Square-extensional mode single-crystal silicon micromechanical RF-resonator

Ville Kaajakari; Tomi Mattila; Aarne Oja; Jyrki Kiihamäki; Hannu Kattelus; Mika Koskenvuori; Pekka Rantakari; Ilkka Tittonen; Heikki Seppä

doi:10.1109/SENSOR.2003.1216924

Square-extensional mode single-crystal silicon micromechanical RF-resonator

Ville Kaajakari
, Tomi Mattila
, Aarne Oja
, Jyrki Kiihamäki
, Hannu Kattelus
, Mika Koskenvuori
, Pekka Rantakari
, Ilkka Tittonen
, Heikki Seppä

Helsinki University of Technology
VTT (former employee or external)

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

56 Citations (Scopus)

Abstract

A micromechanical 13.1 MHz bulk acoustic mode (BAW) silicon resonator is demonstrated. The vibration mode can be characterized as a 2-D plate expansion that preserves the original square shape. The prototype resonator is fabricated of single-crystal silicon by reactive ion etching a silicon-on-insulator (SOI) wafer. The measured high quality factor (Q = 130 000) and current output (iMAX~160 A) make the resonator suitable for reference oscillator applications. An electrical equivalent circuit based on physical device parameters is derived and experimentally verified.

Original language	English
Title of host publication	TRANSDUCERS 2003 - The 12th International Conference on Solid-State Sensors, Actuators and Microsystems
Publisher	IEEE Institute of Electrical and Electronic Engineers
Pages	951-954
Volume	2
ISBN (Print)	978-0-7803-7731-8
DOIs	https://doi.org/10.1109/SENSOR.2003.1216924
Publication status	Published - 2003
MoE publication type	A4 Article in a conference publication
Event	12th International Conference on Solid State Sensors, Actuators and Microsystems, Transducers '03 - Boston, United States Duration: 8 Jun 2003 → 12 Jun 2003 Conference number: 12

Conference

Conference	12th International Conference on Solid State Sensors, Actuators and Microsystems, Transducers '03
Abbreviated title	Transducers '03
Country/Territory	United States
City	Boston
Period	8/06/03 → 12/06/03

Keywords

RF-MEMS
resonator
SOI

Access to Document

10.1109/SENSOR.2003.1216924

Cite this

Kaajakari, V., Mattila, T., Oja, A., Kiihamäki, J., Kattelus, H., Koskenvuori, M., Rantakari, P., Tittonen, I., & Seppä, H. (2003). Square-extensional mode single-crystal silicon micromechanical RF-resonator. In TRANSDUCERS 2003 - The 12th International Conference on Solid-State Sensors, Actuators and Microsystems (Vol. 2, pp. 951-954). IEEE Institute of Electrical and Electronic Engineers. https://doi.org/10.1109/SENSOR.2003.1216924

@inproceedings{30169ed70b22455e8354e70ba3b75ab0,

title = "Square-extensional mode single-crystal silicon micromechanical RF-resonator",

abstract = "A micromechanical 13.1 MHz bulk acoustic mode (BAW) silicon resonator is demonstrated. The vibration mode can be characterized as a 2-D plate expansion that preserves the original square shape. The prototype resonator is fabricated of single-crystal silicon by reactive ion etching a silicon-on-insulator (SOI) wafer. The measured high quality factor (Q = 130 000) and current output (iMAX\textasciitilde{}160 A) make the resonator suitable for reference oscillator applications. An electrical equivalent circuit based on physical device parameters is derived and experimentally verified.",

keywords = "RF-MEMS, resonator, SOI",

author = "Ville Kaajakari and Tomi Mattila and Aarne Oja and Jyrki Kiiham{\"a}ki and Hannu Kattelus and Mika Koskenvuori and Pekka Rantakari and Ilkka Tittonen and Heikki Sepp{\"a}",

note = "Project code: T3SU00015; 12th International Conference on Solid State Sensors, Actuators and Microsystems, Transducers '03, Transducers '03 ; Conference date: 08-06-2003 Through 12-06-2003",

