Stability and Residue Studies of Complexing Agents in SC-1 Bath

Heini Saloniemi, Simo Eränen, Raimo A. Ketola, Juha Kokkonen, Sari Lehto, Kaija Luomanperä, Pertti Vastamäki, Heli Sirén, Olli Anttila

    Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

    Abstract

    The stability of three complexing agents, HEDP, CDTA and DTPMP, in the SC-1 bath was determined. The feasibility of using capillary electrophoresis (CE) and electrospray ionization mass spectrometry (ESI/MS) for such studies was assessed. CE was employed for stability studies and ESI/MS was used to analyze small complexing agent concentrations relevant to residue studies. Chem. residues were studied by secondary ion mass spectrometry.
    Original languageEnglish
    Title of host publicationUltra Clean Processing of Silicon Surfaces VI
    EditorsMarc Heyns, Paul Mertens, Marc Meuris
    Pages41-44
    DOIs
    Publication statusPublished - 2003
    MoE publication typeA4 Article in a conference publication
    Event6th International Symposium on the Ultra Clean Processing of Silicon Surfaces, UCPSS 2002 - Oostende, Belgium
    Duration: 16 Sep 200218 Sep 2002
    Conference number: 6

    Publication series

    SeriesSolid State Phenomena
    Volume92
    ISSN1012-0394

    Conference

    Conference6th International Symposium on the Ultra Clean Processing of Silicon Surfaces, UCPSS 2002
    Abbreviated titleUCPSS 2002
    CountryBelgium
    CityOostende
    Period16/09/0218/09/02

    Keywords

    • capillary electrophoresis
    • complexing agents
    • decomposition
    • electrospray ionization mass spectrometry
    • secondary-ion mass spectrometry
    • stability

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  • Cite this

    Saloniemi, H., Eränen, S., Ketola, R. A., Kokkonen, J., Lehto, S., Luomanperä, K., Vastamäki, P., Sirén, H., & Anttila, O. (2003). Stability and Residue Studies of Complexing Agents in SC-1 Bath. In M. Heyns, P. Mertens, & M. Meuris (Eds.), Ultra Clean Processing of Silicon Surfaces VI (pp. 41-44). Solid State Phenomena, Vol.. 92 https://doi.org/10.4028/www.scientific.net/SSP.92.41