Direct bonding and mechanical thinning of pre-etched silicon wafers have been studied for the fabrication of SOI wafers with buried cavities. Under thinning of the cap wafer by grinding and polishing, the thin silicon diaphragm is bent and non-uniformity is observed. The result varies on the size of the cavity. By placing small supports in the cavities, the non-uniformity was greatly improved. As outcome, the presented method appears to be a viable process for many MEMS applications.
|Series||ECS Proceedings Volumes|
|Conference||8th International Symposium on Semiconductor Wafer Bonding: Science, Technology and Applications|
|Period||15/05/05 → 20/05/05|
- buried cavities
- direct bonding
- mechanical thinning