Experiments on side-gated silicon single electron transistors (SET) fabricated on a heavily doped thin silicon-on-insulator substrate are reported. Some of the devices showed single-island-like and some multi-island-like behaviour, but the properties of individual samples changed with time. Single-electron gate modulation was observable up to T=100 K, at least. A slow response of SET current to a large change in gate voltage was observed, but the process speeded up under illumination.
Manninen, A., Kauranen, J., Pekola, J., Savin, A., Kamp, M., Emmerling, M., Forchel, A., Prunnila, M., & Ahopelto, J. (2001). Single electron transistor fabricated on heavily doped silicon-on-insulator substrate. Japanese Journal of Applied Physics, 40(3B), 2013-2016. https://doi.org/10.1143/JJAP.40.2013