Some properties of CrxV1−xSi2 and CrxMo1−xSi2 thin films

O. Thomas, S. Molis, Francois D'Heurle, T. Finstad, Leif Grönberg, Ilkka Suni, B. Svensson, J. Svensson

Research output: Contribution to journalArticleScientificpeer-review

3 Citations (Scopus)

Abstract

CrSi2 which crystallizes in the hexagonal C40 structure type is reported to be a semiconductor with a bandgap of about 0.35 eV. On the other hand, VSi2 with one electron less but with the same crystal structure exhibits a metallic conductivity. MoSi2, also with the same structure (below about 650°C), and the same electronic configuration as CrSi2 is a compensated metal. In order to investigate the transition from one type of behaviour to the others we have prepared CrxV1−x and CrxMo1−x alloys deposited by coevaporation of the metals on Si wafers. All the layers which have been treated at 650°C exhibit only one type of diffraction peaks corresponding to a hexagonal C40 solid solution. Hall effect and resistivity measurements indicate that the addition of VSi2 to CrSi2 rapidly increases the hole concentration with a clear metallic behaviour at 25 mol% VSi2. Addition of MoSi2 produces more gradual changes. Infrared absorption spectra exhibit a clear cutoff around 0.4–0.5 eV depending on the alloy composition.
Original languageEnglish
Pages (from-to)94-105
JournalApplied Surface Science
Volume38
Issue number1-4
DOIs
Publication statusPublished - 1989
MoE publication typeA1 Journal article-refereed

Fingerprint

Metals
Hole concentration
Thin films
Hall effect
Infrared absorption
Absorption spectra
Solid solutions
Energy gap
Diffraction
Crystal structure
Semiconductor materials
Electrons
Chemical analysis

Cite this

Thomas, O., Molis, S., D'Heurle, F., Finstad, T., Grönberg, L., Suni, I., ... Svensson, J. (1989). Some properties of CrxV1−xSi2 and CrxMo1−xSi2 thin films. Applied Surface Science, 38(1-4), 94-105. https://doi.org/10.1016/0169-4332(89)90524-2
Thomas, O. ; Molis, S. ; D'Heurle, Francois ; Finstad, T. ; Grönberg, Leif ; Suni, Ilkka ; Svensson, B. ; Svensson, J. / Some properties of CrxV1−xSi2 and CrxMo1−xSi2 thin films. In: Applied Surface Science. 1989 ; Vol. 38, No. 1-4. pp. 94-105.
@article{89bae0b0fa6a4afdb5e94b0eafe446b1,
title = "Some properties of CrxV1−xSi2 and CrxMo1−xSi2 thin films",
abstract = "CrSi2 which crystallizes in the hexagonal C40 structure type is reported to be a semiconductor with a bandgap of about 0.35 eV. On the other hand, VSi2 with one electron less but with the same crystal structure exhibits a metallic conductivity. MoSi2, also with the same structure (below about 650°C), and the same electronic configuration as CrSi2 is a compensated metal. In order to investigate the transition from one type of behaviour to the others we have prepared CrxV1−x and CrxMo1−x alloys deposited by coevaporation of the metals on Si wafers. All the layers which have been treated at 650°C exhibit only one type of diffraction peaks corresponding to a hexagonal C40 solid solution. Hall effect and resistivity measurements indicate that the addition of VSi2 to CrSi2 rapidly increases the hole concentration with a clear metallic behaviour at 25 mol{\%} VSi2. Addition of MoSi2 produces more gradual changes. Infrared absorption spectra exhibit a clear cutoff around 0.4–0.5 eV depending on the alloy composition.",
author = "O. Thomas and S. Molis and Francois D'Heurle and T. Finstad and Leif Gr{\"o}nberg and Ilkka Suni and B. Svensson and J. Svensson",
year = "1989",
doi = "10.1016/0169-4332(89)90524-2",
language = "English",
volume = "38",
pages = "94--105",
journal = "Applied Surface Science",
issn = "0169-4332",
publisher = "Elsevier",
number = "1-4",

}

Thomas, O, Molis, S, D'Heurle, F, Finstad, T, Grönberg, L, Suni, I, Svensson, B & Svensson, J 1989, 'Some properties of CrxV1−xSi2 and CrxMo1−xSi2 thin films', Applied Surface Science, vol. 38, no. 1-4, pp. 94-105. https://doi.org/10.1016/0169-4332(89)90524-2

Some properties of CrxV1−xSi2 and CrxMo1−xSi2 thin films. / Thomas, O.; Molis, S.; D'Heurle, Francois; Finstad, T.; Grönberg, Leif; Suni, Ilkka; Svensson, B.; Svensson, J.

In: Applied Surface Science, Vol. 38, No. 1-4, 1989, p. 94-105.

Research output: Contribution to journalArticleScientificpeer-review

TY - JOUR

T1 - Some properties of CrxV1−xSi2 and CrxMo1−xSi2 thin films

AU - Thomas, O.

AU - Molis, S.

AU - D'Heurle, Francois

AU - Finstad, T.

AU - Grönberg, Leif

AU - Suni, Ilkka

AU - Svensson, B.

AU - Svensson, J.

PY - 1989

Y1 - 1989

N2 - CrSi2 which crystallizes in the hexagonal C40 structure type is reported to be a semiconductor with a bandgap of about 0.35 eV. On the other hand, VSi2 with one electron less but with the same crystal structure exhibits a metallic conductivity. MoSi2, also with the same structure (below about 650°C), and the same electronic configuration as CrSi2 is a compensated metal. In order to investigate the transition from one type of behaviour to the others we have prepared CrxV1−x and CrxMo1−x alloys deposited by coevaporation of the metals on Si wafers. All the layers which have been treated at 650°C exhibit only one type of diffraction peaks corresponding to a hexagonal C40 solid solution. Hall effect and resistivity measurements indicate that the addition of VSi2 to CrSi2 rapidly increases the hole concentration with a clear metallic behaviour at 25 mol% VSi2. Addition of MoSi2 produces more gradual changes. Infrared absorption spectra exhibit a clear cutoff around 0.4–0.5 eV depending on the alloy composition.

AB - CrSi2 which crystallizes in the hexagonal C40 structure type is reported to be a semiconductor with a bandgap of about 0.35 eV. On the other hand, VSi2 with one electron less but with the same crystal structure exhibits a metallic conductivity. MoSi2, also with the same structure (below about 650°C), and the same electronic configuration as CrSi2 is a compensated metal. In order to investigate the transition from one type of behaviour to the others we have prepared CrxV1−x and CrxMo1−x alloys deposited by coevaporation of the metals on Si wafers. All the layers which have been treated at 650°C exhibit only one type of diffraction peaks corresponding to a hexagonal C40 solid solution. Hall effect and resistivity measurements indicate that the addition of VSi2 to CrSi2 rapidly increases the hole concentration with a clear metallic behaviour at 25 mol% VSi2. Addition of MoSi2 produces more gradual changes. Infrared absorption spectra exhibit a clear cutoff around 0.4–0.5 eV depending on the alloy composition.

U2 - 10.1016/0169-4332(89)90524-2

DO - 10.1016/0169-4332(89)90524-2

M3 - Article

VL - 38

SP - 94

EP - 105

JO - Applied Surface Science

JF - Applied Surface Science

SN - 0169-4332

IS - 1-4

ER -