Stacking faults in WSi2: Resistivity effects

Francois d'Heurle, Francoise LeGoues, R. Joshi, Ilkka Suni

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Films of WSi2 initially deposited in an amorphous form have been known to display an unexpected resistivity maximum when annealed at a temperature corresponding to the transition from the low‐temperature hexagonal structure to the high‐temperature tetragonal structure. It is shown that the resistivity maximum is due to an extremely high (5×106/cm) density of stacking faults. Thus, at least one of the scattering defects which contribute to the relatively high resistivity of WSi2 films has been identified.
Original languageEnglish
Pages (from-to)332 - 334
Number of pages3
JournalApplied Physics Letters
Issue number5
Publication statusPublished - 1986
MoE publication typeNot Eligible

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    d'Heurle, F., LeGoues, F., Joshi, R., & Suni, I. (1986). Stacking faults in WSi2: Resistivity effects. Applied Physics Letters, 48(5), 332 - 334.