year = "2003",

doi = "10.1109/SENSOR.2003.1216924",

language = "English",

isbn = "978-0-7803-7731-8",

volume = "2",

pages = "951--954",

booktitle = "TRANSDUCERS 2003 - The 12th International Conference on Solid-State Sensors, Actuators and Microsystems",

publisher = "IEEE Institute of Electrical and Electronic Engineers",

address = "United States",

}

Kaajakari, V, Mattila, T, Oja, A, Kiihamäki, J, Kattelus, H, Koskenvuori, M, Rantakari, P, Tittonen, I & Seppä, H 2003, Square-extensional mode single-crystal silicon micromechanical RF-resonator. in TRANSDUCERS 2003 - The 12th International Conference on Solid-State Sensors, Actuators and Microsystems. vol. 2, IEEE Institute of Electrical and Electronic Engineers, pp. 951-954, 12th International Conference on Solid State Sensors, Actuators and Microsystems, Transducers '03, Boston, Massachusetts, United States, 8/06/03. https://doi.org/10.1109/SENSOR.2003.1216924

Square-extensional mode single-crystal silicon micromechanical RF-resonator. / Kaajakari, Ville; Mattila, Tomi; Oja, Aarne et al.
TRANSDUCERS 2003 - The 12th International Conference on Solid-State Sensors, Actuators and Microsystems. Vol. 2 IEEE Institute of Electrical and Electronic Engineers, 2003. p. 951-954.

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

TY - GEN

T1 - Square-extensional mode single-crystal silicon micromechanical RF-resonator

AU - Kaajakari, Ville

AU - Mattila, Tomi

AU - Oja, Aarne

AU - Kiihamäki, Jyrki

AU - Kattelus, Hannu

AU - Koskenvuori, Mika

AU - Rantakari, Pekka

AU - Tittonen, Ilkka

AU - Seppä, Heikki

N1 - Conference code: 12

PY - 2003

Y1 - 2003

N2 - A micromechanical 13.1 MHz bulk acoustic mode (BAW) silicon resonator is demonstrated. The vibration mode can be characterized as a 2-D plate expansion that preserves the original square shape. The prototype resonator is fabricated of single-crystal silicon by reactive ion etching a silicon-on-insulator (SOI) wafer. The measured high quality factor (Q = 130 000) and current output (iMAX~160 A) make the resonator suitable for reference oscillator applications. An electrical equivalent circuit based on physical device parameters is derived and experimentally verified.

AB - A micromechanical 13.1 MHz bulk acoustic mode (BAW) silicon resonator is demonstrated. The vibration mode can be characterized as a 2-D plate expansion that preserves the original square shape. The prototype resonator is fabricated of single-crystal silicon by reactive ion etching a silicon-on-insulator (SOI) wafer. The measured high quality factor (Q = 130 000) and current output (iMAX~160 A) make the resonator suitable for reference oscillator applications. An electrical equivalent circuit based on physical device parameters is derived and experimentally verified.

KW - RF-MEMS

KW - resonator

KW - SOI

U2 - 10.1109/SENSOR.2003.1216924

DO - 10.1109/SENSOR.2003.1216924

M3 - Conference article in proceedings

SN - 978-0-7803-7731-8

VL - 2

SP - 951

EP - 954

BT - TRANSDUCERS 2003 - The 12th International Conference on Solid-State Sensors, Actuators and Microsystems

PB - IEEE Institute of Electrical and Electronic Engineers

T2 - 12th International Conference on Solid State Sensors, Actuators and Microsystems, Transducers '03

Y2 - 8 June 2003 through 12 June 2003

ER -

Kaajakari V, Mattila T, Oja A, Kiihamäki J, Kattelus H, Koskenvuori M et al. Square-extensional mode single-crystal silicon micromechanical RF-resonator. In TRANSDUCERS 2003 - The 12th International Conference on Solid-State Sensors, Actuators and Microsystems. Vol. 2. IEEE Institute of Electrical and Electronic Engineers. 2003. p. 951-954 doi: 10.1109/SENSOR.2003.1216924

Square-extensional mode single-crystal silicon micromechanical RF-resonator

Abstract

Conference

Keywords

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