Spin-dependent transport in heavily Mn-doped GaAs

Pekka Kuivalainen (Corresponding Author)

Research output: Contribution to journalArticleScientificpeer-review

15 Citations (Scopus)

Abstract

The theory of magnetotransport in heavily Mn‐doped GaAs, a p‐type ferromagnetic semiconductor, is developed in the weak coupling limit by calculating the temperature and magnetic field dependences of the spin disorder scattering‐limited hole mobility. The theory is based on the exchange interaction between the itinerant holes and the localized 3d spins of the Mn ions, and it is developed by using Zubarev's double‐time Green's functions. The relaxation time of the charge carriers is calculated from the imaginary part of the self‐energy appearing in the derived hole propagator. Adding a contribution from impurity scattering the total hole mobility is estimated. Comparison to the experimental resistivity data shows that a good agreement with the measured results is obtained only if the short‐range order and the consequent T dependence of the critical scattering are taken into account in the paramagnetic region. The measured resistivity peak near Curie temperature is broader than the calculated one, which together with the estimated large exchange parameter Jpd = 2.3 eV calls for an extension of the present theory to the intermediate or strong coupling cases.
Original languageEnglish
Pages (from-to)449-462
Number of pages14
JournalPhysica Status Solidi B: Basic Research
Volume227
Issue number2
DOIs
Publication statusPublished - 2001
MoE publication typeA1 Journal article-refereed

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Hole mobility
hole mobility
Scattering
Galvanomagnetic effects
electrical resistivity
Exchange interactions
Curie temperature
Charge carriers
scattering
Green's function
Relaxation time
charge carriers
Temperature distribution
temperature distribution
Green's functions
relaxation time
disorders
Impurities
Ions
Semiconductor materials

Cite this

Kuivalainen, Pekka. / Spin-dependent transport in heavily Mn-doped GaAs. In: Physica Status Solidi B: Basic Research. 2001 ; Vol. 227, No. 2. pp. 449-462.
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Spin-dependent transport in heavily Mn-doped GaAs. / Kuivalainen, Pekka (Corresponding Author).

In: Physica Status Solidi B: Basic Research, Vol. 227, No. 2, 2001, p. 449-462.

Research output: Contribution to journalArticleScientificpeer-review

TY - JOUR

T1 - Spin-dependent transport in heavily Mn-doped GaAs

AU - Kuivalainen, Pekka

PY - 2001

Y1 - 2001

N2 - The theory of magnetotransport in heavily Mn‐doped GaAs, a p‐type ferromagnetic semiconductor, is developed in the weak coupling limit by calculating the temperature and magnetic field dependences of the spin disorder scattering‐limited hole mobility. The theory is based on the exchange interaction between the itinerant holes and the localized 3d spins of the Mn ions, and it is developed by using Zubarev's double‐time Green's functions. The relaxation time of the charge carriers is calculated from the imaginary part of the self‐energy appearing in the derived hole propagator. Adding a contribution from impurity scattering the total hole mobility is estimated. Comparison to the experimental resistivity data shows that a good agreement with the measured results is obtained only if the short‐range order and the consequent T dependence of the critical scattering are taken into account in the paramagnetic region. The measured resistivity peak near Curie temperature is broader than the calculated one, which together with the estimated large exchange parameter Jpd = 2.3 eV calls for an extension of the present theory to the intermediate or strong coupling cases.

AB - The theory of magnetotransport in heavily Mn‐doped GaAs, a p‐type ferromagnetic semiconductor, is developed in the weak coupling limit by calculating the temperature and magnetic field dependences of the spin disorder scattering‐limited hole mobility. The theory is based on the exchange interaction between the itinerant holes and the localized 3d spins of the Mn ions, and it is developed by using Zubarev's double‐time Green's functions. The relaxation time of the charge carriers is calculated from the imaginary part of the self‐energy appearing in the derived hole propagator. Adding a contribution from impurity scattering the total hole mobility is estimated. Comparison to the experimental resistivity data shows that a good agreement with the measured results is obtained only if the short‐range order and the consequent T dependence of the critical scattering are taken into account in the paramagnetic region. The measured resistivity peak near Curie temperature is broader than the calculated one, which together with the estimated large exchange parameter Jpd = 2.3 eV calls for an extension of the present theory to the intermediate or strong coupling cases.

U2 - 10.1002/1521-3951(200110)227:2<449::AID-PSSB449>3.0.CO;2-4

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JO - Physica Status Solidi B: Basic Solid State Physics

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