Small mass enhancement near the metal-insulator transition in gated silicon inversion layers

B. Lindner, G. Pillwein, G. Brunthaler (Corresponding Author), Jouni Ahopelto, Mika Prunnila

    Research output: Contribution to journalArticleScientificpeer-review

    Abstract

    The strong resistivity changes in the metallic state of two-dimensional electron systems have recently been assigned to quantum interaction corrections in the ballistic regime. We have performed analysis of Shubnikov–de Haas oscillations on high-mobility silicon inversion layers where we have explicitly taken into account that the back scattering angle has different influence on momentum relaxation and quantum life time. The consistent analysis under the assumption of the ballistic interaction corrections leads to smaller increase of the effective mass with decreasing electron density as usually reported.
    Original languageEnglish
    Pages (from-to)256-259
    Number of pages4
    JournalPhysica E: Low-Dimensional Systems and Nanostructures
    Volume34
    Issue number1-2
    DOIs
    Publication statusPublished - 2006
    MoE publication typeA1 Journal article-refereed

    Keywords

    • metal-insulator transition
    • 2D metal-insulator transition
    • Si-MOS structures
    • electronic transport
    • silicon inversion layers
    • silicon-on-insulator
    • SOI

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