Smoothing of microfabricated silicon features by thermal annealing in reducing or inert atmospheres

Kai Kolari, Tapani Vehmas, Olli Svensk, Pekka Törmä, Timo Aalto

    Research output: Contribution to journalArticleScientificpeer-review

    4 Citations (Scopus)

    Abstract

    In this work, high-temperature annealing of reactive ion etched silicon microstructures in H2 and Ar gases is studied. Three types of structural features were etched with four different masks into lang100rang-oriented silicon wafers. Scanning electron microscope and atomic force microscope (AFM) results show that when smoothing due to surface diffusion and desorption of silicon is taking place in both the argon and hydrogen gas environments, the three types of features respond differently to the treatments. The surface diffusion was observed to be strongly dependent on temperature in argon, whereas the transport was more linear and controllable in the hydrogen gas environment. For hydrogen, AFM studies were performed to observe the details of the smoothing process. Finally, some potential applications of these transport phenomena are discussed.
    Original languageEnglish
    Article number014017
    JournalPhysica Scripta
    Volume2010
    Issue numberT141
    DOIs
    Publication statusPublished - 2010
    MoE publication typeA1 Journal article-refereed

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