Spin-dependent transport in heavily Mn-doped GaAs II

Effect of collisional broadening

Pekka Kuivalainen (Corresponding Author), Natalia Lebedeva

Research output: Contribution to journalArticleScientificpeer-review

2 Citations (Scopus)

Abstract

We have studied theoretically electrical transport in a new ferromagnetic semiconductor (Ga,Mn)As by taking into account spin disorder and impurity scatterings. Especially we have investigated the effect of the collisional broadening on the spin disorder scattering due to the strong interaction of charge carriers with the Mn ions.
By using Zubarev's double‐time Green's functions we derive an estimate for the carrier lifetime in the case of strongly broadened band states. The collisional broadening results in a Lorenzian‐type spectral function, which in turn broadens the resistivity peak near the Curie temperature as compared to the conventional δ‐function‐type spectral function.
This improves the fit of the calculated results to the experimental resistivity data in Ga0.947Mn0.053As.
Original languageEnglish
Pages (from-to)512-518
JournalPhysica Status Solidi B: Basic Research
Volume231
Issue number2
DOIs
Publication statusPublished - 2002
MoE publication typeA1 Journal article-refereed

Fingerprint

disorders
Scattering
electrical resistivity
Carrier lifetime
Beam plasma interactions
Curie temperature
carrier lifetime
Charge carriers
scattering
Green's function
charge carriers
Green's functions
Impurities
Ions
Semiconductor materials
impurities
estimates
ions
gallium arsenide

Cite this

Kuivalainen, Pekka ; Lebedeva, Natalia. / Spin-dependent transport in heavily Mn-doped GaAs II : Effect of collisional broadening. In: Physica Status Solidi B: Basic Research. 2002 ; Vol. 231, No. 2. pp. 512-518.
@article{09b91c57988a476c8ed3daf5a25817c2,
title = "Spin-dependent transport in heavily Mn-doped GaAs II: Effect of collisional broadening",
abstract = "We have studied theoretically electrical transport in a new ferromagnetic semiconductor (Ga,Mn)As by taking into account spin disorder and impurity scatterings. Especially we have investigated the effect of the collisional broadening on the spin disorder scattering due to the strong interaction of charge carriers with the Mn ions. By using Zubarev's double‐time Green's functions we derive an estimate for the carrier lifetime in the case of strongly broadened band states. The collisional broadening results in a Lorenzian‐type spectral function, which in turn broadens the resistivity peak near the Curie temperature as compared to the conventional δ‐function‐type spectral function. This improves the fit of the calculated results to the experimental resistivity data in Ga0.947Mn0.053As.",
author = "Pekka Kuivalainen and Natalia Lebedeva",
year = "2002",
doi = "10.1002/1521-3951(200206)231:2<512::AID-PSSB512>3.0.CO;2-2",
language = "English",
volume = "231",
pages = "512--518",
journal = "Physica Status Solidi B: Basic Solid State Physics",
issn = "0370-1972",
publisher = "Wiley-VCH Verlag",
number = "2",

}

Spin-dependent transport in heavily Mn-doped GaAs II : Effect of collisional broadening. / Kuivalainen, Pekka (Corresponding Author); Lebedeva, Natalia.

In: Physica Status Solidi B: Basic Research, Vol. 231, No. 2, 2002, p. 512-518.

Research output: Contribution to journalArticleScientificpeer-review

TY - JOUR

T1 - Spin-dependent transport in heavily Mn-doped GaAs II

T2 - Effect of collisional broadening

AU - Kuivalainen, Pekka

AU - Lebedeva, Natalia

PY - 2002

Y1 - 2002

N2 - We have studied theoretically electrical transport in a new ferromagnetic semiconductor (Ga,Mn)As by taking into account spin disorder and impurity scatterings. Especially we have investigated the effect of the collisional broadening on the spin disorder scattering due to the strong interaction of charge carriers with the Mn ions. By using Zubarev's double‐time Green's functions we derive an estimate for the carrier lifetime in the case of strongly broadened band states. The collisional broadening results in a Lorenzian‐type spectral function, which in turn broadens the resistivity peak near the Curie temperature as compared to the conventional δ‐function‐type spectral function. This improves the fit of the calculated results to the experimental resistivity data in Ga0.947Mn0.053As.

AB - We have studied theoretically electrical transport in a new ferromagnetic semiconductor (Ga,Mn)As by taking into account spin disorder and impurity scatterings. Especially we have investigated the effect of the collisional broadening on the spin disorder scattering due to the strong interaction of charge carriers with the Mn ions. By using Zubarev's double‐time Green's functions we derive an estimate for the carrier lifetime in the case of strongly broadened band states. The collisional broadening results in a Lorenzian‐type spectral function, which in turn broadens the resistivity peak near the Curie temperature as compared to the conventional δ‐function‐type spectral function. This improves the fit of the calculated results to the experimental resistivity data in Ga0.947Mn0.053As.

U2 - 10.1002/1521-3951(200206)231:2<512::AID-PSSB512>3.0.CO;2-2

DO - 10.1002/1521-3951(200206)231:2<512::AID-PSSB512>3.0.CO;2-2

M3 - Article

VL - 231

SP - 512

EP - 518

JO - Physica Status Solidi B: Basic Solid State Physics

JF - Physica Status Solidi B: Basic Solid State Physics

SN - 0370-1972

IS - 2

ER -