Abstract
| Original language | English |
|---|---|
| Article number | 014017 |
| Journal | Physica Scripta |
| Volume | 2010 |
| Issue number | T141 |
| DOIs | |
| Publication status | Published - 2009 |
| MoE publication type | A4 Article in a conference publication |
| Event | 23rd Nordic Semiconductor Meeting 2009, NSM-23 - Reykjavik, Iceland Duration: 12 Jun 2009 → 14 Jun 2009 |
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Keywords
- Smoothing
- silicon
- argon
- surface diffusion
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Smoothing of microfabricated silicon features by thermal annealing in reducing or inert atmospheres. / Kolari, Kai (Corresponding Author); Vehmas, Tapani; Svensk, Olli; Törmä, Pekka; Aalto, Timo.
In: Physica Scripta, Vol. 2010, No. T141, 014017, 2009.Research output: Contribution to journal › Article in a proceedings journal › Scientific › peer-review
TY - JOUR
T1 - Smoothing of microfabricated silicon features by thermal annealing in reducing or inert atmospheres
AU - Kolari, Kai
AU - Vehmas, Tapani
AU - Svensk, Olli
AU - Törmä, Pekka
AU - Aalto, Timo
PY - 2009
Y1 - 2009
N2 - Reordering of silicon surface as a result of annealing in reducing or inert environment at high temperature has gained interest recently. Annealing in pure hydrogen and preferably in reduced pressure has been studied for more than a decade to reduce the surface roughness that originates from wet or deep reactive ion etching (DRIE). The study has widened into high-throughput engineering involving now also argon atmosphere. In contrast to hydrogen, the rearrangement of atoms starts abruptly and requires absence of oxygen and nitrogen. The potential applications of silicon surface annealing include mirror surfaces and low-loss waveguides in integrated optics, electrical vias through silicon wafers, and various microsystems, such as membranes, filters, microresonators and microfluidic structures.
AB - Reordering of silicon surface as a result of annealing in reducing or inert environment at high temperature has gained interest recently. Annealing in pure hydrogen and preferably in reduced pressure has been studied for more than a decade to reduce the surface roughness that originates from wet or deep reactive ion etching (DRIE). The study has widened into high-throughput engineering involving now also argon atmosphere. In contrast to hydrogen, the rearrangement of atoms starts abruptly and requires absence of oxygen and nitrogen. The potential applications of silicon surface annealing include mirror surfaces and low-loss waveguides in integrated optics, electrical vias through silicon wafers, and various microsystems, such as membranes, filters, microresonators and microfluidic structures.
KW - Smoothing
KW - silicon
KW - argon
KW - surface diffusion
U2 - 10.1088/0031-8949/2010/T141/014017
DO - 10.1088/0031-8949/2010/T141/014017
M3 - Article in a proceedings journal
VL - 2010
JO - Physica Scripta
JF - Physica Scripta
SN - 0031-8949
IS - T141
M1 - 014017
ER -