SOI wafers with buried cavities

Tommi Suni; Kimmo Henttinen; James Dekker; Hannu Luoto; Martin Kulawski; J. Mäkinen; R. Mutikainen

SOI wafers with buried cavities

Tommi Suni, Kimmo Henttinen, James Dekker, Hannu Luoto, Martin Kulawski, J. Mäkinen, R. Mutikainen

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

1 Citation (Scopus)

Abstract

Direct bonding and mechanical thinning of pre-etched silicon wafers have been studied for the fabrication of SOI wafers with buried cavities. Under thinning of the cap wafer by grinding and polishing, the thin silicon diaphragm is bent and non-uniformity is observed. The result varies on the size of the cavity. By placing small supports in the cavities, the non-uniformity was greatly improved. As outcome, the presented method appears to be a viable process for many MEMS applications.

Original language	English
Title of host publication	Semiconductor Wafer Bonding VIII: Science, Technology and Applications
Subtitle of host publication	Proceedings of the International Symposium
Publisher	Electrochemical Society ECS
Pages	216-225
ISBN (Print)	1-56677-460-8
Publication status	Published - 2005
MoE publication type	A4 Article in a conference publication
Event	8th International Symposium on Semiconductor Wafer Bonding: Science, Technology and Applications: Part of the 2005 Spring Meeting of the Electrochemical Society - Quebec City, Canada Duration: 15 May 2005 → 20 May 2005

Publication series

Series	ECS Proceedings Volumes
Volume	2005-02

Conference

Conference	8th International Symposium on Semiconductor Wafer Bonding: Science, Technology and Applications
Country/Territory	Canada
City	Quebec City
Period	15/05/05 → 20/05/05

Keywords

buried cavities
direct bonding
grinding
mechanical thinning
CMP
MEMS
SOI

Cite this

@inproceedings{1150ce303b4244dd8906758a2c8283e1,

title = "SOI wafers with buried cavities",

abstract = "Direct bonding and mechanical thinning of pre-etched silicon wafers have been studied for the fabrication of SOI wafers with buried cavities. Under thinning of the cap wafer by grinding and polishing, the thin silicon diaphragm is bent and non-uniformity is observed. The result varies on the size of the cavity. By placing small supports in the cavities, the non-uniformity was greatly improved. As outcome, the presented method appears to be a viable process for many MEMS applications.",

keywords = "buried cavities, direct bonding, grinding, mechanical thinning, CMP, MEMS, SOI",

author = "Tommi Suni and Kimmo Henttinen and James Dekker and Hannu Luoto and Martin Kulawski and J. M{\"a}kinen and R. Mutikainen",

note = "Project code: T5SU00326; 8th International Symposium on Semiconductor Wafer Bonding: Science, Technology and Applications : Part of the 2005 Spring Meeting of the Electrochemical Society ; Conference date: 15-05-2005 Through 20-05-2005",

year = "2005",

language = "English",

isbn = "1-56677-460-8",

series = "ECS Proceedings Volumes",

publisher = "Electrochemical Society ECS",

pages = "216--225",

booktitle = "Semiconductor Wafer Bonding VIII: Science, Technology and Applications",

address = "United States",

}

Suni, T, Henttinen, K, Dekker, J, Luoto, H, Kulawski, M, Mäkinen, J & Mutikainen, R 2005, SOI wafers with buried cavities. in Semiconductor Wafer Bonding VIII: Science, Technology and Applications: Proceedings of the International Symposium. Electrochemical Society ECS, ECS Proceedings Volumes, vol. 2005-02, pp. 216-225, 8th International Symposium on Semiconductor Wafer Bonding: Science, Technology and Applications, Quebec City, Canada, 15/05/05.

SOI wafers with buried cavities. / Suni, Tommi; Henttinen, Kimmo; Dekker, James et al.
Semiconductor Wafer Bonding VIII: Science, Technology and Applications: Proceedings of the International Symposium. Electrochemical Society ECS, 2005. p. 216-225 (ECS Proceedings Volumes, Vol. 2005-02).

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

TY - GEN

T1 - SOI wafers with buried cavities

AU - Suni, Tommi

AU - Henttinen, Kimmo

AU - Dekker, James

AU - Luoto, Hannu

AU - Kulawski, Martin

AU - Mäkinen, J.

AU - Mutikainen, R.

N1 - Project code: T5SU00326

PY - 2005

Y1 - 2005

N2 - Direct bonding and mechanical thinning of pre-etched silicon wafers have been studied for the fabrication of SOI wafers with buried cavities. Under thinning of the cap wafer by grinding and polishing, the thin silicon diaphragm is bent and non-uniformity is observed. The result varies on the size of the cavity. By placing small supports in the cavities, the non-uniformity was greatly improved. As outcome, the presented method appears to be a viable process for many MEMS applications.

AB - Direct bonding and mechanical thinning of pre-etched silicon wafers have been studied for the fabrication of SOI wafers with buried cavities. Under thinning of the cap wafer by grinding and polishing, the thin silicon diaphragm is bent and non-uniformity is observed. The result varies on the size of the cavity. By placing small supports in the cavities, the non-uniformity was greatly improved. As outcome, the presented method appears to be a viable process for many MEMS applications.

KW - buried cavities

KW - direct bonding

KW - grinding

KW - mechanical thinning

KW - CMP

KW - MEMS

KW - SOI

M3 - Conference article in proceedings

SN - 1-56677-460-8

T3 - ECS Proceedings Volumes

SP - 216

EP - 225

BT - Semiconductor Wafer Bonding VIII: Science, Technology and Applications

PB - Electrochemical Society ECS

T2 - 8th International Symposium on Semiconductor Wafer Bonding: Science, Technology and Applications

Y2 - 15 May 2005 through 20 May 2005

ER -

SOI wafers with buried cavities

Abstract

Publication series

Conference

Keywords

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