Single electron transistor fabricated on heavily doped silicon-on-insulator substrate

A. Manninen, J. Kauranen, Jukka Pekola, A. Savin, M. Kamp, M. Emmerling, A. Forchel, Mika Prunnila, Jouni Ahopelto

    Research output: Contribution to journalArticleScientificpeer-review

    3 Citations (Scopus)

    Abstract

    Experiments on side-gated silicon single electron transistors (SET) fabricated on a heavily doped thin silicon-on-insulator substrate are reported. Some of the devices showed single-island-like and some multi-island-like behaviour, but the properties of individual samples changed with time. Single-electron gate modulation was observable up to T=100 K, at least. A slow response of SET current to a large change in gate voltage was observed, but the process speeded up under illumination.
    Original languageEnglish
    Pages (from-to)2013-2016
    Number of pages4
    JournalJapanese Journal of Applied Physics
    Volume40
    Issue number3B
    DOIs
    Publication statusPublished - 2001
    MoE publication typeA1 Journal article-refereed

    Fingerprint

    Single electron transistors
    single electron transistors
    insulators
    silicon transistors
    Silicon
    silicon
    Substrates
    Lighting
    illumination
    Modulation
    modulation
    Electrons
    Electric potential
    electric potential
    electrons
    Experiments

    Cite this

    Manninen, A. ; Kauranen, J. ; Pekola, Jukka ; Savin, A. ; Kamp, M. ; Emmerling, M. ; Forchel, A. ; Prunnila, Mika ; Ahopelto, Jouni. / Single electron transistor fabricated on heavily doped silicon-on-insulator substrate. In: Japanese Journal of Applied Physics. 2001 ; Vol. 40, No. 3B. pp. 2013-2016.
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    title = "Single electron transistor fabricated on heavily doped silicon-on-insulator substrate",
    abstract = "Experiments on side-gated silicon single electron transistors (SET) fabricated on a heavily doped thin silicon-on-insulator substrate are reported. Some of the devices showed single-island-like and some multi-island-like behaviour, but the properties of individual samples changed with time. Single-electron gate modulation was observable up to T=100 K, at least. A slow response of SET current to a large change in gate voltage was observed, but the process speeded up under illumination.",
    author = "A. Manninen and J. Kauranen and Jukka Pekola and A. Savin and M. Kamp and M. Emmerling and A. Forchel and Mika Prunnila and Jouni Ahopelto",
    year = "2001",
    doi = "10.1143/JJAP.40.2013",
    language = "English",
    volume = "40",
    pages = "2013--2016",
    journal = "Japanese Journal of Applied Physics",
    issn = "0021-4922",
    publisher = "Japan Society of Applied Physics",
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    Manninen, A, Kauranen, J, Pekola, J, Savin, A, Kamp, M, Emmerling, M, Forchel, A, Prunnila, M & Ahopelto, J 2001, 'Single electron transistor fabricated on heavily doped silicon-on-insulator substrate', Japanese Journal of Applied Physics, vol. 40, no. 3B, pp. 2013-2016. https://doi.org/10.1143/JJAP.40.2013

    Single electron transistor fabricated on heavily doped silicon-on-insulator substrate. / Manninen, A.; Kauranen, J.; Pekola, Jukka; Savin, A.; Kamp, M.; Emmerling, M.; Forchel, A.; Prunnila, Mika; Ahopelto, Jouni.

    In: Japanese Journal of Applied Physics, Vol. 40, No. 3B, 2001, p. 2013-2016.

    Research output: Contribution to journalArticleScientificpeer-review

    TY - JOUR

    T1 - Single electron transistor fabricated on heavily doped silicon-on-insulator substrate

    AU - Manninen, A.

    AU - Kauranen, J.

    AU - Pekola, Jukka

    AU - Savin, A.

    AU - Kamp, M.

    AU - Emmerling, M.

    AU - Forchel, A.

    AU - Prunnila, Mika

    AU - Ahopelto, Jouni

    PY - 2001

    Y1 - 2001

    N2 - Experiments on side-gated silicon single electron transistors (SET) fabricated on a heavily doped thin silicon-on-insulator substrate are reported. Some of the devices showed single-island-like and some multi-island-like behaviour, but the properties of individual samples changed with time. Single-electron gate modulation was observable up to T=100 K, at least. A slow response of SET current to a large change in gate voltage was observed, but the process speeded up under illumination.

    AB - Experiments on side-gated silicon single electron transistors (SET) fabricated on a heavily doped thin silicon-on-insulator substrate are reported. Some of the devices showed single-island-like and some multi-island-like behaviour, but the properties of individual samples changed with time. Single-electron gate modulation was observable up to T=100 K, at least. A slow response of SET current to a large change in gate voltage was observed, but the process speeded up under illumination.

    U2 - 10.1143/JJAP.40.2013

    DO - 10.1143/JJAP.40.2013

    M3 - Article

    VL - 40

    SP - 2013

    EP - 2016

    JO - Japanese Journal of Applied Physics

    JF - Japanese Journal of Applied Physics

    SN - 0021-4922

    IS - 3B

    ER -