Abstract
Reordering of silicon surface as a result of annealing in reducing or
inert environment at high temperature has gained interest recently. Annealing
in pure hydrogen and preferably in reduced pressure has been studied for more
than a decade to reduce the surface roughness that originates from wet or deep
reactive ion etching (DRIE). The study has widened into high-throughput
engineering involving now also argon atmosphere. In contrast to hydrogen, the
rearrangement of atoms starts abruptly and requires absence of oxygen and
nitrogen. The potential applications of silicon surface annealing include
mirror surfaces and low-loss waveguides in integrated optics, electrical vias
through silicon wafers, and various microsystems, such as membranes, filters,
microresonators and microfluidic structures.
Original language | English |
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Article number | 014017 |
Journal | Physica Scripta |
Volume | 2010 |
Issue number | T141 |
DOIs | |
Publication status | Published - 2009 |
MoE publication type | A4 Article in a conference publication |
Event | 23rd Nordic Semiconductor Meeting, NSM 2009 - Reykjavik, Iceland Duration: 14 Jun 2009 → 17 Jun 2009 |
Keywords
- Smoothing
- silicon
- argon
- surface diffusion