Single-electron shuttle based on a silicon quantum dot

K.W. Chan (Corresponding Author), M. Möttönen, Antti Kemppinen, N.S. Lai, K.Y. Tan, W.H. Lim, A.S. Dzurak

Research output: Contribution to journalArticleScientificpeer-review

33 Citations (Scopus)


We report on single-electron shuttling experiments with a silicon metal-oxide-semiconductor quantum dot at 300 mK. Our system consists of an accumulated electron layer at the Si/SiO2 interface below an aluminum top gate with two additional barrier gates used to deplete the electron gas locally and to define a quantum dot. Directional single-electron shuttling from the source to the drain lead is achieved by applying a dc source-drain bias while driving the barrier gates with an ac voltage of frequency fp. Current plateaus at integer levels of efp are observed up to fp=240 MHz operation frequencies. The observed results are explained by a sequential tunneling model, which suggests that the electron gas may be heated substantially by the ac driving voltage.
Original languageEnglish
Article number212103
Number of pages3
JournalApplied Physics Letters
Issue number21
Publication statusPublished - 2011
MoE publication typeA1 Journal article-refereed


  • quantum dots
  • electric measurements
  • tunneling
  • amplifiers
  • III-V semiconductors

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