Solid-State Memcapacitive Device Based on Memristive Switch

Jacek Flak; E. Lehtonen; M. Laiho; Arto Rantala; Mika Prunnila; Tomi Haatainen

doi:10.1088/0268-1242/29/10/104012

Solid-State Memcapacitive Device Based on Memristive Switch

Jacek Flak (Corresponding Author), E. Lehtonen, M. Laiho, Arto Rantala, Mika Prunnila, Tomi Haatainen

Research output: Contribution to journal › Article › Scientific › peer-review

5 Citations (Scopus)

Abstract

This article describes the implementation of a solid-state memcapacitor based on combination of a memristor and traditional metal-insulator-metal capacitor. A device with an area of 5µm * 5µm has been fabricated and tested. The structure has been simulated and analyzed using circuit equivalents with parameters obtained from measurements. The memristor is represented by a sinh(·)-type model. The performance of the memcapacitor is discussed, and some methods to improve it are proposed.

Original language	English
Number of pages	7
Journal	Semiconductor Science and Technology
Volume	29
Issue number	10
DOIs	https://doi.org/10.1088/0268-1242/29/10/104012
Publication status	Published - 2014
MoE publication type	A1 Journal article-refereed

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Keywords

solid-state devices
memcapacitors
memristors

Cite this

Flak, J., Lehtonen, E., Laiho, M., Rantala, A., Prunnila, M., & Haatainen, T. (2014). Solid-State Memcapacitive Device Based on Memristive Switch. Semiconductor Science and Technology, 29(10). https://doi.org/10.1088/0268-1242/29/10/104012

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AB - This article describes the implementation of a solid-state memcapacitor based on combination of a memristor and traditional metal-insulator-metal capacitor. A device with an area of 5µm * 5µm has been fabricated and tested. The structure has been simulated and analyzed using circuit equivalents with parameters obtained from measurements. The memristor is represented by a sinh(·)-type model. The performance of the memcapacitor is discussed, and some methods to improve it are proposed.

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10.1088/0268-1242/29/10/104012