Smoothing of as-etched silicon surface by thermal annealing in argon atmosphere

    Research output: Contribution to conferenceConference PosterScientific

    Abstract

    Reordering of silicon surface as a result of annealing in high temperature environment has gained interest recently. Annealing in pure hydrogen and preferably in reduced pressure has been studied for more than a decade to reduce the surface roughness that originates from wet or dry etching. The study has widened into high-throughput engineering involving now also argon atmosphere, and many applications are being investigated. The potential applications of silicon surface annealing include mirror surfaces and low-loss waveguides in integrated optics, electrical vias through silicon wafers, and various microsystems, such as membranes, filters, microresonators and microfluidic structures.
    Original languageEnglish
    Publication statusPublished - 2009
    MoE publication typeNot Eligible
    EventPhysics Days - Fysiikan päivät 2009: "Physics Crossing Borders". 43rd annual meeting of the Finnish Physical Society - Espoo, Finland
    Duration: 12 Mar 200914 Mar 2009
    Conference number: 43

    Conference

    ConferencePhysics Days - Fysiikan päivät 2009
    CountryFinland
    CityEspoo
    Period12/03/0914/03/09

    Fingerprint

    smoothing
    argon
    atmospheres
    annealing
    silicon
    high temperature environments
    integrated optics
    surface roughness
    etching
    wafers
    engineering
    mirrors
    membranes
    waveguides
    filters
    hydrogen

    Keywords

    • smoothing
    • silicon
    • argon
    • surface diffusion

    Cite this

    Kolari, K., Vehmas, T., & Aalto, T. (2009). Smoothing of as-etched silicon surface by thermal annealing in argon atmosphere. Poster session presented at Physics Days - Fysiikan päivät 2009, Espoo, Finland.
    Kolari, Kai ; Vehmas, Tapani ; Aalto, Timo. / Smoothing of as-etched silicon surface by thermal annealing in argon atmosphere. Poster session presented at Physics Days - Fysiikan päivät 2009, Espoo, Finland.
    @conference{ace71116f39e4f588514b7b3e8213d2c,
    title = "Smoothing of as-etched silicon surface by thermal annealing in argon atmosphere",
    abstract = "Reordering of silicon surface as a result of annealing in high temperature environment has gained interest recently. Annealing in pure hydrogen and preferably in reduced pressure has been studied for more than a decade to reduce the surface roughness that originates from wet or dry etching. The study has widened into high-throughput engineering involving now also argon atmosphere, and many applications are being investigated. The potential applications of silicon surface annealing include mirror surfaces and low-loss waveguides in integrated optics, electrical vias through silicon wafers, and various microsystems, such as membranes, filters, microresonators and microfluidic structures.",
    keywords = "smoothing, silicon, argon, surface diffusion",
    author = "Kai Kolari and Tapani Vehmas and Timo Aalto",
    year = "2009",
    language = "English",
    note = "Physics Days - Fysiikan p{\"a}iv{\"a}t 2009 : {"}Physics Crossing Borders{"}. 43rd annual meeting of the Finnish Physical Society ; Conference date: 12-03-2009 Through 14-03-2009",

    }

    Kolari, K, Vehmas, T & Aalto, T 2009, 'Smoothing of as-etched silicon surface by thermal annealing in argon atmosphere', Physics Days - Fysiikan päivät 2009, Espoo, Finland, 12/03/09 - 14/03/09.

    Smoothing of as-etched silicon surface by thermal annealing in argon atmosphere. / Kolari, Kai; Vehmas, Tapani; Aalto, Timo.

    2009. Poster session presented at Physics Days - Fysiikan päivät 2009, Espoo, Finland.

    Research output: Contribution to conferenceConference PosterScientific

    TY - CONF

    T1 - Smoothing of as-etched silicon surface by thermal annealing in argon atmosphere

    AU - Kolari, Kai

    AU - Vehmas, Tapani

    AU - Aalto, Timo

    PY - 2009

    Y1 - 2009

    N2 - Reordering of silicon surface as a result of annealing in high temperature environment has gained interest recently. Annealing in pure hydrogen and preferably in reduced pressure has been studied for more than a decade to reduce the surface roughness that originates from wet or dry etching. The study has widened into high-throughput engineering involving now also argon atmosphere, and many applications are being investigated. The potential applications of silicon surface annealing include mirror surfaces and low-loss waveguides in integrated optics, electrical vias through silicon wafers, and various microsystems, such as membranes, filters, microresonators and microfluidic structures.

    AB - Reordering of silicon surface as a result of annealing in high temperature environment has gained interest recently. Annealing in pure hydrogen and preferably in reduced pressure has been studied for more than a decade to reduce the surface roughness that originates from wet or dry etching. The study has widened into high-throughput engineering involving now also argon atmosphere, and many applications are being investigated. The potential applications of silicon surface annealing include mirror surfaces and low-loss waveguides in integrated optics, electrical vias through silicon wafers, and various microsystems, such as membranes, filters, microresonators and microfluidic structures.

    KW - smoothing

    KW - silicon

    KW - argon

    KW - surface diffusion

    M3 - Conference Poster

    ER -

    Kolari K, Vehmas T, Aalto T. Smoothing of as-etched silicon surface by thermal annealing in argon atmosphere. 2009. Poster session presented at Physics Days - Fysiikan päivät 2009, Espoo, Finland.