Some properties of ReSi2

Christos Krontiras, Leif Grönberg, Ilkka Suni, Francois D'Heurle, Jerry Tersoff, Ingvar Engström, Bengt Karlsson, Petersson

Research output: Contribution to journalArticleScientificpeer-review

14 Citations (Scopus)

Abstract

Thin films of ReSi2 were prepared by the co-evaporation of rhenium and silicon. The structure of the films is compared with the previously reported structure of this compound.
The resistivity and Hall coefficient of the films were measured from 4.2 K to 523 K. Optical transmission measurements were also carried out. The films display semiconducting properties (p-type) characteristic of a small band gap, in agreement with measurements reported for bulk and single-crystal samples.
The discrepancy between these results and recent band calculations, indicating a potentially high conductivity, is briefly discussed.
Original languageEnglish
Pages (from-to)197-206
JournalThin Solid Films
Volume161
DOIs
Publication statusPublished - 1988
MoE publication typeA1 Journal article-refereed

Fingerprint

Rhenium
rhenium
Silicon
Light transmission
Hall effect
Evaporation
Energy gap
evaporation
Single crystals
Thin films
conductivity
electrical resistivity
single crystals
silicon
coefficients
thin films

Cite this

Krontiras, C., Grönberg, L., Suni, I., D'Heurle, F., Tersoff, J., Engström, I., ... Petersson (1988). Some properties of ReSi2. Thin Solid Films, 161, 197-206. https://doi.org/10.1016/0040-6090(88)90251-9
Krontiras, Christos ; Grönberg, Leif ; Suni, Ilkka ; D'Heurle, Francois ; Tersoff, Jerry ; Engström, Ingvar ; Karlsson, Bengt ; Petersson. / Some properties of ReSi2. In: Thin Solid Films. 1988 ; Vol. 161. pp. 197-206.
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abstract = "Thin films of ReSi2 were prepared by the co-evaporation of rhenium and silicon. The structure of the films is compared with the previously reported structure of this compound. The resistivity and Hall coefficient of the films were measured from 4.2 K to 523 K. Optical transmission measurements were also carried out. The films display semiconducting properties (p-type) characteristic of a small band gap, in agreement with measurements reported for bulk and single-crystal samples. The discrepancy between these results and recent band calculations, indicating a potentially high conductivity, is briefly discussed.",
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Krontiras, C, Grönberg, L, Suni, I, D'Heurle, F, Tersoff, J, Engström, I, Karlsson, B & Petersson 1988, 'Some properties of ReSi2', Thin Solid Films, vol. 161, pp. 197-206. https://doi.org/10.1016/0040-6090(88)90251-9

Some properties of ReSi2. / Krontiras, Christos; Grönberg, Leif; Suni, Ilkka; D'Heurle, Francois; Tersoff, Jerry; Engström, Ingvar; Karlsson, Bengt; Petersson.

In: Thin Solid Films, Vol. 161, 1988, p. 197-206.

Research output: Contribution to journalArticleScientificpeer-review

TY - JOUR

T1 - Some properties of ReSi2

AU - Krontiras, Christos

AU - Grönberg, Leif

AU - Suni, Ilkka

AU - D'Heurle, Francois

AU - Tersoff, Jerry

AU - Engström, Ingvar

AU - Karlsson, Bengt

AU - Petersson, null

PY - 1988

Y1 - 1988

N2 - Thin films of ReSi2 were prepared by the co-evaporation of rhenium and silicon. The structure of the films is compared with the previously reported structure of this compound. The resistivity and Hall coefficient of the films were measured from 4.2 K to 523 K. Optical transmission measurements were also carried out. The films display semiconducting properties (p-type) characteristic of a small band gap, in agreement with measurements reported for bulk and single-crystal samples. The discrepancy between these results and recent band calculations, indicating a potentially high conductivity, is briefly discussed.

AB - Thin films of ReSi2 were prepared by the co-evaporation of rhenium and silicon. The structure of the films is compared with the previously reported structure of this compound. The resistivity and Hall coefficient of the films were measured from 4.2 K to 523 K. Optical transmission measurements were also carried out. The films display semiconducting properties (p-type) characteristic of a small band gap, in agreement with measurements reported for bulk and single-crystal samples. The discrepancy between these results and recent band calculations, indicating a potentially high conductivity, is briefly discussed.

U2 - 10.1016/0040-6090(88)90251-9

DO - 10.1016/0040-6090(88)90251-9

M3 - Article

VL - 161

SP - 197

EP - 206

JO - Thin Solid Films

JF - Thin Solid Films

SN - 0040-6090

ER -

Krontiras C, Grönberg L, Suni I, D'Heurle F, Tersoff J, Engström I et al. Some properties of ReSi2. Thin Solid Films. 1988;161:197-206. https://doi.org/10.1016/0040-6090(88)90251-9