Solid-State Memcapacitive Device Based on Memristive Switch

Jacek Flak; E. Lehtonen; M. Laiho; Arto Rantala; Mika Prunnila; Tomi Haatainen

doi:10.1088/0268-1242/29/10/104012

Solid-State Memcapacitive Device Based on Memristive Switch

Jacek Flak (Corresponding Author), E. Lehtonen, M. Laiho, Arto Rantala, Mika Prunnila, Tomi Haatainen

Research output: Contribution to journal › Article › Scientific › peer-review

6 Citations (Scopus)

Abstract

This article describes the implementation of a solid-state memcapacitor based on combination of a memristor and traditional metal-insulator-metal capacitor. A device with an area of 5µm * 5µm has been fabricated and tested. The structure has been simulated and analyzed using circuit equivalents with parameters obtained from measurements. The memristor is represented by a sinh(·)-type model. The performance of the memcapacitor is discussed, and some methods to improve it are proposed.

Original language	English
Number of pages	7
Journal	Semiconductor Science and Technology
Volume	29
Issue number	10
DOIs	https://doi.org/10.1088/0268-1242/29/10/104012
Publication status	Published - 2014
MoE publication type	A1 Journal article-refereed

Keywords

solid-state devices
memcapacitors
memristors

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@article{0f78ddecbe5a442c933411e2119ae581,

title = "Solid-State Memcapacitive Device Based on Memristive Switch",

abstract = "This article describes the implementation of a solid-state memcapacitor based on combination of a memristor and traditional metal-insulator-metal capacitor. A device with an area of 5µm * 5µm has been fabricated and tested. The structure has been simulated and analyzed using circuit equivalents with parameters obtained from measurements. The memristor is represented by a sinh(·)-type model. The performance of the memcapacitor is discussed, and some methods to improve it are proposed.",

keywords = "solid-state devices, memcapacitors, memristors",

author = "Jacek Flak and E. Lehtonen and M. Laiho and Arto Rantala and Mika Prunnila and Tomi Haatainen",

note = "Project code: 70824",

year = "2014",

doi = "10.1088/0268-1242/29/10/104012",

language = "English",

volume = "29",

journal = "Semiconductor Science and Technology",

issn = "0268-1242",

publisher = "Institute of Physics IOP",

number = "10",

}

TY - JOUR

T1 - Solid-State Memcapacitive Device Based on Memristive Switch

AU - Flak, Jacek

AU - Lehtonen, E.

AU - Laiho, M.

AU - Rantala, Arto

AU - Prunnila, Mika

AU - Haatainen, Tomi

N1 - Project code: 70824

PY - 2014

Y1 - 2014

N2 - This article describes the implementation of a solid-state memcapacitor based on combination of a memristor and traditional metal-insulator-metal capacitor. A device with an area of 5µm * 5µm has been fabricated and tested. The structure has been simulated and analyzed using circuit equivalents with parameters obtained from measurements. The memristor is represented by a sinh(·)-type model. The performance of the memcapacitor is discussed, and some methods to improve it are proposed.

AB - This article describes the implementation of a solid-state memcapacitor based on combination of a memristor and traditional metal-insulator-metal capacitor. A device with an area of 5µm * 5µm has been fabricated and tested. The structure has been simulated and analyzed using circuit equivalents with parameters obtained from measurements. The memristor is represented by a sinh(·)-type model. The performance of the memcapacitor is discussed, and some methods to improve it are proposed.

KW - solid-state devices

KW - memcapacitors

KW - memristors

U2 - 10.1088/0268-1242/29/10/104012

DO - 10.1088/0268-1242/29/10/104012

M3 - Article

VL - 29

JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

SN - 0268-1242

IS - 10

ER -