Abstract
Reordering of silicon surface as a result of annealing in
high temperature environment has gained interest
recently. Annealing in pure hydrogen and preferably in
reduced pressure has been studied for more than a decade
to reduce the surface roughness that originates from wet
or dry etching. The study has widened into
high-throughput engineering involving now also argon
atmosphere, and many applications are being investigated.
The potential applications of silicon surface annealing
include mirror surfaces and low-loss waveguides in
integrated optics, electrical vias through silicon
wafers, and various microsystems, such as membranes,
filters, microresonators and microfluidic structures.
Original language | English |
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Publication status | Published - 2009 |
MoE publication type | Not Eligible |
Event | Physics Days - Fysiikan päivät 2009: "Physics Crossing Borders". 43rd annual meeting of the Finnish Physical Society - Espoo, Finland Duration: 12 Mar 2009 → 14 Mar 2009 Conference number: 43 |
Conference
Conference | Physics Days - Fysiikan päivät 2009 |
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Country/Territory | Finland |
City | Espoo |
Period | 12/03/09 → 14/03/09 |
Keywords
- smoothing
- silicon
- argon
- surface diffusion