Solid-State Memcapacitive Device Based on Memristive Switch

Jacek Flak (Corresponding Author), E. Lehtonen, M. Laiho, Arto Rantala, Mika Prunnila, Tomi Haatainen

    Research output: Contribution to journalArticleScientificpeer-review

    5 Citations (Scopus)

    Abstract

    This article describes the implementation of a solid-state memcapacitor based on combination of a memristor and traditional metal-insulator-metal capacitor. A device with an area of 5µm * 5µm has been fabricated and tested. The structure has been simulated and analyzed using circuit equivalents with parameters obtained from measurements. The memristor is represented by a sinh(·)-type model. The performance of the memcapacitor is discussed, and some methods to improve it are proposed.
    Original languageEnglish
    Number of pages7
    JournalSemiconductor Science and Technology
    Volume29
    Issue number10
    DOIs
    Publication statusPublished - 2014
    MoE publication typeA1 Journal article-refereed

    Fingerprint

    Memristors
    Solid state devices
    solid state devices
    switches
    Metals
    Switches
    equivalent circuits
    Equivalent circuits
    metals
    capacitors
    Capacitors
    insulators
    solid state

    Keywords

    • solid-state devices
    • memcapacitors
    • memristors

    Cite this

    @article{0f78ddecbe5a442c933411e2119ae581,
    title = "Solid-State Memcapacitive Device Based on Memristive Switch",
    abstract = "This article describes the implementation of a solid-state memcapacitor based on combination of a memristor and traditional metal-insulator-metal capacitor. A device with an area of 5µm * 5µm has been fabricated and tested. The structure has been simulated and analyzed using circuit equivalents with parameters obtained from measurements. The memristor is represented by a sinh(·)-type model. The performance of the memcapacitor is discussed, and some methods to improve it are proposed.",
    keywords = "solid-state devices, memcapacitors, memristors",
    author = "Jacek Flak and E. Lehtonen and M. Laiho and Arto Rantala and Mika Prunnila and Tomi Haatainen",
    note = "Project code: 70824",
    year = "2014",
    doi = "10.1088/0268-1242/29/10/104012",
    language = "English",
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    journal = "Semiconductor Science and Technology",
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    publisher = "Institute of Physics IOP",
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    Solid-State Memcapacitive Device Based on Memristive Switch. / Flak, Jacek (Corresponding Author); Lehtonen, E.; Laiho, M.; Rantala, Arto; Prunnila, Mika; Haatainen, Tomi.

    In: Semiconductor Science and Technology, Vol. 29, No. 10, 2014.

    Research output: Contribution to journalArticleScientificpeer-review

    TY - JOUR

    T1 - Solid-State Memcapacitive Device Based on Memristive Switch

    AU - Flak, Jacek

    AU - Lehtonen, E.

    AU - Laiho, M.

    AU - Rantala, Arto

    AU - Prunnila, Mika

    AU - Haatainen, Tomi

    N1 - Project code: 70824

    PY - 2014

    Y1 - 2014

    N2 - This article describes the implementation of a solid-state memcapacitor based on combination of a memristor and traditional metal-insulator-metal capacitor. A device with an area of 5µm * 5µm has been fabricated and tested. The structure has been simulated and analyzed using circuit equivalents with parameters obtained from measurements. The memristor is represented by a sinh(·)-type model. The performance of the memcapacitor is discussed, and some methods to improve it are proposed.

    AB - This article describes the implementation of a solid-state memcapacitor based on combination of a memristor and traditional metal-insulator-metal capacitor. A device with an area of 5µm * 5µm has been fabricated and tested. The structure has been simulated and analyzed using circuit equivalents with parameters obtained from measurements. The memristor is represented by a sinh(·)-type model. The performance of the memcapacitor is discussed, and some methods to improve it are proposed.

    KW - solid-state devices

    KW - memcapacitors

    KW - memristors

    U2 - 10.1088/0268-1242/29/10/104012

    DO - 10.1088/0268-1242/29/10/104012

    M3 - Article

    VL - 29

    JO - Semiconductor Science and Technology

    JF - Semiconductor Science and Technology

    SN - 0268-1242

    IS - 10

    ER -