Small mass enhancement near the metal-insulator transition in gated silicon inversion layers

B. Lindner; G. Pillwein; G. Brunthaler; Jouni Ahopelto; Mika Prunnila

doi:10.1016/j.physe.2006.03.130

Small mass enhancement near the metal-insulator transition in gated silicon inversion layers

B. Lindner, G. Pillwein, G. Brunthaler (Corresponding Author), Jouni Ahopelto, Mika Prunnila

Research output: Contribution to journal › Article › Scientific › peer-review

Abstract

The strong resistivity changes in the metallic state of two-dimensional electron systems have recently been assigned to quantum interaction corrections in the ballistic regime. We have performed analysis of Shubnikov–de Haas oscillations on high-mobility silicon inversion layers where we have explicitly taken into account that the back scattering angle has different influence on momentum relaxation and quantum life time. The consistent analysis under the assumption of the ballistic interaction corrections leads to smaller increase of the effective mass with decreasing electron density as usually reported.

Original language	English
Pages (from-to)	256-259
Number of pages	4
Journal	Physica E: Low-Dimensional Systems and Nanostructures
Volume	34
Issue number	1-2
DOIs	https://doi.org/10.1016/j.physe.2006.03.130
Publication status	Published - 2006
MoE publication type	A1 Journal article-refereed

Keywords

metal-insulator transition
2D metal-insulator transition
Si-MOS structures
electronic transport
silicon inversion layers
silicon-on-insulator
SOI

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10.1016/j.physe.2006.03.130

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@article{a169ee8560e447379406d9f2a24e52e4,

title = "Small mass enhancement near the metal-insulator transition in gated silicon inversion layers",

abstract = "The strong resistivity changes in the metallic state of two-dimensional electron systems have recently been assigned to quantum interaction corrections in the ballistic regime. We have performed analysis of Shubnikov–de Haas oscillations on high-mobility silicon inversion layers where we have explicitly taken into account that the back scattering angle has different influence on momentum relaxation and quantum life time. The consistent analysis under the assumption of the ballistic interaction corrections leads to smaller increase of the effective mass with decreasing electron density as usually reported.",

keywords = "metal-insulator transition, 2D metal-insulator transition, Si-MOS structures, electronic transport, silicon inversion layers, silicon-on-insulator, SOI",

author = "B. Lindner and G. Pillwein and G. Brunthaler and Jouni Ahopelto and Mika Prunnila",

year = "2006",

doi = "10.1016/j.physe.2006.03.130",

language = "English",

volume = "34",

pages = "256--259",

journal = "Physica E: Low-Dimensional Systems and Nanostructures",

issn = "1386-9477",

publisher = "Elsevier",

number = "1-2",

}

Small mass enhancement near the metal-insulator transition in gated silicon inversion layers. / Lindner, B.; Pillwein, G.; Brunthaler, G. (Corresponding Author); Ahopelto, Jouni ; Prunnila, Mika.

In: Physica E: Low-Dimensional Systems and Nanostructures, Vol. 34, No. 1-2, 2006, p. 256-259.

Research output: Contribution to journal › Article › Scientific › peer-review

TY - JOUR

T1 - Small mass enhancement near the metal-insulator transition in gated silicon inversion layers

AU - Lindner, B.

AU - Pillwein, G.

AU - Brunthaler, G.

AU - Ahopelto, Jouni

AU - Prunnila, Mika

PY - 2006

Y1 - 2006

N2 - The strong resistivity changes in the metallic state of two-dimensional electron systems have recently been assigned to quantum interaction corrections in the ballistic regime. We have performed analysis of Shubnikov–de Haas oscillations on high-mobility silicon inversion layers where we have explicitly taken into account that the back scattering angle has different influence on momentum relaxation and quantum life time. The consistent analysis under the assumption of the ballistic interaction corrections leads to smaller increase of the effective mass with decreasing electron density as usually reported.

AB - The strong resistivity changes in the metallic state of two-dimensional electron systems have recently been assigned to quantum interaction corrections in the ballistic regime. We have performed analysis of Shubnikov–de Haas oscillations on high-mobility silicon inversion layers where we have explicitly taken into account that the back scattering angle has different influence on momentum relaxation and quantum life time. The consistent analysis under the assumption of the ballistic interaction corrections leads to smaller increase of the effective mass with decreasing electron density as usually reported.

KW - metal-insulator transition

KW - 2D metal-insulator transition

KW - Si-MOS structures

KW - electronic transport

KW - silicon inversion layers

KW - silicon-on-insulator

KW - SOI

U2 - 10.1016/j.physe.2006.03.130

DO - 10.1016/j.physe.2006.03.130

M3 - Article

VL - 34

SP - 256

EP - 259

JO - Physica E: Low-Dimensional Systems and Nanostructures

JF - Physica E: Low-Dimensional Systems and Nanostructures

SN - 1386-9477

IS - 1-2

ER -

Small mass enhancement near the metal-insulator transition in gated silicon inversion layers

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Keywords

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