Abstract
This article describes the implementation of a solid-state memcapacitor based on combination of a memristor and traditional metal-insulator-metal capacitor. A device with an area of 5µm * 5µm has been fabricated and tested. The structure has been simulated and analyzed using circuit equivalents with parameters obtained from measurements. The memristor is represented by a sinh(·)-type model. The performance of the memcapacitor is discussed, and some methods to improve it are proposed.
Original language | English |
---|---|
Number of pages | 7 |
Journal | Semiconductor Science and Technology |
Volume | 29 |
Issue number | 10 |
DOIs | |
Publication status | Published - 2014 |
MoE publication type | A1 Journal article-refereed |
Keywords
- solid-state devices
- memcapacitors
- memristors