The small-signal ac response of granular n-type semiconductors is calculated analytically using the drift-diffusion theory when electronic trapping at grain boundaries is present. An electrical equivalent circuit (EEC) model of a granular n-type semiconductor is presented. The analytical model is verified with numerical simulation performed by SILVACO ATLAS. The agreement between the analytical and numerical results is very good in a broad frequency range at low dc bias voltages.
|Journal||Physica Scripta T|
|Publication status||Published - 1 Dec 2010|
|MoE publication type||A4 Article in a conference publication|
|Event||23rd Nordic Semiconductor Meeting, NSM 2009 - Reykjavik, Iceland|
Duration: 14 Jun 2009 → 17 Jun 2009