Small-signal analysis of granular semiconductors

Aapo Varpula; Juha Sinkkonen; Sergey Novikov

doi:10.1088/0031-8949/2010/T141/014002

Small-signal analysis of granular semiconductors

Aapo Varpula, Juha Sinkkonen, Sergey Novikov

Not published at VTT

Aalto University

Research output: Contribution to journal › Article in a proceedings journal › Scientific › peer-review

Abstract

The small-signal ac response of granular n-type semiconductors is calculated analytically using the drift-diffusion theory when electronic trapping at grain boundaries is present. An electrical equivalent circuit (EEC) model of a granular n-type semiconductor is presented. The analytical model is verified with numerical simulation performed by SILVACO ATLAS. The agreement between the analytical and numerical results is very good in a broad frequency range at low dc bias voltages.

Original language	English
Article number	014002
Journal	Physica Scripta T
Volume	T141
DOIs	https://doi.org/10.1088/0031-8949/2010/T141/014002
Publication status	Published - 1 Dec 2010
MoE publication type	A4 Article in a conference publication
Event	23rd Nordic Semiconductor Meeting, NSM 2009 - Reykjavik, Iceland Duration: 14 Jun 2009 → 17 Jun 2009

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10.1088/0031-8949/2010/T141/014002

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title = "Small-signal analysis of granular semiconductors",

abstract = "The small-signal ac response of granular n-type semiconductors is calculated analytically using the drift-diffusion theory when electronic trapping at grain boundaries is present. An electrical equivalent circuit (EEC) model of a granular n-type semiconductor is presented. The analytical model is verified with numerical simulation performed by SILVACO ATLAS. The agreement between the analytical and numerical results is very good in a broad frequency range at low dc bias voltages.",

author = "Aapo Varpula and Juha Sinkkonen and Sergey Novikov",

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doi = "10.1088/0031-8949/2010/T141/014002",

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T1 - Small-signal analysis of granular semiconductors

AU - Varpula, Aapo

AU - Sinkkonen, Juha

AU - Novikov, Sergey

PY - 2010/12/1

Y1 - 2010/12/1

N2 - The small-signal ac response of granular n-type semiconductors is calculated analytically using the drift-diffusion theory when electronic trapping at grain boundaries is present. An electrical equivalent circuit (EEC) model of a granular n-type semiconductor is presented. The analytical model is verified with numerical simulation performed by SILVACO ATLAS. The agreement between the analytical and numerical results is very good in a broad frequency range at low dc bias voltages.

AB - The small-signal ac response of granular n-type semiconductors is calculated analytically using the drift-diffusion theory when electronic trapping at grain boundaries is present. An electrical equivalent circuit (EEC) model of a granular n-type semiconductor is presented. The analytical model is verified with numerical simulation performed by SILVACO ATLAS. The agreement between the analytical and numerical results is very good in a broad frequency range at low dc bias voltages.

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U2 - 10.1088/0031-8949/2010/T141/014002

DO - 10.1088/0031-8949/2010/T141/014002

M3 - Article in a proceedings journal

AN - SCOPUS:79952430857

SN - 0031-8949

VL - T141

JO - Physica Scripta

JF - Physica Scripta

M1 - 014002

T2 - 23rd Nordic Semiconductor Meeting, NSM 2009

Y2 - 14 June 2009 through 17 June 2009

ER -

Small-signal analysis of granular semiconductors

Abstract

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