Single electron transistor fabricated on heavily doped silicon-on-insulator substrate

A. Manninen, J. Kauranen, Jukka Pekola, A. Savin, M. Kamp, M. Emmerling, A. Forchel, Mika Prunnila, Jouni Ahopelto

    Research output: Contribution to journalArticleScientificpeer-review

    3 Citations (Scopus)

    Abstract

    Experiments on side-gated silicon single electron transistors (SET) fabricated on a heavily doped thin silicon-on-insulator substrate are reported. Some of the devices showed single-island-like and some multi-island-like behaviour, but the properties of individual samples changed with time. Single-electron gate modulation was observable up to T=100 K, at least. A slow response of SET current to a large change in gate voltage was observed, but the process speeded up under illumination.
    Original languageEnglish
    Pages (from-to)2013-2016
    Number of pages4
    JournalJapanese Journal of Applied Physics
    Volume40
    Issue number3B
    DOIs
    Publication statusPublished - 2001
    MoE publication typeA1 Journal article-refereed

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