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Spin-dependent transport in heavily Mn-doped GaAs
Pekka Kuivalainen
*
*
Corresponding author for this work
VTT Technical Research Centre of Finland
Research output
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Article
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Scientific
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peer-review
16
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Keyphrases
Resistivity
100%
Gallium Arsenide
100%
Hole Mobility
100%
Spin Transport
100%
Mn-doped
100%
Temperature Field
50%
Charge Carriers
50%
Strong Coupling
50%
Curie Temperature
50%
Self-powered
50%
Green's Function
50%
Relaxation Time
50%
Mn Ions
50%
Magnetotransport
50%
Exchange Parameters
50%
Magnetic Field Dependence
50%
Exchange Interaction
50%
Spin Disorder
50%
Weak Coupling Limit
50%
Intermediate Coupling
50%
Critical Scattering
50%
Impurity Scattering
50%
Itinerant
50%
Ferromagnetic Semiconductor
50%
INIS
doped materials
100%
transport
100%
spin
100%
gallium arsenides
100%
holes
66%
scattering
66%
hole mobility
66%
comparative evaluations
33%
data
33%
coupling
33%
magnetic fields
33%
impurities
33%
peaks
33%
semiconductor materials
33%
paramagnetism
33%
charge carriers
33%
strong-coupling model
33%
curie temperature
33%
relaxation time
33%
manganese ions
33%
green function
33%
exchange interactions
33%
intermediate coupling
33%
propagator
33%
Engineering
Good Agreement
100%
Imaginary Part
100%
Measured Result
100%
Data Show
100%
Gallium Arsenide
100%
Magnetic Field
100%
Temperature Distribution
100%
Charge Carrier
100%
Relaxation Time
100%
Green's Functions
100%
Physics
Green's Functions
100%
Relaxation Time
100%
Magnetic Field
100%
Temperature Distribution
100%
Curie Temperature
100%
Chemistry
Hole Mobility
100%
Curie Temperature
50%
Tight Binding Model
50%
Relaxation
50%
Exchange Interaction
50%
Magnetic Field
50%
Charge Carrier
50%
Material Science
Gallium Arsenide
100%
Electrical Resistivity
100%
Hole Mobility
100%
Curie Temperature
50%
Charge Carrier
50%