Some properties of ReSi2

Christos Krontiras, Leif Grönberg, Ilkka Suni, Francois D'Heurle, Jerry Tersoff, Ingvar Engström, Bengt Karlsson, Petersson

    Research output: Contribution to journalArticleScientificpeer-review

    14 Citations (Scopus)

    Abstract

    Thin films of ReSi2 were prepared by the co-evaporation of rhenium and silicon. The structure of the films is compared with the previously reported structure of this compound.
    The resistivity and Hall coefficient of the films were measured from 4.2 K to 523 K. Optical transmission measurements were also carried out. The films display semiconducting properties (p-type) characteristic of a small band gap, in agreement with measurements reported for bulk and single-crystal samples.
    The discrepancy between these results and recent band calculations, indicating a potentially high conductivity, is briefly discussed.
    Original languageEnglish
    Pages (from-to)197-206
    JournalThin Solid Films
    Volume161
    DOIs
    Publication statusPublished - 1988
    MoE publication typeA1 Journal article-refereed

    Fingerprint

    Rhenium
    rhenium
    Silicon
    Light transmission
    Hall effect
    Evaporation
    Energy gap
    evaporation
    Single crystals
    Thin films
    conductivity
    electrical resistivity
    single crystals
    silicon
    coefficients
    thin films

    Cite this

    Krontiras, C., Grönberg, L., Suni, I., D'Heurle, F., Tersoff, J., Engström, I., ... Petersson (1988). Some properties of ReSi2. Thin Solid Films, 161, 197-206. https://doi.org/10.1016/0040-6090(88)90251-9
    Krontiras, Christos ; Grönberg, Leif ; Suni, Ilkka ; D'Heurle, Francois ; Tersoff, Jerry ; Engström, Ingvar ; Karlsson, Bengt ; Petersson. / Some properties of ReSi2. In: Thin Solid Films. 1988 ; Vol. 161. pp. 197-206.
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    abstract = "Thin films of ReSi2 were prepared by the co-evaporation of rhenium and silicon. The structure of the films is compared with the previously reported structure of this compound. The resistivity and Hall coefficient of the films were measured from 4.2 K to 523 K. Optical transmission measurements were also carried out. The films display semiconducting properties (p-type) characteristic of a small band gap, in agreement with measurements reported for bulk and single-crystal samples. The discrepancy between these results and recent band calculations, indicating a potentially high conductivity, is briefly discussed.",
    author = "Christos Krontiras and Leif Gr{\"o}nberg and Ilkka Suni and Francois D'Heurle and Jerry Tersoff and Ingvar Engstr{\"o}m and Bengt Karlsson and Petersson",
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    doi = "10.1016/0040-6090(88)90251-9",
    language = "English",
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    pages = "197--206",
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    Krontiras, C, Grönberg, L, Suni, I, D'Heurle, F, Tersoff, J, Engström, I, Karlsson, B & Petersson 1988, 'Some properties of ReSi2', Thin Solid Films, vol. 161, pp. 197-206. https://doi.org/10.1016/0040-6090(88)90251-9

    Some properties of ReSi2. / Krontiras, Christos; Grönberg, Leif; Suni, Ilkka; D'Heurle, Francois; Tersoff, Jerry; Engström, Ingvar; Karlsson, Bengt; Petersson.

    In: Thin Solid Films, Vol. 161, 1988, p. 197-206.

    Research output: Contribution to journalArticleScientificpeer-review

    TY - JOUR

    T1 - Some properties of ReSi2

    AU - Krontiras, Christos

    AU - Grönberg, Leif

    AU - Suni, Ilkka

    AU - D'Heurle, Francois

    AU - Tersoff, Jerry

    AU - Engström, Ingvar

    AU - Karlsson, Bengt

    AU - Petersson, null

    PY - 1988

    Y1 - 1988

    N2 - Thin films of ReSi2 were prepared by the co-evaporation of rhenium and silicon. The structure of the films is compared with the previously reported structure of this compound. The resistivity and Hall coefficient of the films were measured from 4.2 K to 523 K. Optical transmission measurements were also carried out. The films display semiconducting properties (p-type) characteristic of a small band gap, in agreement with measurements reported for bulk and single-crystal samples. The discrepancy between these results and recent band calculations, indicating a potentially high conductivity, is briefly discussed.

    AB - Thin films of ReSi2 were prepared by the co-evaporation of rhenium and silicon. The structure of the films is compared with the previously reported structure of this compound. The resistivity and Hall coefficient of the films were measured from 4.2 K to 523 K. Optical transmission measurements were also carried out. The films display semiconducting properties (p-type) characteristic of a small band gap, in agreement with measurements reported for bulk and single-crystal samples. The discrepancy between these results and recent band calculations, indicating a potentially high conductivity, is briefly discussed.

    U2 - 10.1016/0040-6090(88)90251-9

    DO - 10.1016/0040-6090(88)90251-9

    M3 - Article

    VL - 161

    SP - 197

    EP - 206

    JO - Thin Solid Films

    JF - Thin Solid Films

    SN - 0040-6090

    ER -

    Krontiras C, Grönberg L, Suni I, D'Heurle F, Tersoff J, Engström I et al. Some properties of ReSi2. Thin Solid Films. 1988;161:197-206. https://doi.org/10.1016/0040-6090(88)90251-9