., Lim, W. H., & Dzurak, A. S. (2011). Single-electron shuttle based on a silicon quantum dot. Applied Physics Letters, 98(21), . https://doi.org/10.1063/1.3593491