The RF properties of silicon-on-insulator (SOI) MOSFETs were studied from the modeling point of view. Especially the question whether conventional bulk models like BSIM3v3 or EKV can used to model SOI devices was studied. Two kind of SOI processes were studied: Peregrine 0.5 m silicon-on-sapphire (SOS) and Honeywell 0.35 m partially depleted (PD) SOI technology.
|Publication status||Published - 2003|
|MoE publication type||Not Eligible|
|Event||Nokian sisäinen RF-seminaari - Helsinki, Finland|
Duration: 13 Nov 2003 → 14 Nov 2003
|Seminar||Nokian sisäinen RF-seminaari|
|Period||13/11/03 → 14/11/03|