Stability of wafer level vacuum encapsulated single-crystal silicon resonators

Ville Kaajakari; Jyrki Kiihamäki; Aarne Oja; Sami Pietikäinen; Ville Kokkala; Heikki Kuisma

doi:10.1016/j.sna.2005.10.034

Stability of wafer level vacuum encapsulated single-crystal silicon resonators

Ville Kaajakari (Corresponding Author), Jyrki Kiihamäki, Aarne Oja, Sami Pietikäinen, Ville Kokkala, Heikki Kuisma

Research output: Contribution to journal › Article › Scientific › peer-review

46 Citations (Scopus)

Abstract

Stability of wafer level vacuum encapsulated micromechanical resonators is characterized. The resonators are etched of silicon-on-insulator (SOI) wafers using deep reactive ion etching (DRIE) and encapsulated with anodic bonding. Bulk acoustic wave (BAW) resonator show drift better than 0.1 ppm/month demonstrating that the stability requirements for a reference oscillator can be met with MEMS. The drift of flexural resonators range from 4 ppm/month to over 500 ppm/month depending on resonator anchoring. The large drift exhibited by some flexural resonator types is attributed to packaging related stresses demonstrated by the sample temperature–frequency coefficients differing from the bulk silicon value.

Original language	English
Pages (from-to)	42-47
Number of pages	6
Journal	Sensors and Actuators A: Physical
Volume	130-131
DOIs	https://doi.org/10.1016/j.sna.2005.10.034
Publication status	Published - 2006
MoE publication type	A1 Journal article-refereed
Event	13th International Conference on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS '05 - Seoul, Korea, Republic of Duration: 5 Jun 2005 → 9 Jun 2005

Keywords

microresonators
stability
reference oscillator
resonators

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10.1016/j.sna.2005.10.034

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title = "Stability of wafer level vacuum encapsulated single-crystal silicon resonators",

abstract = "Stability of wafer level vacuum encapsulated micromechanical resonators is characterized. The resonators are etched of silicon-on-insulator (SOI) wafers using deep reactive ion etching (DRIE) and encapsulated with anodic bonding. Bulk acoustic wave (BAW) resonator show drift better than 0.1 ppm/month demonstrating that the stability requirements for a reference oscillator can be met with MEMS. The drift of flexural resonators range from 4 ppm/month to over 500 ppm/month depending on resonator anchoring. The large drift exhibited by some flexural resonator types is attributed to packaging related stresses demonstrated by the sample temperature–frequency coefficients differing from the bulk silicon value.",

keywords = "microresonators, stability, reference oscillator, resonators",

author = "Ville Kaajakari and Jyrki Kiiham{\"a}ki and Aarne Oja and Sami Pietik{\"a}inen and Ville Kokkala and Heikki Kuisma",

year = "2006",

doi = "10.1016/j.sna.2005.10.034",

language = "English",

volume = "130-131",

pages = "42--47",

journal = "Sensors and Actuators A: Physical",

issn = "0924-4247",

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note = "13th International Conference on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS '05, TRANSDUCERS '05 ; Conference date: 05-06-2005 Through 09-06-2005",

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TY - JOUR

T1 - Stability of wafer level vacuum encapsulated single-crystal silicon resonators

AU - Kaajakari, Ville

AU - Kiihamäki, Jyrki

AU - Oja, Aarne

AU - Pietikäinen, Sami

AU - Kokkala, Ville

AU - Kuisma, Heikki

PY - 2006

Y1 - 2006

N2 - Stability of wafer level vacuum encapsulated micromechanical resonators is characterized. The resonators are etched of silicon-on-insulator (SOI) wafers using deep reactive ion etching (DRIE) and encapsulated with anodic bonding. Bulk acoustic wave (BAW) resonator show drift better than 0.1 ppm/month demonstrating that the stability requirements for a reference oscillator can be met with MEMS. The drift of flexural resonators range from 4 ppm/month to over 500 ppm/month depending on resonator anchoring. The large drift exhibited by some flexural resonator types is attributed to packaging related stresses demonstrated by the sample temperature–frequency coefficients differing from the bulk silicon value.

AB - Stability of wafer level vacuum encapsulated micromechanical resonators is characterized. The resonators are etched of silicon-on-insulator (SOI) wafers using deep reactive ion etching (DRIE) and encapsulated with anodic bonding. Bulk acoustic wave (BAW) resonator show drift better than 0.1 ppm/month demonstrating that the stability requirements for a reference oscillator can be met with MEMS. The drift of flexural resonators range from 4 ppm/month to over 500 ppm/month depending on resonator anchoring. The large drift exhibited by some flexural resonator types is attributed to packaging related stresses demonstrated by the sample temperature–frequency coefficients differing from the bulk silicon value.

KW - microresonators

KW - stability

KW - reference oscillator

KW - resonators

U2 - 10.1016/j.sna.2005.10.034

DO - 10.1016/j.sna.2005.10.034

M3 - Article

SN - 0924-4247

VL - 130-131

SP - 42

EP - 47

JO - Sensors and Actuators A: Physical

JF - Sensors and Actuators A: Physical

T2 - 13th International Conference on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS '05

Y2 - 5 June 2005 through 9 June 2005

ER -

Stability of wafer level vacuum encapsulated single-crystal silicon resonators

Abstract

Keywords

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