Single electron transistor fabricated on heavily doped silicon-on-insulator substrate

A. Manninen, J. Kauranen, Jukka Pekola, A. Savin, M. Kamp, M. Emmerling, A. Forchel, Mika Prunnila, Jouni Ahopelto

Research output: Contribution to journalArticleScientificpeer-review

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Abstract

Experiments on side-gated silicon single electron transistors (SET) fabricated on a heavily doped thin silicon-on-insulator substrate are reported. Some of the devices showed single-island-like and some multi-island-like behaviour, but the properties of individual samples changed with time. Single-electron gate modulation was observable up to T=100 K, at least. A slow response of SET current to a large change in gate voltage was observed, but the process speeded up under illumination.
Original languageEnglish
Pages (from-to)2013-2016
Number of pages4
JournalJapanese Journal of Applied Physics
Volume40
Issue number3B
DOIs
Publication statusPublished - 2001
MoE publication typeA1 Journal article-refereed

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Single electron transistors
single electron transistors
insulators
silicon transistors
Silicon
silicon
Substrates
Lighting
illumination
Modulation
modulation
Electrons
Electric potential
electric potential
electrons
Experiments

Cite this

Manninen, A. ; Kauranen, J. ; Pekola, Jukka ; Savin, A. ; Kamp, M. ; Emmerling, M. ; Forchel, A. ; Prunnila, Mika ; Ahopelto, Jouni. / Single electron transistor fabricated on heavily doped silicon-on-insulator substrate. In: Japanese Journal of Applied Physics. 2001 ; Vol. 40, No. 3B. pp. 2013-2016.
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title = "Single electron transistor fabricated on heavily doped silicon-on-insulator substrate",
abstract = "Experiments on side-gated silicon single electron transistors (SET) fabricated on a heavily doped thin silicon-on-insulator substrate are reported. Some of the devices showed single-island-like and some multi-island-like behaviour, but the properties of individual samples changed with time. Single-electron gate modulation was observable up to T=100 K, at least. A slow response of SET current to a large change in gate voltage was observed, but the process speeded up under illumination.",
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year = "2001",
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Manninen, A, Kauranen, J, Pekola, J, Savin, A, Kamp, M, Emmerling, M, Forchel, A, Prunnila, M & Ahopelto, J 2001, 'Single electron transistor fabricated on heavily doped silicon-on-insulator substrate', Japanese Journal of Applied Physics, vol. 40, no. 3B, pp. 2013-2016. https://doi.org/10.1143/JJAP.40.2013

Single electron transistor fabricated on heavily doped silicon-on-insulator substrate. / Manninen, A.; Kauranen, J.; Pekola, Jukka; Savin, A.; Kamp, M.; Emmerling, M.; Forchel, A.; Prunnila, Mika; Ahopelto, Jouni.

In: Japanese Journal of Applied Physics, Vol. 40, No. 3B, 2001, p. 2013-2016.

Research output: Contribution to journalArticleScientificpeer-review

TY - JOUR

T1 - Single electron transistor fabricated on heavily doped silicon-on-insulator substrate

AU - Manninen, A.

AU - Kauranen, J.

AU - Pekola, Jukka

AU - Savin, A.

AU - Kamp, M.

AU - Emmerling, M.

AU - Forchel, A.

AU - Prunnila, Mika

AU - Ahopelto, Jouni

PY - 2001

Y1 - 2001

N2 - Experiments on side-gated silicon single electron transistors (SET) fabricated on a heavily doped thin silicon-on-insulator substrate are reported. Some of the devices showed single-island-like and some multi-island-like behaviour, but the properties of individual samples changed with time. Single-electron gate modulation was observable up to T=100 K, at least. A slow response of SET current to a large change in gate voltage was observed, but the process speeded up under illumination.

AB - Experiments on side-gated silicon single electron transistors (SET) fabricated on a heavily doped thin silicon-on-insulator substrate are reported. Some of the devices showed single-island-like and some multi-island-like behaviour, but the properties of individual samples changed with time. Single-electron gate modulation was observable up to T=100 K, at least. A slow response of SET current to a large change in gate voltage was observed, but the process speeded up under illumination.

U2 - 10.1143/JJAP.40.2013

DO - 10.1143/JJAP.40.2013

M3 - Article

VL - 40

SP - 2013

EP - 2016

JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

SN - 0021-4922

IS - 3B

ER -