Smoothing of microfabricated silicon features by thermal annealing in reducing or inert atmospheres

Kai Kolari (Corresponding Author), Tapani Vehmas, Olli Svensk, Pekka Törmä, Timo Aalto

Research output: Contribution to journalArticle in a proceedings journalScientificpeer-review

Abstract

Reordering of silicon surface as a result of annealing in reducing or inert environment at high temperature has gained interest recently. Annealing in pure hydrogen and preferably in reduced pressure has been studied for more than a decade to reduce the surface roughness that originates from wet or deep reactive ion etching (DRIE). The study has widened into high-throughput engineering involving now also argon atmosphere. In contrast to hydrogen, the rearrangement of atoms starts abruptly and requires absence of oxygen and nitrogen. The potential applications of silicon surface annealing include mirror surfaces and low-loss waveguides in integrated optics, electrical vias through silicon wafers, and various microsystems, such as membranes, filters, microresonators and microfluidic structures.
Original languageEnglish
Article number014017
JournalPhysica Scripta
Volume2010
Issue numberT141
DOIs
Publication statusPublished - 2009
MoE publication typeA4 Article in a conference publication
Event23rd Nordic Semiconductor Meeting 2009, NSM-23 - Reykjavik, Iceland
Duration: 12 Jun 200914 Jun 2009

Fingerprint

inert atmosphere
Annealing
smoothing
Atmosphere
Smoothing
Silicon
atmospheres
Hydrogen
annealing
silicon
Microresonators
Integrated Optics
Microsystems
Reordering
integrated optics
Microfluidics
hydrogen
Etching
Surface Roughness
Rearrangement

Keywords

  • Smoothing
  • silicon
  • argon
  • surface diffusion

Cite this

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title = "Smoothing of microfabricated silicon features by thermal annealing in reducing or inert atmospheres",
abstract = "Reordering of silicon surface as a result of annealing in reducing or inert environment at high temperature has gained interest recently. Annealing in pure hydrogen and preferably in reduced pressure has been studied for more than a decade to reduce the surface roughness that originates from wet or deep reactive ion etching (DRIE). The study has widened into high-throughput engineering involving now also argon atmosphere. In contrast to hydrogen, the rearrangement of atoms starts abruptly and requires absence of oxygen and nitrogen. The potential applications of silicon surface annealing include mirror surfaces and low-loss waveguides in integrated optics, electrical vias through silicon wafers, and various microsystems, such as membranes, filters, microresonators and microfluidic structures.",
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author = "Kai Kolari and Tapani Vehmas and Olli Svensk and Pekka T{\"o}rm{\"a} and Timo Aalto",
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language = "English",
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Smoothing of microfabricated silicon features by thermal annealing in reducing or inert atmospheres. / Kolari, Kai (Corresponding Author); Vehmas, Tapani; Svensk, Olli; Törmä, Pekka; Aalto, Timo.

In: Physica Scripta, Vol. 2010, No. T141, 014017, 2009.

Research output: Contribution to journalArticle in a proceedings journalScientificpeer-review

TY - JOUR

T1 - Smoothing of microfabricated silicon features by thermal annealing in reducing or inert atmospheres

AU - Kolari, Kai

AU - Vehmas, Tapani

AU - Svensk, Olli

AU - Törmä, Pekka

AU - Aalto, Timo

PY - 2009

Y1 - 2009

N2 - Reordering of silicon surface as a result of annealing in reducing or inert environment at high temperature has gained interest recently. Annealing in pure hydrogen and preferably in reduced pressure has been studied for more than a decade to reduce the surface roughness that originates from wet or deep reactive ion etching (DRIE). The study has widened into high-throughput engineering involving now also argon atmosphere. In contrast to hydrogen, the rearrangement of atoms starts abruptly and requires absence of oxygen and nitrogen. The potential applications of silicon surface annealing include mirror surfaces and low-loss waveguides in integrated optics, electrical vias through silicon wafers, and various microsystems, such as membranes, filters, microresonators and microfluidic structures.

AB - Reordering of silicon surface as a result of annealing in reducing or inert environment at high temperature has gained interest recently. Annealing in pure hydrogen and preferably in reduced pressure has been studied for more than a decade to reduce the surface roughness that originates from wet or deep reactive ion etching (DRIE). The study has widened into high-throughput engineering involving now also argon atmosphere. In contrast to hydrogen, the rearrangement of atoms starts abruptly and requires absence of oxygen and nitrogen. The potential applications of silicon surface annealing include mirror surfaces and low-loss waveguides in integrated optics, electrical vias through silicon wafers, and various microsystems, such as membranes, filters, microresonators and microfluidic structures.

KW - Smoothing

KW - silicon

KW - argon

KW - surface diffusion

U2 - 10.1088/0031-8949/2010/T141/014017

DO - 10.1088/0031-8949/2010/T141/014017

M3 - Article in a proceedings journal

VL - 2010

JO - Physica Scripta

JF - Physica Scripta

SN - 0031-8949

IS - T141

M1 - 014017

ER -