Small mass enhancement near the metal-insulator transition in gated silicon inversion layers

B. Lindner, G. Pillwein, G. Brunthaler (Corresponding Author), Jouni Ahopelto, Mika Prunnila

Research output: Contribution to journalArticleScientificpeer-review

Abstract

The strong resistivity changes in the metallic state of two-dimensional electron systems have recently been assigned to quantum interaction corrections in the ballistic regime. We have performed analysis of Shubnikov–de Haas oscillations on high-mobility silicon inversion layers where we have explicitly taken into account that the back scattering angle has different influence on momentum relaxation and quantum life time. The consistent analysis under the assumption of the ballistic interaction corrections leads to smaller increase of the effective mass with decreasing electron density as usually reported.
Original languageEnglish
Pages (from-to)256-259
Number of pages4
JournalPhysica E: Low-Dimensional Systems and Nanostructures
Volume34
Issue number1-2
DOIs
Publication statusPublished - 2006
MoE publication typeA1 Journal article-refereed

Fingerprint

Inversion layers
Metal insulator transition
Silicon
Ballistics
ballistics
insulators
inversions
augmentation
silicon
metals
Carrier concentration
Momentum
interactions
Scattering
momentum
life (durability)
oscillations
electrical resistivity
Electrons
scattering

Keywords

  • metal-insulator transition
  • 2D metal-insulator transition
  • Si-MOS structures
  • electronic transport
  • silicon inversion layers
  • silicon-on-insulator
  • SOI

Cite this

@article{a169ee8560e447379406d9f2a24e52e4,
title = "Small mass enhancement near the metal-insulator transition in gated silicon inversion layers",
abstract = "The strong resistivity changes in the metallic state of two-dimensional electron systems have recently been assigned to quantum interaction corrections in the ballistic regime. We have performed analysis of Shubnikov–de Haas oscillations on high-mobility silicon inversion layers where we have explicitly taken into account that the back scattering angle has different influence on momentum relaxation and quantum life time. The consistent analysis under the assumption of the ballistic interaction corrections leads to smaller increase of the effective mass with decreasing electron density as usually reported.",
keywords = "metal-insulator transition, 2D metal-insulator transition, Si-MOS structures, electronic transport, silicon inversion layers, silicon-on-insulator, SOI",
author = "B. Lindner and G. Pillwein and G. Brunthaler and Jouni Ahopelto and Mika Prunnila",
year = "2006",
doi = "10.1016/j.physe.2006.03.130",
language = "English",
volume = "34",
pages = "256--259",
journal = "Physica E: Low-Dimensional Systems and Nanostructures",
issn = "1386-9477",
publisher = "Elsevier",
number = "1-2",

}

Small mass enhancement near the metal-insulator transition in gated silicon inversion layers. / Lindner, B.; Pillwein, G.; Brunthaler, G. (Corresponding Author); Ahopelto, Jouni; Prunnila, Mika.

In: Physica E: Low-Dimensional Systems and Nanostructures, Vol. 34, No. 1-2, 2006, p. 256-259.

Research output: Contribution to journalArticleScientificpeer-review

TY - JOUR

T1 - Small mass enhancement near the metal-insulator transition in gated silicon inversion layers

AU - Lindner, B.

AU - Pillwein, G.

AU - Brunthaler, G.

AU - Ahopelto, Jouni

AU - Prunnila, Mika

PY - 2006

Y1 - 2006

N2 - The strong resistivity changes in the metallic state of two-dimensional electron systems have recently been assigned to quantum interaction corrections in the ballistic regime. We have performed analysis of Shubnikov–de Haas oscillations on high-mobility silicon inversion layers where we have explicitly taken into account that the back scattering angle has different influence on momentum relaxation and quantum life time. The consistent analysis under the assumption of the ballistic interaction corrections leads to smaller increase of the effective mass with decreasing electron density as usually reported.

AB - The strong resistivity changes in the metallic state of two-dimensional electron systems have recently been assigned to quantum interaction corrections in the ballistic regime. We have performed analysis of Shubnikov–de Haas oscillations on high-mobility silicon inversion layers where we have explicitly taken into account that the back scattering angle has different influence on momentum relaxation and quantum life time. The consistent analysis under the assumption of the ballistic interaction corrections leads to smaller increase of the effective mass with decreasing electron density as usually reported.

KW - metal-insulator transition

KW - 2D metal-insulator transition

KW - Si-MOS structures

KW - electronic transport

KW - silicon inversion layers

KW - silicon-on-insulator

KW - SOI

U2 - 10.1016/j.physe.2006.03.130

DO - 10.1016/j.physe.2006.03.130

M3 - Article

VL - 34

SP - 256

EP - 259

JO - Physica E: Low-Dimensional Systems and Nanostructures

JF - Physica E: Low-Dimensional Systems and Nanostructures

SN - 1386-9477

IS - 1-2

ER -