Single electron transistor fabricated on heavily doped silicon-on-insulator substrate

Antti Manninen, Jari Kauranen, Jukka Pekola, Alexander Savin, Martin Kamp, Monika Emmerling, Alfred Forchel, Mika Prunnila, Jouni Ahopelto

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    3 Citations (Scopus)


    Experiments on side-gated silicon single electron transistors (SET) fabricated on a heavily doped thin silicon-on-insulator substrate are reported. Some of the devices showed single-island-like and some multi-island-like behaviour, but the properties of individual samples changed with time. Single-electron gate modulation was observable up to T=100 K, at least. A slow response of SET current to a large change in gate voltage was observed, but the process speeded up under illumination.
    Original languageEnglish
    Pages (from-to)2013-2016
    Number of pages4
    JournalJapanese Journal of Applied Physics
    Issue number3B
    Publication statusPublished - 2001
    MoE publication typeA1 Journal article-refereed


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