Small mass enhancement near the metal-insulator transition in gated silicon inversion layers

B. Lindner, G. Pillwein, G. Brunthaler (Corresponding Author), Jouni Ahopelto, Mika Prunnila

    Research output: Contribution to journalArticleScientificpeer-review

    Abstract

    The strong resistivity changes in the metallic state of two-dimensional electron systems have recently been assigned to quantum interaction corrections in the ballistic regime. We have performed analysis of Shubnikov–de Haas oscillations on high-mobility silicon inversion layers where we have explicitly taken into account that the back scattering angle has different influence on momentum relaxation and quantum life time. The consistent analysis under the assumption of the ballistic interaction corrections leads to smaller increase of the effective mass with decreasing electron density as usually reported.
    Original languageEnglish
    Pages (from-to)256-259
    Number of pages4
    JournalPhysica E: Low-Dimensional Systems and Nanostructures
    Volume34
    Issue number1-2
    DOIs
    Publication statusPublished - 2006
    MoE publication typeA1 Journal article-refereed

    Fingerprint

    Inversion layers
    Metal insulator transition
    Silicon
    Ballistics
    ballistics
    insulators
    inversions
    augmentation
    silicon
    metals
    Carrier concentration
    Momentum
    interactions
    Scattering
    momentum
    life (durability)
    oscillations
    electrical resistivity
    Electrons
    scattering

    Keywords

    • metal-insulator transition
    • 2D metal-insulator transition
    • Si-MOS structures
    • electronic transport
    • silicon inversion layers
    • silicon-on-insulator
    • SOI

    Cite this

    @article{a169ee8560e447379406d9f2a24e52e4,
    title = "Small mass enhancement near the metal-insulator transition in gated silicon inversion layers",
    abstract = "The strong resistivity changes in the metallic state of two-dimensional electron systems have recently been assigned to quantum interaction corrections in the ballistic regime. We have performed analysis of Shubnikov–de Haas oscillations on high-mobility silicon inversion layers where we have explicitly taken into account that the back scattering angle has different influence on momentum relaxation and quantum life time. The consistent analysis under the assumption of the ballistic interaction corrections leads to smaller increase of the effective mass with decreasing electron density as usually reported.",
    keywords = "metal-insulator transition, 2D metal-insulator transition, Si-MOS structures, electronic transport, silicon inversion layers, silicon-on-insulator, SOI",
    author = "B. Lindner and G. Pillwein and G. Brunthaler and Jouni Ahopelto and Mika Prunnila",
    year = "2006",
    doi = "10.1016/j.physe.2006.03.130",
    language = "English",
    volume = "34",
    pages = "256--259",
    journal = "Physica E: Low-Dimensional Systems and Nanostructures",
    issn = "1386-9477",
    publisher = "Elsevier",
    number = "1-2",

    }

    Small mass enhancement near the metal-insulator transition in gated silicon inversion layers. / Lindner, B.; Pillwein, G.; Brunthaler, G. (Corresponding Author); Ahopelto, Jouni; Prunnila, Mika.

    In: Physica E: Low-Dimensional Systems and Nanostructures, Vol. 34, No. 1-2, 2006, p. 256-259.

    Research output: Contribution to journalArticleScientificpeer-review

    TY - JOUR

    T1 - Small mass enhancement near the metal-insulator transition in gated silicon inversion layers

    AU - Lindner, B.

    AU - Pillwein, G.

    AU - Brunthaler, G.

    AU - Ahopelto, Jouni

    AU - Prunnila, Mika

    PY - 2006

    Y1 - 2006

    N2 - The strong resistivity changes in the metallic state of two-dimensional electron systems have recently been assigned to quantum interaction corrections in the ballistic regime. We have performed analysis of Shubnikov–de Haas oscillations on high-mobility silicon inversion layers where we have explicitly taken into account that the back scattering angle has different influence on momentum relaxation and quantum life time. The consistent analysis under the assumption of the ballistic interaction corrections leads to smaller increase of the effective mass with decreasing electron density as usually reported.

    AB - The strong resistivity changes in the metallic state of two-dimensional electron systems have recently been assigned to quantum interaction corrections in the ballistic regime. We have performed analysis of Shubnikov–de Haas oscillations on high-mobility silicon inversion layers where we have explicitly taken into account that the back scattering angle has different influence on momentum relaxation and quantum life time. The consistent analysis under the assumption of the ballistic interaction corrections leads to smaller increase of the effective mass with decreasing electron density as usually reported.

    KW - metal-insulator transition

    KW - 2D metal-insulator transition

    KW - Si-MOS structures

    KW - electronic transport

    KW - silicon inversion layers

    KW - silicon-on-insulator

    KW - SOI

    U2 - 10.1016/j.physe.2006.03.130

    DO - 10.1016/j.physe.2006.03.130

    M3 - Article

    VL - 34

    SP - 256

    EP - 259

    JO - Physica E: Low-Dimensional Systems and Nanostructures

    JF - Physica E: Low-Dimensional Systems and Nanostructures

    SN - 1386-9477

    IS - 1-2

    ER -