Abstract
This chapter introduces the concept of a memcapacitor,
and reviews different approaches to its physical
realization. Also, practical constraints for their usage
are assessed. Because of their compatibility with
traditional circuit integration technologies, two
approaches are particularly interesting: the
ferroelectric capacitor and the memcapacitor constructed
by appending metal-insulator-metal (MIM) capacitor with a
memristive switching layer. Ferroelectric capacitors have
already been in use for many years so the properties of
this technology are relatively well researched. The
MIM-memristor hybrid structure can take advantage of the
vital research on memristive memories. With sufficiently
large ratio of the OFF and ON resistances of a memristive
material, the compound structure behaves as a
memcapacitive system. Finally, the potential of
memcapacitors for memory and logic applications as well
as for artificial neural networks are discussed
| Original language | English |
|---|---|
| Title of host publication | Memristor Networks |
| Editors | Andrew Adamatzky, Leon Chua |
| Place of Publication | Cham |
| Publisher | Springer |
| Pages | 585-601 |
| ISBN (Electronic) | 978-3-319-02630-5 |
| ISBN (Print) | 978-3-319-02629-9, 978-3-319-35231-2 |
| DOIs | |
| Publication status | Published - 2014 |
| MoE publication type | D2 Article in professional manuals or guides or professional information systems or text book material |