SOI CMOS modeling at radio frequencies

Jan Saijets, Markku Åberg

    Research output: Contribution to conferenceConference articleScientific

    Abstract

    The RF properties of silicon-on-insulator (SOI) MOSFETs were studied from the modeling point of view. Especially the question whether conventional bulk models like BSIM3v3 or EKV can used to model SOI devices was studied. Two kind of SOI processes were studied: Peregrine 0.5 m silicon-on-sapphire (SOS) and Honeywell 0.35 m partially depleted (PD) SOI technology.
    Original languageEnglish
    Publication statusPublished - 2003
    MoE publication typeNot Eligible
    EventNokian sisäinen RF-seminaari - Helsinki, Finland
    Duration: 13 Nov 200314 Nov 2003

    Seminar

    SeminarNokian sisäinen RF-seminaari
    CountryFinland
    CityHelsinki
    Period13/11/0314/11/03

    Keywords

    • SOI
    • CMOS
    • modeling
    • RF

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  • Cite this

    Saijets, J., & Åberg, M. (2003). SOI CMOS modeling at radio frequencies. Paper presented at Nokian sisäinen RF-seminaari, Helsinki, Finland.