Abstract
A micromechanical 13.1-MHz bulk acoustic mode silicon resonator having a
high quality factor (Q=130 000) and high maximum drive level (P= 0.12
mW at the hysteresis limit) is demonstrated. The prototype resonator is
fabricated of single-crystal silicon by reactive ion etching of a
silicon-on-insulator wafer. A demonstration oscillator based on the new
resonator shows single-sideband phase noise of -138 dBc/Hz at 1 kHz
offset from the carrier.
Original language | English |
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Pages (from-to) | 173 - 175 |
Number of pages | 3 |
Journal | IEEE Electron Device Letters |
Volume | 25 |
Issue number | 4 |
DOIs | |
Publication status | Published - 2004 |
MoE publication type | A1 Journal article-refereed |
Keywords
- micromechanical oscillators
- bulk acoustic wave devices
- microresonators
- oscillator noise
- phase noise
- resonators
- silicon on insulator technology