Smoothing of microfabricated silicon features by thermal annealing in reducing or inert atmospheres

Kai Kolari (Corresponding Author), Tapani Vehmas, Olli Svensk, Pekka Törmä, Timo Aalto

    Research output: Contribution to journalArticle in a proceedings journalScientificpeer-review

    Abstract

    Reordering of silicon surface as a result of annealing in reducing or inert environment at high temperature has gained interest recently. Annealing in pure hydrogen and preferably in reduced pressure has been studied for more than a decade to reduce the surface roughness that originates from wet or deep reactive ion etching (DRIE). The study has widened into high-throughput engineering involving now also argon atmosphere. In contrast to hydrogen, the rearrangement of atoms starts abruptly and requires absence of oxygen and nitrogen. The potential applications of silicon surface annealing include mirror surfaces and low-loss waveguides in integrated optics, electrical vias through silicon wafers, and various microsystems, such as membranes, filters, microresonators and microfluidic structures.
    Original languageEnglish
    Article number014017
    JournalPhysica Scripta
    Volume2010
    Issue numberT141
    DOIs
    Publication statusPublished - 2009
    MoE publication typeA4 Article in a conference publication
    Event23rd Nordic Semiconductor Meeting, NSM 2009 - Reykjavik, Iceland
    Duration: 14 Jun 200917 Jun 2009

    Fingerprint

    inert atmosphere
    Annealing
    smoothing
    Atmosphere
    Smoothing
    Silicon
    atmospheres
    Hydrogen
    annealing
    silicon
    Microresonators
    Integrated Optics
    Microsystems
    Reordering
    integrated optics
    Microfluidics
    hydrogen
    Etching
    Surface Roughness
    Rearrangement

    Keywords

    • Smoothing
    • silicon
    • argon
    • surface diffusion

    Cite this

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    title = "Smoothing of microfabricated silicon features by thermal annealing in reducing or inert atmospheres",
    abstract = "Reordering of silicon surface as a result of annealing in reducing or inert environment at high temperature has gained interest recently. Annealing in pure hydrogen and preferably in reduced pressure has been studied for more than a decade to reduce the surface roughness that originates from wet or deep reactive ion etching (DRIE). The study has widened into high-throughput engineering involving now also argon atmosphere. In contrast to hydrogen, the rearrangement of atoms starts abruptly and requires absence of oxygen and nitrogen. The potential applications of silicon surface annealing include mirror surfaces and low-loss waveguides in integrated optics, electrical vias through silicon wafers, and various microsystems, such as membranes, filters, microresonators and microfluidic structures.",
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    author = "Kai Kolari and Tapani Vehmas and Olli Svensk and Pekka T{\"o}rm{\"a} and Timo Aalto",
    year = "2009",
    doi = "10.1088/0031-8949/2010/T141/014017",
    language = "English",
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    Smoothing of microfabricated silicon features by thermal annealing in reducing or inert atmospheres. / Kolari, Kai (Corresponding Author); Vehmas, Tapani; Svensk, Olli; Törmä, Pekka; Aalto, Timo.

    In: Physica Scripta, Vol. 2010, No. T141, 014017, 2009.

    Research output: Contribution to journalArticle in a proceedings journalScientificpeer-review

    TY - JOUR

    T1 - Smoothing of microfabricated silicon features by thermal annealing in reducing or inert atmospheres

    AU - Kolari, Kai

    AU - Vehmas, Tapani

    AU - Svensk, Olli

    AU - Törmä, Pekka

    AU - Aalto, Timo

    PY - 2009

    Y1 - 2009

    N2 - Reordering of silicon surface as a result of annealing in reducing or inert environment at high temperature has gained interest recently. Annealing in pure hydrogen and preferably in reduced pressure has been studied for more than a decade to reduce the surface roughness that originates from wet or deep reactive ion etching (DRIE). The study has widened into high-throughput engineering involving now also argon atmosphere. In contrast to hydrogen, the rearrangement of atoms starts abruptly and requires absence of oxygen and nitrogen. The potential applications of silicon surface annealing include mirror surfaces and low-loss waveguides in integrated optics, electrical vias through silicon wafers, and various microsystems, such as membranes, filters, microresonators and microfluidic structures.

    AB - Reordering of silicon surface as a result of annealing in reducing or inert environment at high temperature has gained interest recently. Annealing in pure hydrogen and preferably in reduced pressure has been studied for more than a decade to reduce the surface roughness that originates from wet or deep reactive ion etching (DRIE). The study has widened into high-throughput engineering involving now also argon atmosphere. In contrast to hydrogen, the rearrangement of atoms starts abruptly and requires absence of oxygen and nitrogen. The potential applications of silicon surface annealing include mirror surfaces and low-loss waveguides in integrated optics, electrical vias through silicon wafers, and various microsystems, such as membranes, filters, microresonators and microfluidic structures.

    KW - Smoothing

    KW - silicon

    KW - argon

    KW - surface diffusion

    U2 - 10.1088/0031-8949/2010/T141/014017

    DO - 10.1088/0031-8949/2010/T141/014017

    M3 - Article in a proceedings journal

    VL - 2010

    JO - Physica Scripta

    JF - Physica Scripta

    SN - 0031-8949

    IS - T141

    M1 - 014017

    ER -