Abstract
The small-signal ac response of granular n-type semiconductors is calculated analytically using the drift-diffusion theory when electronic trapping at grain boundaries is present. An electrical equivalent circuit (EEC) model of a granular n-type semiconductor is presented. The analytical model is verified with numerical simulation performed by SILVACO ATLAS. The agreement between the analytical and numerical results is very good in a broad frequency range at low dc bias voltages.
| Original language | English |
|---|---|
| Article number | 014002 |
| Journal | Physica Scripta T |
| Volume | T141 |
| DOIs | |
| Publication status | Published - 1 Dec 2010 |
| MoE publication type | A4 Article in a conference publication |
| Event | 23rd Nordic Semiconductor Meeting, NSM 2009 - Reykjavik, Iceland Duration: 14 Jun 2009 → 17 Jun 2009 |
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