SOI CMOS modeling at radio frequencies

Jan Saijets; Markku Åberg

SOI CMOS modeling at radio frequencies

Research output: Contribution to conference › Conference article › Scientific

Abstract

The RF properties of silicon-on-insulator (SOI) MOSFETs were studied from the modeling point of view. Especially the question whether conventional bulk models like BSIM3v3 or EKV can used to model SOI devices was studied. Two kind of SOI processes were studied: Peregrine 0.5 m silicon-on-sapphire (SOS) and Honeywell 0.35 m partially depleted (PD) SOI technology.

Original language	English
Publication status	Published - 2003
MoE publication type	Not Eligible
Event	Nokian sisäinen RF-seminaari - Helsinki, Finland Duration: 13 Nov 2003 → 14 Nov 2003

Seminar

Seminar	Nokian sisäinen RF-seminaari
Country/Territory	Finland
City	Helsinki
Period	13/11/03 → 14/11/03

Keywords

SOI
CMOS
modeling
RF

Cite this

@conference{eb17da90e6d34ec48c8d2b20ea846706,

title = "SOI CMOS modeling at radio frequencies",

abstract = "The RF properties of silicon-on-insulator (SOI) MOSFETs were studied from the modeling point of view. Especially the question whether conventional bulk models like BSIM3v3 or EKV can used to model SOI devices was studied. Two kind of SOI processes were studied: Peregrine 0.5 m silicon-on-sapphire (SOS) and Honeywell 0.35 m partially depleted (PD) SOI technology.",

keywords = "SOI, CMOS, modeling, RF",

author = "Jan Saijets and Markku {\AA}berg",

note = "Project code: T3SU00072; Nokian sis{\"a}inen RF-seminaari ; Conference date: 13-11-2003 Through 14-11-2003",

year = "2003",

language = "English",

}

TY - CONF

T1 - SOI CMOS modeling at radio frequencies

AU - Saijets, Jan

AU - Åberg, Markku

N1 - Project code: T3SU00072

PY - 2003

Y1 - 2003

N2 - The RF properties of silicon-on-insulator (SOI) MOSFETs were studied from the modeling point of view. Especially the question whether conventional bulk models like BSIM3v3 or EKV can used to model SOI devices was studied. Two kind of SOI processes were studied: Peregrine 0.5 m silicon-on-sapphire (SOS) and Honeywell 0.35 m partially depleted (PD) SOI technology.

AB - The RF properties of silicon-on-insulator (SOI) MOSFETs were studied from the modeling point of view. Especially the question whether conventional bulk models like BSIM3v3 or EKV can used to model SOI devices was studied. Two kind of SOI processes were studied: Peregrine 0.5 m silicon-on-sapphire (SOS) and Honeywell 0.35 m partially depleted (PD) SOI technology.

KW - SOI

KW - CMOS

KW - modeling

KW - RF

M3 - Conference article

T2 - Nokian sisäinen RF-seminaari

Y2 - 13 November 2003 through 14 November 2003

ER -

SOI CMOS modeling at radio frequencies

Abstract

Seminar

Keywords

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Cite this