SOI technology for quantum information processing

S. De Franceschi; L. Hutin; R. Maurand; L. Bourdet; Heorhii Bohuslavskyi; A. Corna; D. Kotekar-Patil; S. Barraud; X. Jehl; Y.-M. Niquet; M. Sanquer; M. Vinet

doi:10.1109/iedm.2016.7838409

SOI technology for quantum information processing

S. De Franceschi, L. Hutin, R. Maurand, L. Bourdet, Heorhii Bohuslavskyi, A. Corna, D. Kotekar-Patil, S. Barraud, X. Jehl, Y.-M. Niquet, M. Sanquer, M. Vinet

Not published at VTT

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

Abstract

We present recent progress towards the implementation of a scalable quantum processor based on fully-depleted silicon-on-insulator (FDSOI) technology. In particular, we discuss an approach where the elementary bits of quantum information - so-called qubits - are encoded in the spin degree of freedom of gate-confined holes in p-type devices. We show how a hole-spin can be efficiently manipulated by means of a microwave excitation applied to the corresponding confining gate. The hole spin state can be read out and reinitialized through a Pauli blockade mechanism. The studied devices are derived from silicon nanowire field-effect transistors. We discuss their prospects for scalability and, more broadly, the potential advantages of FDSOI technology.

Original language	English
Title of host publication	2016 IEEE International Electron Devices Meeting (IEDM)
Publisher	IEEE Institute of Electrical and Electronic Engineers
ISBN (Electronic)	978-1-5090-3902-9
DOIs	https://doi.org/10.1109/iedm.2016.7838409
Publication status	Published - Dec 2016
MoE publication type	A4 Article in a conference publication

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Franceschi, S. D., Hutin, L., Maurand, R., Bourdet, L., Bohuslavskyi, H., Corna, A., Kotekar-Patil, D., Barraud, S., Jehl, X., Niquet, Y.-M., Sanquer, M., & Vinet, M. (2016). SOI technology for quantum information processing. In 2016 IEEE International Electron Devices Meeting (IEDM) IEEE Institute of Electrical and Electronic Engineers. https://doi.org/10.1109/iedm.2016.7838409

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title = "SOI technology for quantum information processing",

abstract = "We present recent progress towards the implementation of a scalable quantum processor based on fully-depleted silicon-on-insulator (FDSOI) technology. In particular, we discuss an approach where the elementary bits of quantum information - so-called qubits - are encoded in the spin degree of freedom of gate-confined holes in p-type devices. We show how a hole-spin can be efficiently manipulated by means of a microwave excitation applied to the corresponding confining gate. The hole spin state can be read out and reinitialized through a Pauli blockade mechanism. The studied devices are derived from silicon nanowire field-effect transistors. We discuss their prospects for scalability and, more broadly, the potential advantages of FDSOI technology.",

author = "Franceschi, {S. De} and L. Hutin and R. Maurand and L. Bourdet and Heorhii Bohuslavskyi and A. Corna and D. Kotekar-Patil and S. Barraud and X. Jehl and Y.-M. Niquet and M. Sanquer and M. Vinet",

year = "2016",

month = dec,

doi = "10.1109/iedm.2016.7838409",

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AU - Franceschi, S. De

AU - Hutin, L.

AU - Maurand, R.

AU - Bourdet, L.

AU - Bohuslavskyi, Heorhii

AU - Corna, A.

AU - Kotekar-Patil, D.

AU - Barraud, S.

AU - Jehl, X.

AU - Niquet, Y.-M.

AU - Sanquer, M.

AU - Vinet, M.

PY - 2016/12

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N2 - We present recent progress towards the implementation of a scalable quantum processor based on fully-depleted silicon-on-insulator (FDSOI) technology. In particular, we discuss an approach where the elementary bits of quantum information - so-called qubits - are encoded in the spin degree of freedom of gate-confined holes in p-type devices. We show how a hole-spin can be efficiently manipulated by means of a microwave excitation applied to the corresponding confining gate. The hole spin state can be read out and reinitialized through a Pauli blockade mechanism. The studied devices are derived from silicon nanowire field-effect transistors. We discuss their prospects for scalability and, more broadly, the potential advantages of FDSOI technology.

AB - We present recent progress towards the implementation of a scalable quantum processor based on fully-depleted silicon-on-insulator (FDSOI) technology. In particular, we discuss an approach where the elementary bits of quantum information - so-called qubits - are encoded in the spin degree of freedom of gate-confined holes in p-type devices. We show how a hole-spin can be efficiently manipulated by means of a microwave excitation applied to the corresponding confining gate. The hole spin state can be read out and reinitialized through a Pauli blockade mechanism. The studied devices are derived from silicon nanowire field-effect transistors. We discuss their prospects for scalability and, more broadly, the potential advantages of FDSOI technology.

U2 - 10.1109/iedm.2016.7838409

DO - 10.1109/iedm.2016.7838409

M3 - Conference article in proceedings

BT - 2016 IEEE International Electron Devices Meeting (IEDM)

PB - IEEE Institute of Electrical and Electronic Engineers

ER -

SOI technology for quantum information processing

Abstract

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