Some properties of CrxV1−xSi2 and CrxMo1−xSi2 thin films

O. Thomas, S. Molis, Francois D'Heurle, T. Finstad, Leif Grönberg, Ilkka Suni, B. Svensson, J. Svensson

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    Abstract

    CrSi2 which crystallizes in the hexagonal C40 structure type is reported to be a semiconductor with a bandgap of about 0.35 eV. On the other hand, VSi2 with one electron less but with the same crystal structure exhibits a metallic conductivity. MoSi2, also with the same structure (below about 650°C), and the same electronic configuration as CrSi2 is a compensated metal. In order to investigate the transition from one type of behaviour to the others we have prepared CrxV1−x and CrxMo1−x alloys deposited by coevaporation of the metals on Si wafers. All the layers which have been treated at 650°C exhibit only one type of diffraction peaks corresponding to a hexagonal C40 solid solution. Hall effect and resistivity measurements indicate that the addition of VSi2 to CrSi2 rapidly increases the hole concentration with a clear metallic behaviour at 25 mol% VSi2. Addition of MoSi2 produces more gradual changes. Infrared absorption spectra exhibit a clear cutoff around 0.4–0.5 eV depending on the alloy composition.
    Original languageEnglish
    Pages (from-to)94-105
    JournalApplied Surface Science
    Volume38
    Issue number1-4
    DOIs
    Publication statusPublished - 1989
    MoE publication typeA1 Journal article-refereed

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    Thomas, O., Molis, S., D'Heurle, F., Finstad, T., Grönberg, L., Suni, I., Svensson, B., & Svensson, J. (1989). Some properties of CrxV1−xSi2 and CrxMo1−xSi2 thin films. Applied Surface Science, 38(1-4), 94-105. https://doi.org/10.1016/0169-4332(89)90524-2