Stacking faults in WSi2

Resistivity effects

Francois d'Heurle, Francoise LeGoues, R. Joshi, Ilkka Suni

Research output: Contribution to journalArticleScientificpeer-review

33 Citations (Scopus)

Abstract

Films of WSi2 initially deposited in an amorphous form have been known to display an unexpected resistivity maximum when annealed at a temperature corresponding to the transition from the low‐temperature hexagonal structure to the high‐temperature tetragonal structure. It is shown that the resistivity maximum is due to an extremely high (5×106/cm) density of stacking faults. Thus, at least one of the scattering defects which contribute to the relatively high resistivity of WSi2 films has been identified.
Original languageEnglish
Pages (from-to)332 - 334
Number of pages3
JournalApplied Physics Letters
Volume48
Issue number5
DOIs
Publication statusPublished - 1986
MoE publication typeNot Eligible

Fingerprint

crystal defects
electrical resistivity
defects
scattering
temperature

Cite this

d'Heurle, F., LeGoues, F., Joshi, R., & Suni, I. (1986). Stacking faults in WSi2: Resistivity effects. Applied Physics Letters, 48(5), 332 - 334. https://doi.org/10.1063/1.96542
d'Heurle, Francois ; LeGoues, Francoise ; Joshi, R. ; Suni, Ilkka. / Stacking faults in WSi2 : Resistivity effects. In: Applied Physics Letters. 1986 ; Vol. 48, No. 5. pp. 332 - 334.
@article{9efc0f5eced849c49d294e283890ce83,
title = "Stacking faults in WSi2: Resistivity effects",
abstract = "Films of WSi2 initially deposited in an amorphous form have been known to display an unexpected resistivity maximum when annealed at a temperature corresponding to the transition from the low‐temperature hexagonal structure to the high‐temperature tetragonal structure. It is shown that the resistivity maximum is due to an extremely high (5×106/cm) density of stacking faults. Thus, at least one of the scattering defects which contribute to the relatively high resistivity of WSi2 films has been identified.",
author = "Francois d'Heurle and Francoise LeGoues and R. Joshi and Ilkka Suni",
year = "1986",
doi = "10.1063/1.96542",
language = "English",
volume = "48",
pages = "332 -- 334",
journal = "Applied Physics Letters",
issn = "0003-6951",
number = "5",

}

d'Heurle, F, LeGoues, F, Joshi, R & Suni, I 1986, 'Stacking faults in WSi2: Resistivity effects', Applied Physics Letters, vol. 48, no. 5, pp. 332 - 334. https://doi.org/10.1063/1.96542

Stacking faults in WSi2 : Resistivity effects. / d'Heurle, Francois; LeGoues, Francoise; Joshi, R.; Suni, Ilkka.

In: Applied Physics Letters, Vol. 48, No. 5, 1986, p. 332 - 334.

Research output: Contribution to journalArticleScientificpeer-review

TY - JOUR

T1 - Stacking faults in WSi2

T2 - Resistivity effects

AU - d'Heurle, Francois

AU - LeGoues, Francoise

AU - Joshi, R.

AU - Suni, Ilkka

PY - 1986

Y1 - 1986

N2 - Films of WSi2 initially deposited in an amorphous form have been known to display an unexpected resistivity maximum when annealed at a temperature corresponding to the transition from the low‐temperature hexagonal structure to the high‐temperature tetragonal structure. It is shown that the resistivity maximum is due to an extremely high (5×106/cm) density of stacking faults. Thus, at least one of the scattering defects which contribute to the relatively high resistivity of WSi2 films has been identified.

AB - Films of WSi2 initially deposited in an amorphous form have been known to display an unexpected resistivity maximum when annealed at a temperature corresponding to the transition from the low‐temperature hexagonal structure to the high‐temperature tetragonal structure. It is shown that the resistivity maximum is due to an extremely high (5×106/cm) density of stacking faults. Thus, at least one of the scattering defects which contribute to the relatively high resistivity of WSi2 films has been identified.

U2 - 10.1063/1.96542

DO - 10.1063/1.96542

M3 - Article

VL - 48

SP - 332

EP - 334

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 5

ER -

d'Heurle F, LeGoues F, Joshi R, Suni I. Stacking faults in WSi2: Resistivity effects. Applied Physics Letters. 1986;48(5):332 - 334. https://doi.org/10.1063/1.96542