Some properties of ReSi2

Christos Krontiras; Leif Grönberg; Ilkka Suni; Francois d'Heurle; Jerry Tersoff; Ingvar Engström; Bengt Karlsson; C.S. Petersson

doi:10.1016/0040-6090(88)90251-9

Some properties of ReSi₂

Christos Krontiras
, Leif Grönberg
, Ilkka Suni
, Francois d'Heurle
, Jerry Tersoff
, Ingvar Engström
, Bengt Karlsson
, C.S. Petersson

Uppsala University
Vattenfall AB
KTH Royal Institute of Technology
IBM Research – Thomas J. Watson Research Center

Research output: Contribution to journal › Article › Scientific › peer-review

15 Citations (Scopus)

Abstract

Thin films of ReSi₂ were prepared by the co-evaporation of rhenium and silicon. The structure of the films is compared with the previously reported structure of this compound. The resistivity and Hall coefficient of the films were measured from 4.2 K to 523 K. Optical transmission measurements were also carried out. The films display semiconducting properties (p-type) characteristic of a small band gap, in agreement with measurements reported for bulk and single-crystal samples.
The discrepancy between these results and recent band calculations, indicating a potentially high conductivity, is briefly discussed.

Original language	English
Pages (from-to)	197-206
Journal	Thin Solid Films
Volume	161
DOIs	https://doi.org/10.1016/0040-6090(88)90251-9
Publication status	Published - 1988
MoE publication type	A1 Journal article-refereed

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10.1016/0040-6090(88)90251-9

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title = "Some properties of ReSi2",

abstract = "Thin films of ReSi2 were prepared by the co-evaporation of rhenium and silicon. The structure of the films is compared with the previously reported structure of this compound. The resistivity and Hall coefficient of the films were measured from 4.2 K to 523 K. Optical transmission measurements were also carried out. The films display semiconducting properties (p-type) characteristic of a small band gap, in agreement with measurements reported for bulk and single-crystal samples. The discrepancy between these results and recent band calculations, indicating a potentially high conductivity, is briefly discussed.",

author = "Christos Krontiras and Leif Gr{\"o}nberg and Ilkka Suni and Francois d'Heurle and Jerry Tersoff and Ingvar Engstr{\"o}m and Bengt Karlsson and C.S. Petersson",

year = "1988",

doi = "10.1016/0040-6090(88)90251-9",

language = "English",

volume = "161",

pages = "197--206",

journal = "Thin Solid Films",

issn = "0040-6090",

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T1 - Some properties of ReSi2

AU - Krontiras, Christos

AU - Grönberg, Leif

AU - Suni, Ilkka

AU - d'Heurle, Francois

AU - Tersoff, Jerry

AU - Engström, Ingvar

AU - Karlsson, Bengt

AU - Petersson, C.S.

PY - 1988

Y1 - 1988

N2 - Thin films of ReSi2 were prepared by the co-evaporation of rhenium and silicon. The structure of the films is compared with the previously reported structure of this compound. The resistivity and Hall coefficient of the films were measured from 4.2 K to 523 K. Optical transmission measurements were also carried out. The films display semiconducting properties (p-type) characteristic of a small band gap, in agreement with measurements reported for bulk and single-crystal samples. The discrepancy between these results and recent band calculations, indicating a potentially high conductivity, is briefly discussed.

AB - Thin films of ReSi2 were prepared by the co-evaporation of rhenium and silicon. The structure of the films is compared with the previously reported structure of this compound. The resistivity and Hall coefficient of the films were measured from 4.2 K to 523 K. Optical transmission measurements were also carried out. The films display semiconducting properties (p-type) characteristic of a small band gap, in agreement with measurements reported for bulk and single-crystal samples. The discrepancy between these results and recent band calculations, indicating a potentially high conductivity, is briefly discussed.

U2 - 10.1016/0040-6090(88)90251-9

DO - 10.1016/0040-6090(88)90251-9

M3 - Article

SN - 0040-6090

VL - 161

SP - 197

EP - 206

JO - Thin Solid Films

JF - Thin Solid Films

ER -

Some properties of ReSi2

Abstract

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Some properties of ReSi₂