Smoothing of microfabricated silicon features by thermal annealing in reducing or inert atmospheres

Kai Kolari, Tapani Vehmas, Olli Svensk, Pekka Törmä, Timo Aalto

Research output: Contribution to journalArticleScientificpeer-review

4 Citations (Scopus)

Abstract

In this work, high-temperature annealing of reactive ion etched silicon microstructures in H2 and Ar gases is studied. Three types of structural features were etched with four different masks into lang100rang-oriented silicon wafers. Scanning electron microscope and atomic force microscope (AFM) results show that when smoothing due to surface diffusion and desorption of silicon is taking place in both the argon and hydrogen gas environments, the three types of features respond differently to the treatments. The surface diffusion was observed to be strongly dependent on temperature in argon, whereas the transport was more linear and controllable in the hydrogen gas environment. For hydrogen, AFM studies were performed to observe the details of the smoothing process. Finally, some potential applications of these transport phenomena are discussed.
Original languageEnglish
Article number014017
JournalPhysica Scripta
Volume2010
Issue numberT141
DOIs
Publication statusPublished - 2010
MoE publication typeA1 Journal article-refereed

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inert atmosphere
Annealing
smoothing
Hydrogen
Atmosphere
Smoothing
Surface Diffusion
Silicon
Atomic Force Microscope
surface diffusion
atmospheres
annealing
silicon
hydrogen
microscopes
gases
argon
Transport Phenomena
Desorption
Scanning Electron Microscope

Cite this

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title = "Smoothing of microfabricated silicon features by thermal annealing in reducing or inert atmospheres",
abstract = "In this work, high-temperature annealing of reactive ion etched silicon microstructures in H2 and Ar gases is studied. Three types of structural features were etched with four different masks into lang100rang-oriented silicon wafers. Scanning electron microscope and atomic force microscope (AFM) results show that when smoothing due to surface diffusion and desorption of silicon is taking place in both the argon and hydrogen gas environments, the three types of features respond differently to the treatments. The surface diffusion was observed to be strongly dependent on temperature in argon, whereas the transport was more linear and controllable in the hydrogen gas environment. For hydrogen, AFM studies were performed to observe the details of the smoothing process. Finally, some potential applications of these transport phenomena are discussed.",
author = "Kai Kolari and Tapani Vehmas and Olli Svensk and Pekka T{\"o}rm{\"a} and Timo Aalto",
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Smoothing of microfabricated silicon features by thermal annealing in reducing or inert atmospheres. / Kolari, Kai; Vehmas, Tapani; Svensk, Olli; Törmä, Pekka; Aalto, Timo.

In: Physica Scripta, Vol. 2010, No. T141, 014017, 2010.

Research output: Contribution to journalArticleScientificpeer-review

TY - JOUR

T1 - Smoothing of microfabricated silicon features by thermal annealing in reducing or inert atmospheres

AU - Kolari, Kai

AU - Vehmas, Tapani

AU - Svensk, Olli

AU - Törmä, Pekka

AU - Aalto, Timo

PY - 2010

Y1 - 2010

N2 - In this work, high-temperature annealing of reactive ion etched silicon microstructures in H2 and Ar gases is studied. Three types of structural features were etched with four different masks into lang100rang-oriented silicon wafers. Scanning electron microscope and atomic force microscope (AFM) results show that when smoothing due to surface diffusion and desorption of silicon is taking place in both the argon and hydrogen gas environments, the three types of features respond differently to the treatments. The surface diffusion was observed to be strongly dependent on temperature in argon, whereas the transport was more linear and controllable in the hydrogen gas environment. For hydrogen, AFM studies were performed to observe the details of the smoothing process. Finally, some potential applications of these transport phenomena are discussed.

AB - In this work, high-temperature annealing of reactive ion etched silicon microstructures in H2 and Ar gases is studied. Three types of structural features were etched with four different masks into lang100rang-oriented silicon wafers. Scanning electron microscope and atomic force microscope (AFM) results show that when smoothing due to surface diffusion and desorption of silicon is taking place in both the argon and hydrogen gas environments, the three types of features respond differently to the treatments. The surface diffusion was observed to be strongly dependent on temperature in argon, whereas the transport was more linear and controllable in the hydrogen gas environment. For hydrogen, AFM studies were performed to observe the details of the smoothing process. Finally, some potential applications of these transport phenomena are discussed.

U2 - 10.1088/0031-8949/2010/T141/014017

DO - 10.1088/0031-8949/2010/T141/014017

M3 - Article

VL - 2010

JO - Physica Scripta

JF - Physica Scripta

SN - 0031-8949

IS - T141

M1 - 014017

ER -