Smoothing of as-etched silicon surface by thermal annealing in argon atmosphere

    Research output: Contribution to conferenceConference PosterScientific

    Abstract

    Reordering of silicon surface as a result of annealing in high temperature environment has gained interest recently. Annealing in pure hydrogen and preferably in reduced pressure has been studied for more than a decade to reduce the surface roughness that originates from wet or dry etching. The study has widened into high-throughput engineering involving now also argon atmosphere, and many applications are being investigated. The potential applications of silicon surface annealing include mirror surfaces and low-loss waveguides in integrated optics, electrical vias through silicon wafers, and various microsystems, such as membranes, filters, microresonators and microfluidic structures.
    Original languageEnglish
    Publication statusPublished - 2009
    MoE publication typeNot Eligible
    EventPhysics Days - Fysiikan päivät 2009: "Physics Crossing Borders". 43rd annual meeting of the Finnish Physical Society - Espoo, Finland
    Duration: 12 Mar 200914 Mar 2009
    Conference number: 43

    Conference

    ConferencePhysics Days - Fysiikan päivät 2009
    CountryFinland
    CityEspoo
    Period12/03/0914/03/09

    Keywords

    • smoothing
    • silicon
    • argon
    • surface diffusion

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  • Cite this

    Kolari, K., Vehmas, T., & Aalto, T. (2009). Smoothing of as-etched silicon surface by thermal annealing in argon atmosphere. Poster session presented at Physics Days - Fysiikan päivät 2009, Espoo, Finland. http://ltl.tkk.fi/~ttheikki/physday09abs/1038.pdf