Abstract
This chapter introduces the concept of a memcapacitor, and reviews different approaches to its physical realization. Also, practical constraints for their usage are assessed. Because of their compatibility with traditional circuit integration technologies, two approaches are particularly interesting: the ferroelectric capacitor and the memcapacitor constructed by appending metal-insulator-metal (MIM) capacitor with a memristive switching layer. Ferroelectric capacitors have already been in use for many years so the properties of this technology are relatively well researched. The MIM-memristor hybrid structure can take advantage of the vital research on memristive memories. With sufficiently large ratio of the OFF and ON resistances of a memristive material, the compound structure behaves as a memcapacitive system. Finally, the potential of memcapacitors for memory and logic applications as well as for artificial neural networks are discussed.
Original language | English |
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Title of host publication | Handbook of Memristor Networks |
Publisher | Springer |
Pages | 1211-1228 |
Number of pages | 18 |
ISBN (Electronic) | 978-3-319-76375-0 |
ISBN (Print) | 978-3-319-76374-3 |
DOIs | |
Publication status | Published - Jan 2019 |
MoE publication type | A3 Part of a book or another research book |