Single-walled carbon nanotube network field effect transistor as a humidity sensor

R. Mudimela Prasantha, Kestutis Grigoras, I.V. Anoshkin, Aapo Varpula, Vladimir Ermolov, A.S. Anisimov, A.G. Nasibulin, S. Novikov, E.I. Kauppinen

Research output: Contribution to journalArticleScientificpeer-review

6 Citations (Scopus)

Abstract

Single-walled carbon nanotube network field effect transistors were fabricated and studied as humidity sensors. Sensing responses were altered by changing the gate voltage. At the open channel state (negative gate voltage), humidity pulse resulted in the decrease of the source-drain current, and, vice versa, the increase in the source-drain current was observed at the positive gate voltage. This effect was explained by the electron-donating nature of water molecules. The operation speed and signal intensity was found to be dependent on the gate voltage polarity. The positive or negative change in current with humidity pulse at zero-gate voltage was found to depend on the previous state of the gate electrode (positive or negative voltage, respectively). Those characteristics were explained by the charge traps in the gate dielectric altering the effective gate voltage, which influenced the operation of field effect transistor.
Original languageEnglish
Article number496546
Number of pages7
JournalJournal of Sensors
Volume2012
DOIs
Publication statusPublished - 2012
MoE publication typeA1 Journal article-refereed

Fingerprint

Humidity sensors
Single-walled carbon nanotubes (SWCN)
Field effect transistors
humidity
field effect transistors
carbon nanotubes
sensors
Electric potential
electric potential
Drain current
Atmospheric humidity
Gate dielectrics
pulses
polarity
traps
Electrodes
Molecules
Electrons
electrodes

Cite this

Mudimela Prasantha, R. ; Grigoras, Kestutis ; Anoshkin, I.V. ; Varpula, Aapo ; Ermolov, Vladimir ; Anisimov, A.S. ; Nasibulin, A.G. ; Novikov, S. ; Kauppinen, E.I. / Single-walled carbon nanotube network field effect transistor as a humidity sensor. In: Journal of Sensors. 2012 ; Vol. 2012.
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title = "Single-walled carbon nanotube network field effect transistor as a humidity sensor",
abstract = "Single-walled carbon nanotube network field effect transistors were fabricated and studied as humidity sensors. Sensing responses were altered by changing the gate voltage. At the open channel state (negative gate voltage), humidity pulse resulted in the decrease of the source-drain current, and, vice versa, the increase in the source-drain current was observed at the positive gate voltage. This effect was explained by the electron-donating nature of water molecules. The operation speed and signal intensity was found to be dependent on the gate voltage polarity. The positive or negative change in current with humidity pulse at zero-gate voltage was found to depend on the previous state of the gate electrode (positive or negative voltage, respectively). Those characteristics were explained by the charge traps in the gate dielectric altering the effective gate voltage, which influenced the operation of field effect transistor.",
author = "{Mudimela Prasantha}, R. and Kestutis Grigoras and I.V. Anoshkin and Aapo Varpula and Vladimir Ermolov and A.S. Anisimov and A.G. Nasibulin and S. Novikov and E.I. Kauppinen",
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Mudimela Prasantha, R, Grigoras, K, Anoshkin, IV, Varpula, A, Ermolov, V, Anisimov, AS, Nasibulin, AG, Novikov, S & Kauppinen, EI 2012, 'Single-walled carbon nanotube network field effect transistor as a humidity sensor', Journal of Sensors, vol. 2012, 496546. https://doi.org/10.1155/2012/496546

Single-walled carbon nanotube network field effect transistor as a humidity sensor. / Mudimela Prasantha, R.; Grigoras, Kestutis; Anoshkin, I.V.; Varpula, Aapo; Ermolov, Vladimir; Anisimov, A.S.; Nasibulin, A.G.; Novikov, S.; Kauppinen, E.I.

In: Journal of Sensors, Vol. 2012, 496546, 2012.

Research output: Contribution to journalArticleScientificpeer-review

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AU - Mudimela Prasantha, R.

AU - Grigoras, Kestutis

AU - Anoshkin, I.V.

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AU - Ermolov, Vladimir

AU - Anisimov, A.S.

AU - Nasibulin, A.G.

AU - Novikov, S.

AU - Kauppinen, E.I.

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AB - Single-walled carbon nanotube network field effect transistors were fabricated and studied as humidity sensors. Sensing responses were altered by changing the gate voltage. At the open channel state (negative gate voltage), humidity pulse resulted in the decrease of the source-drain current, and, vice versa, the increase in the source-drain current was observed at the positive gate voltage. This effect was explained by the electron-donating nature of water molecules. The operation speed and signal intensity was found to be dependent on the gate voltage polarity. The positive or negative change in current with humidity pulse at zero-gate voltage was found to depend on the previous state of the gate electrode (positive or negative voltage, respectively). Those characteristics were explained by the charge traps in the gate dielectric altering the effective gate voltage, which influenced the operation of field effect transistor.

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