SOI CMOS modeling at radio frequencies

Jan Saijets, Markku Åberg

    Research output: Contribution to conferenceConference articleScientific


    The RF properties of silicon-on-insulator (SOI) MOSFETs were studied from the modeling point of view. Especially the question whether conventional bulk models like BSIM3v3 or EKV can used to model SOI devices was studied. Two kind of SOI processes were studied: Peregrine 0.5 m silicon-on-sapphire (SOS) and Honeywell 0.35 m partially depleted (PD) SOI technology.
    Original languageEnglish
    Publication statusPublished - 2003
    MoE publication typeNot Eligible
    EventNokian sisäinen RF-seminaari - Helsinki, Finland
    Duration: 13 Nov 200314 Nov 2003


    SeminarNokian sisäinen RF-seminaari


    • SOI
    • CMOS
    • modeling
    • RF

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