Single electron transistor made of multiwalled carbon nanotube using scanning probe manipulation

L. Roschier; J. Penttilä; M. Martin; Unto Tapper; C. Journet; Esko Kauppinen; P. Hakonen; M. Paalanen

doi:10.1063/1.124495

Single electron transistor made of multiwalled carbon nanotube using scanning probe manipulation

L. Roschier
, J. Penttilä
, M. Martin
, Unto Tapper
, C. Journet
, Esko Kauppinen
, P. Hakonen
, M. Paalanen

Helsinki University of Technology
University of Montpellier

Research output: Contribution to journal › Article › Scientific › peer-review

96 Citations (Scopus)

Abstract

We positioned semiconducting multiwalled carbon nanotube, using an atomic force microscope, between two gold electrodes at SiO₂ surface. Transport measurements exhibit single-electron effects with a charging energy of 24 K. Using the Coulomb staircase model, the capacitances and resistances between the tube and the electrodes can be characterized in detail.

Original language	English
Pages (from-to)	728-730
Number of pages	3
Journal	Applied Physics Letters
Volume	75
Issue number	5
DOIs	https://doi.org/10.1063/1.124495
Publication status	Published - 1999
MoE publication type	A1 Journal article-refereed

Keywords

nanotubes

Access to Document

10.1063/1.124495

Cite this

@article{b46305eaf2f84cbc8caa681944aee671,

title = "Single electron transistor made of multiwalled carbon nanotube using scanning probe manipulation",

abstract = "We positioned semiconducting multiwalled carbon nanotube, using an atomic force microscope, between two gold electrodes at SiO2 surface. Transport measurements exhibit single-electron effects with a charging energy of 24 K. Using the Coulomb staircase model, the capacitances and resistances between the tube and the electrodes can be characterized in detail.",

keywords = "nanotubes",

author = "L. Roschier and J. Penttil{\"a} and M. Martin and Unto Tapper and C. Journet and Esko Kauppinen and P. Hakonen and M. Paalanen",

year = "1999",

doi = "10.1063/1.124495",

language = "English",

volume = "75",

pages = "728--730",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics (AIP)",

number = "5",

}

TY - JOUR

T1 - Single electron transistor made of multiwalled carbon nanotube using scanning probe manipulation

AU - Roschier, L.

AU - Penttilä, J.

AU - Martin, M.

AU - Tapper, Unto

AU - Journet, C.

AU - Kauppinen, Esko

AU - Hakonen, P.

AU - Paalanen, M.

PY - 1999

Y1 - 1999

N2 - We positioned semiconducting multiwalled carbon nanotube, using an atomic force microscope, between two gold electrodes at SiO2 surface. Transport measurements exhibit single-electron effects with a charging energy of 24 K. Using the Coulomb staircase model, the capacitances and resistances between the tube and the electrodes can be characterized in detail.

AB - We positioned semiconducting multiwalled carbon nanotube, using an atomic force microscope, between two gold electrodes at SiO2 surface. Transport measurements exhibit single-electron effects with a charging energy of 24 K. Using the Coulomb staircase model, the capacitances and resistances between the tube and the electrodes can be characterized in detail.

KW - nanotubes

U2 - 10.1063/1.124495

DO - 10.1063/1.124495

M3 - Article

SN - 0003-6951

VL - 75

SP - 728

EP - 730

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 5

ER -

Single electron transistor made of multiwalled carbon nanotube using scanning probe manipulation

Abstract

Keywords

Access to Document

Fingerprint

Cite this