Abstract
This article describes the implementation of a solid-state memcapacitor based on combination of a memristor and traditional metal-insulator-metal capacitor. A device with an area of 5µm * 5µm has been fabricated and tested. The structure has been simulated and analyzed using circuit equivalents with parameters obtained from measurements. The memristor is represented by a sinh(·)-type model. The performance of the memcapacitor is discussed, and some methods to improve it are proposed.
| Original language | English |
|---|---|
| Number of pages | 7 |
| Journal | Semiconductor Science and Technology |
| Volume | 29 |
| Issue number | 10 |
| DOIs | |
| Publication status | Published - 2014 |
| MoE publication type | A1 Journal article-refereed |
Keywords
- solid-state devices
- memcapacitors
- memristors