Square-extensional mode single-crystal silicon micromechanical resonator for low-phase-noise oscillator applications

Ville Kaajakari; Tomi Mattila; Aarne Oja; Jyrki Kiihamäki; Heikki Seppä

doi:10.1109/LED.2004.824840

Square-extensional mode single-crystal silicon micromechanical resonator for low-phase-noise oscillator applications

Ville Kaajakari, Tomi Mattila, Aarne Oja, Jyrki Kiihamäki, Heikki Seppä

Research output: Contribution to journal › Article › Scientific › peer-review

170 Citations (Scopus)

Abstract

A micromechanical 13.1-MHz bulk acoustic mode silicon resonator having a high quality factor (Q=130 000) and high maximum drive level (P= 0.12 mW at the hysteresis limit) is demonstrated. The prototype resonator is fabricated of single-crystal silicon by reactive ion etching of a silicon-on-insulator wafer. A demonstration oscillator based on the new resonator shows single-sideband phase noise of -138 dBc/Hz at 1 kHz offset from the carrier.

Original language	English
Pages (from-to)	173 - 175
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	25
Issue number	4
DOIs	https://doi.org/10.1109/LED.2004.824840
Publication status	Published - 2004
MoE publication type	A1 Journal article-refereed

Keywords

micromechanical oscillators
bulk acoustic wave devices
microresonators
oscillator noise
phase noise
resonators
silicon on insulator technology

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10.1109/LED.2004.824840

http://www.vtt.fi/inf/julkaisut/muut/2004/edl2004_preprint.pdf

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title = "Square-extensional mode single-crystal silicon micromechanical resonator for low-phase-noise oscillator applications",

abstract = "A micromechanical 13.1-MHz bulk acoustic mode silicon resonator having a high quality factor (Q=130 000) and high maximum drive level (P= 0.12 mW at the hysteresis limit) is demonstrated. The prototype resonator is fabricated of single-crystal silicon by reactive ion etching of a silicon-on-insulator wafer. A demonstration oscillator based on the new resonator shows single-sideband phase noise of -138 dBc/Hz at 1 kHz offset from the carrier.",

keywords = "micromechanical oscillators, bulk acoustic wave devices, microresonators, oscillator noise, phase noise, resonators, silicon on insulator technology",

author = "Ville Kaajakari and Tomi Mattila and Aarne Oja and Jyrki Kiiham{\"a}ki and Heikki Sepp{\"a}",

year = "2004",

doi = "10.1109/LED.2004.824840",

language = "English",

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publisher = "IEEE Institute of Electrical and Electronic Engineers",

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T1 - Square-extensional mode single-crystal silicon micromechanical resonator for low-phase-noise oscillator applications

AU - Kaajakari, Ville

AU - Mattila, Tomi

AU - Oja, Aarne

AU - Kiihamäki, Jyrki

AU - Seppä, Heikki

PY - 2004

Y1 - 2004

N2 - A micromechanical 13.1-MHz bulk acoustic mode silicon resonator having a high quality factor (Q=130 000) and high maximum drive level (P= 0.12 mW at the hysteresis limit) is demonstrated. The prototype resonator is fabricated of single-crystal silicon by reactive ion etching of a silicon-on-insulator wafer. A demonstration oscillator based on the new resonator shows single-sideband phase noise of -138 dBc/Hz at 1 kHz offset from the carrier.

AB - A micromechanical 13.1-MHz bulk acoustic mode silicon resonator having a high quality factor (Q=130 000) and high maximum drive level (P= 0.12 mW at the hysteresis limit) is demonstrated. The prototype resonator is fabricated of single-crystal silicon by reactive ion etching of a silicon-on-insulator wafer. A demonstration oscillator based on the new resonator shows single-sideband phase noise of -138 dBc/Hz at 1 kHz offset from the carrier.

KW - micromechanical oscillators

KW - bulk acoustic wave devices

KW - microresonators

KW - oscillator noise

KW - phase noise

KW - resonators

KW - silicon on insulator technology

U2 - 10.1109/LED.2004.824840

DO - 10.1109/LED.2004.824840

M3 - Article

SN - 0741-3106

VL - 25

SP - 173

EP - 175

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 4

ER -

Square-extensional mode single-crystal silicon micromechanical resonator for low-phase-noise oscillator applications

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Keywords

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