SOI wafers with buried cavities

Tommi Suni, Kimmo Henttinen, James Dekker, Hannu Luoto, Martin Kulawski, J. Mäkinen, R. Mutikainen

    Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

    1 Citation (Scopus)

    Abstract

    Direct bonding and mechanical thinning of pre-etched silicon wafers have been studied for the fabrication of SOI wafers with buried cavities. Under thinning of the cap wafer by grinding and polishing, the thin silicon diaphragm is bent and non-uniformity is observed. The result varies on the size of the cavity. By placing small supports in the cavities, the non-uniformity was greatly improved. As outcome, the presented method appears to be a viable process for many MEMS applications.
    Original languageEnglish
    Title of host publicationSemiconductor Wafer Bonding VIII: Science, Technology and Applications
    Subtitle of host publicationProceedings of the International Symposium
    PublisherElectrochemical Society ECS
    Pages216-225
    ISBN (Print)1-56677-460-8
    Publication statusPublished - 2005
    MoE publication typeA4 Article in a conference publication
    Event8th International Symposium on Semiconductor Wafer Bonding: Science, Technology and Applications: Part of the 2005 Spring Meeting of the Electrochemical Society - Quebec City, Canada
    Duration: 15 May 200520 May 2005

    Publication series

    SeriesECS Proceedings Volumes
    Volume2005-02

    Conference

    Conference8th International Symposium on Semiconductor Wafer Bonding: Science, Technology and Applications
    CountryCanada
    CityQuebec City
    Period15/05/0520/05/05

    Keywords

    • buried cavities
    • direct bonding
    • grinding
    • mechanical thinning
    • CMP
    • MEMS
    • SOI

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  • Cite this

    Suni, T., Henttinen, K., Dekker, J., Luoto, H., Kulawski, M., Mäkinen, J., & Mutikainen, R. (2005). SOI wafers with buried cavities. In Semiconductor Wafer Bonding VIII: Science, Technology and Applications: Proceedings of the International Symposium (pp. 216-225). Electrochemical Society ECS. ECS Proceedings Volumes, Vol.. 2005-02