Smoothing of microfabricated silicon features by thermal annealing in reducing or inert atmospheres

Kai Kolari, Tapani Vehmas, Olli Svensk, Pekka Törmä, Timo Aalto

    Research output: Contribution to journalArticleScientificpeer-review

    4 Citations (Scopus)

    Abstract

    In this work, high-temperature annealing of reactive ion etched silicon microstructures in H2 and Ar gases is studied. Three types of structural features were etched with four different masks into lang100rang-oriented silicon wafers. Scanning electron microscope and atomic force microscope (AFM) results show that when smoothing due to surface diffusion and desorption of silicon is taking place in both the argon and hydrogen gas environments, the three types of features respond differently to the treatments. The surface diffusion was observed to be strongly dependent on temperature in argon, whereas the transport was more linear and controllable in the hydrogen gas environment. For hydrogen, AFM studies were performed to observe the details of the smoothing process. Finally, some potential applications of these transport phenomena are discussed.
    Original languageEnglish
    Article number014017
    JournalPhysica Scripta
    Volume2010
    Issue numberT141
    DOIs
    Publication statusPublished - 2010
    MoE publication typeA1 Journal article-refereed

    Fingerprint

    inert atmosphere
    Annealing
    smoothing
    Hydrogen
    Atmosphere
    Smoothing
    Surface Diffusion
    Silicon
    Atomic Force Microscope
    surface diffusion
    atmospheres
    annealing
    silicon
    hydrogen
    microscopes
    gases
    argon
    Transport Phenomena
    Desorption
    Scanning Electron Microscope

    Cite this

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    title = "Smoothing of microfabricated silicon features by thermal annealing in reducing or inert atmospheres",
    abstract = "In this work, high-temperature annealing of reactive ion etched silicon microstructures in H2 and Ar gases is studied. Three types of structural features were etched with four different masks into lang100rang-oriented silicon wafers. Scanning electron microscope and atomic force microscope (AFM) results show that when smoothing due to surface diffusion and desorption of silicon is taking place in both the argon and hydrogen gas environments, the three types of features respond differently to the treatments. The surface diffusion was observed to be strongly dependent on temperature in argon, whereas the transport was more linear and controllable in the hydrogen gas environment. For hydrogen, AFM studies were performed to observe the details of the smoothing process. Finally, some potential applications of these transport phenomena are discussed.",
    author = "Kai Kolari and Tapani Vehmas and Olli Svensk and Pekka T{\"o}rm{\"a} and Timo Aalto",
    year = "2010",
    doi = "10.1088/0031-8949/2010/T141/014017",
    language = "English",
    volume = "2010",
    journal = "Physica Scripta",
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    Smoothing of microfabricated silicon features by thermal annealing in reducing or inert atmospheres. / Kolari, Kai; Vehmas, Tapani; Svensk, Olli; Törmä, Pekka; Aalto, Timo.

    In: Physica Scripta, Vol. 2010, No. T141, 014017, 2010.

    Research output: Contribution to journalArticleScientificpeer-review

    TY - JOUR

    T1 - Smoothing of microfabricated silicon features by thermal annealing in reducing or inert atmospheres

    AU - Kolari, Kai

    AU - Vehmas, Tapani

    AU - Svensk, Olli

    AU - Törmä, Pekka

    AU - Aalto, Timo

    PY - 2010

    Y1 - 2010

    N2 - In this work, high-temperature annealing of reactive ion etched silicon microstructures in H2 and Ar gases is studied. Three types of structural features were etched with four different masks into lang100rang-oriented silicon wafers. Scanning electron microscope and atomic force microscope (AFM) results show that when smoothing due to surface diffusion and desorption of silicon is taking place in both the argon and hydrogen gas environments, the three types of features respond differently to the treatments. The surface diffusion was observed to be strongly dependent on temperature in argon, whereas the transport was more linear and controllable in the hydrogen gas environment. For hydrogen, AFM studies were performed to observe the details of the smoothing process. Finally, some potential applications of these transport phenomena are discussed.

    AB - In this work, high-temperature annealing of reactive ion etched silicon microstructures in H2 and Ar gases is studied. Three types of structural features were etched with four different masks into lang100rang-oriented silicon wafers. Scanning electron microscope and atomic force microscope (AFM) results show that when smoothing due to surface diffusion and desorption of silicon is taking place in both the argon and hydrogen gas environments, the three types of features respond differently to the treatments. The surface diffusion was observed to be strongly dependent on temperature in argon, whereas the transport was more linear and controllable in the hydrogen gas environment. For hydrogen, AFM studies were performed to observe the details of the smoothing process. Finally, some potential applications of these transport phenomena are discussed.

    U2 - 10.1088/0031-8949/2010/T141/014017

    DO - 10.1088/0031-8949/2010/T141/014017

    M3 - Article

    VL - 2010

    JO - Physica Scripta

    JF - Physica Scripta

    SN - 0031-8949

    IS - T141

    M1 - 014017

    ER -