Single electron transistor made of multiwalled carbon nanotube using scanning probe manipulation

L. Roschier, J. Penttilä, M. Martin, Unto Tapper, C. Journet, Esko Kauppinen, P. Hakonen, M. Paalanen

    Research output: Contribution to journalArticleScientificpeer-review

    95 Citations (Scopus)

    Abstract

    We positioned semiconducting multiwalled carbon nanotube, using an atomic force microscope, between two gold electrodes at SiO2 surface. Transport measurements exhibit single-electron effects with a charging energy of 24 K. Using the Coulomb staircase model, the capacitances and resistances between the tube and the electrodes can be characterized in detail.
    Original languageEnglish
    Pages (from-to)728-730
    Number of pages3
    JournalApplied Physics Letters
    Volume75
    Issue number5
    DOIs
    Publication statusPublished - 1999
    MoE publication typeA1 Journal article-refereed

    Keywords

    • nanotubes

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  • Cite this

    Roschier, L., Penttilä, J., Martin, M., Tapper, U., Journet, C., Kauppinen, E., Hakonen, P., & Paalanen, M. (1999). Single electron transistor made of multiwalled carbon nanotube using scanning probe manipulation. Applied Physics Letters, 75(5), 728-730. https://doi.org/10.1063/1.124495