Sputtered W-N diffusion barriers

Hannu Kattelus, Elzbieta Kolawa, Klaus Affolter, Marc Nicolet

Research output: Contribution to journalArticleScientificpeer-review

105 Citations (Scopus)

Abstract

The thermal stability of reactively sputtered tungsten–nitrogen alloy thin films is investigated for the application as diffusion barriers in silicon contact metallizations. The composition of W–N barriers is varied over a wide range including pure W. Aluminum, gold, and silver are used as low resistivity overlayers. Metallurgical interactions at temperatures ranging from 500 to 900 °C are studied. Incorporating nitrogen into tungsten advantageously stabilizes all three systems. The overall failure takes place rapidly above critical temperatures that depend on both the metal overlayer and the microstructure of the barrier. In some cases, W–N alloys can effectively prevent interdiffusion at temperatures as high as 800 °C for 30 min.
Original languageEnglish
Pages (from-to)2246 - 2254
Number of pages9
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume3
Issue number6
DOIs
Publication statusPublished - 1985
MoE publication typeNot Eligible

Fingerprint

Diffusion barriers
Tungsten
Silicon
Metallizing
Aluminum
Silver
Gold
Temperature
electric contacts
critical temperature
tungsten
Thermodynamic stability
thermal stability
Nitrogen
Metals
silver
gold
aluminum
nitrogen
Thin films

Cite this

Kattelus, Hannu ; Kolawa, Elzbieta ; Affolter, Klaus ; Nicolet, Marc. / Sputtered W-N diffusion barriers. In: Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films. 1985 ; Vol. 3, No. 6. pp. 2246 - 2254.
@article{e228c07ee2ee4a79afb94a5b58826511,
title = "Sputtered W-N diffusion barriers",
abstract = "The thermal stability of reactively sputtered tungsten–nitrogen alloy thin films is investigated for the application as diffusion barriers in silicon contact metallizations. The composition of W–N barriers is varied over a wide range including pure W. Aluminum, gold, and silver are used as low resistivity overlayers. Metallurgical interactions at temperatures ranging from 500 to 900 °C are studied. Incorporating nitrogen into tungsten advantageously stabilizes all three systems. The overall failure takes place rapidly above critical temperatures that depend on both the metal overlayer and the microstructure of the barrier. In some cases, W–N alloys can effectively prevent interdiffusion at temperatures as high as 800 °C for 30 min.",
author = "Hannu Kattelus and Elzbieta Kolawa and Klaus Affolter and Marc Nicolet",
year = "1985",
doi = "10.1116/1.572901",
language = "English",
volume = "3",
pages = "2246 -- 2254",
journal = "Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films",
issn = "0734-2101",
publisher = "American Vacuum Society AVS",
number = "6",

}

Kattelus, H, Kolawa, E, Affolter, K & Nicolet, M 1985, 'Sputtered W-N diffusion barriers', Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, vol. 3, no. 6, pp. 2246 - 2254. https://doi.org/10.1116/1.572901

Sputtered W-N diffusion barriers. / Kattelus, Hannu; Kolawa, Elzbieta; Affolter, Klaus; Nicolet, Marc.

In: Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, Vol. 3, No. 6, 1985, p. 2246 - 2254.

Research output: Contribution to journalArticleScientificpeer-review

TY - JOUR

T1 - Sputtered W-N diffusion barriers

AU - Kattelus, Hannu

AU - Kolawa, Elzbieta

AU - Affolter, Klaus

AU - Nicolet, Marc

PY - 1985

Y1 - 1985

N2 - The thermal stability of reactively sputtered tungsten–nitrogen alloy thin films is investigated for the application as diffusion barriers in silicon contact metallizations. The composition of W–N barriers is varied over a wide range including pure W. Aluminum, gold, and silver are used as low resistivity overlayers. Metallurgical interactions at temperatures ranging from 500 to 900 °C are studied. Incorporating nitrogen into tungsten advantageously stabilizes all three systems. The overall failure takes place rapidly above critical temperatures that depend on both the metal overlayer and the microstructure of the barrier. In some cases, W–N alloys can effectively prevent interdiffusion at temperatures as high as 800 °C for 30 min.

AB - The thermal stability of reactively sputtered tungsten–nitrogen alloy thin films is investigated for the application as diffusion barriers in silicon contact metallizations. The composition of W–N barriers is varied over a wide range including pure W. Aluminum, gold, and silver are used as low resistivity overlayers. Metallurgical interactions at temperatures ranging from 500 to 900 °C are studied. Incorporating nitrogen into tungsten advantageously stabilizes all three systems. The overall failure takes place rapidly above critical temperatures that depend on both the metal overlayer and the microstructure of the barrier. In some cases, W–N alloys can effectively prevent interdiffusion at temperatures as high as 800 °C for 30 min.

U2 - 10.1116/1.572901

DO - 10.1116/1.572901

M3 - Article

VL - 3

SP - 2246

EP - 2254

JO - Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

JF - Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

SN - 0734-2101

IS - 6

ER -