Abstract
| Original language | English |
|---|---|
| Pages (from-to) | 256-259 |
| Number of pages | 4 |
| Journal | Physica E: Low-Dimensional Systems and Nanostructures |
| Volume | 34 |
| Issue number | 1-2 |
| DOIs | |
| Publication status | Published - 2006 |
| MoE publication type | A1 Journal article-refereed |
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Keywords
- metal-insulator transition
- 2D metal-insulator transition
- Si-MOS structures
- electronic transport
- silicon inversion layers
- silicon-on-insulator
- SOI
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Small mass enhancement near the metal-insulator transition in gated silicon inversion layers. / Lindner, B.; Pillwein, G.; Brunthaler, G. (Corresponding Author); Ahopelto, Jouni; Prunnila, Mika.
In: Physica E: Low-Dimensional Systems and Nanostructures, Vol. 34, No. 1-2, 2006, p. 256-259.Research output: Contribution to journal › Article › Scientific › peer-review
TY - JOUR
T1 - Small mass enhancement near the metal-insulator transition in gated silicon inversion layers
AU - Lindner, B.
AU - Pillwein, G.
AU - Brunthaler, G.
AU - Ahopelto, Jouni
AU - Prunnila, Mika
PY - 2006
Y1 - 2006
N2 - The strong resistivity changes in the metallic state of two-dimensional electron systems have recently been assigned to quantum interaction corrections in the ballistic regime. We have performed analysis of Shubnikov–de Haas oscillations on high-mobility silicon inversion layers where we have explicitly taken into account that the back scattering angle has different influence on momentum relaxation and quantum life time. The consistent analysis under the assumption of the ballistic interaction corrections leads to smaller increase of the effective mass with decreasing electron density as usually reported.
AB - The strong resistivity changes in the metallic state of two-dimensional electron systems have recently been assigned to quantum interaction corrections in the ballistic regime. We have performed analysis of Shubnikov–de Haas oscillations on high-mobility silicon inversion layers where we have explicitly taken into account that the back scattering angle has different influence on momentum relaxation and quantum life time. The consistent analysis under the assumption of the ballistic interaction corrections leads to smaller increase of the effective mass with decreasing electron density as usually reported.
KW - metal-insulator transition
KW - 2D metal-insulator transition
KW - Si-MOS structures
KW - electronic transport
KW - silicon inversion layers
KW - silicon-on-insulator
KW - SOI
U2 - 10.1016/j.physe.2006.03.130
DO - 10.1016/j.physe.2006.03.130
M3 - Article
VL - 34
SP - 256
EP - 259
JO - Physica E: Low-Dimensional Systems and Nanostructures
JF - Physica E: Low-Dimensional Systems and Nanostructures
SN - 1386-9477
IS - 1-2
ER -