Single electron transistor fabricated on heavily doped silicon-on-insulator substrate

Antti Manninen; Jari Kauranen; Jukka Pekola; Alexander Savin; Martin Kamp; Monika Emmerling; Alfred Forchel; Mika Prunnila; Jouni Ahopelto

doi:10.1143/JJAP.40.2013

Single electron transistor fabricated on heavily doped silicon-on-insulator substrate

Antti Manninen, Jari Kauranen, Jukka Pekola, Alexander Savin, Martin Kamp, Monika Emmerling, Alfred Forchel, Mika Prunnila, Jouni Ahopelto

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Abstract

Experiments on side-gated silicon single electron transistors (SET) fabricated on a heavily doped thin silicon-on-insulator substrate are reported. Some of the devices showed single-island-like and some multi-island-like behaviour, but the properties of individual samples changed with time. Single-electron gate modulation was observable up to T=100 K, at least. A slow response of SET current to a large change in gate voltage was observed, but the process speeded up under illumination.

Original language	English
Pages (from-to)	2013-2016
Number of pages	4
Journal	Japanese Journal of Applied Physics
Volume	40
Issue number	3B
DOIs	https://doi.org/10.1143/JJAP.40.2013
Publication status	Published - 2001
MoE publication type	A1 Journal article-refereed

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10.1143/JJAP.40.2013

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title = "Single electron transistor fabricated on heavily doped silicon-on-insulator substrate",

abstract = "Experiments on side-gated silicon single electron transistors (SET) fabricated on a heavily doped thin silicon-on-insulator substrate are reported. Some of the devices showed single-island-like and some multi-island-like behaviour, but the properties of individual samples changed with time. Single-electron gate modulation was observable up to T=100 K, at least. A slow response of SET current to a large change in gate voltage was observed, but the process speeded up under illumination.",

author = "Antti Manninen and Jari Kauranen and Jukka Pekola and Alexander Savin and Martin Kamp and Monika Emmerling and Alfred Forchel and Mika Prunnila and Jouni Ahopelto",

year = "2001",

doi = "10.1143/JJAP.40.2013",

language = "English",

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journal = "Japanese Journal of Applied Physics",

issn = "0021-4922",

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T1 - Single electron transistor fabricated on heavily doped silicon-on-insulator substrate

AU - Manninen, Antti

AU - Kauranen, Jari

AU - Pekola, Jukka

AU - Savin, Alexander

AU - Kamp, Martin

AU - Emmerling, Monika

AU - Forchel, Alfred

AU - Prunnila, Mika

AU - Ahopelto, Jouni

PY - 2001

Y1 - 2001

N2 - Experiments on side-gated silicon single electron transistors (SET) fabricated on a heavily doped thin silicon-on-insulator substrate are reported. Some of the devices showed single-island-like and some multi-island-like behaviour, but the properties of individual samples changed with time. Single-electron gate modulation was observable up to T=100 K, at least. A slow response of SET current to a large change in gate voltage was observed, but the process speeded up under illumination.

AB - Experiments on side-gated silicon single electron transistors (SET) fabricated on a heavily doped thin silicon-on-insulator substrate are reported. Some of the devices showed single-island-like and some multi-island-like behaviour, but the properties of individual samples changed with time. Single-electron gate modulation was observable up to T=100 K, at least. A slow response of SET current to a large change in gate voltage was observed, but the process speeded up under illumination.

U2 - 10.1143/JJAP.40.2013

DO - 10.1143/JJAP.40.2013

M3 - Article

SN - 0021-4922

VL - 40

SP - 2013

EP - 2016

JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

IS - 3B

ER -

Single electron transistor fabricated on heavily doped silicon-on-insulator substrate

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