Sticking probabilities of H2O and Al(CH3)3 during atomic layer deposition of Al2O3

Mikko Utriainen, Karsten Arts (Corresponding author), Vincent Vandalon, Feng Gao, Riikka L. Puurunen, Erwin Kessels, Harm Knoops

Research output: Contribution to conferenceConference AbstractScientificpeer-review

Original languageEnglish
Publication statusPublished - 22 Jan 2019
MoE publication typeNot Eligible
EventPhysics@Veldhoven 2019 - The meeting venue of Physics@Veldhoven is the NH Conference Center Koningshof in Veldhoven., Veldhoeven, Netherlands
Duration: 22 Jan 201923 Jan 2019
https://www.nwo.nl/en/news-and-events/events/physicsveldhoven/Programme

Conference

ConferencePhysics@Veldhoven 2019
CountryNetherlands
CityVeldhoeven
Period22/01/1923/01/19
Internet address

Cite this

Utriainen, M., Arts, K., Vandalon, V., Gao, F., Puurunen, R. L., Kessels, E., & Knoops, H. (2019). Sticking probabilities of H2O and Al(CH3)3 during atomic layer deposition of Al2O3. Abstract from Physics@Veldhoven 2019, Veldhoeven, Netherlands.
Utriainen, Mikko ; Arts, Karsten ; Vandalon, Vincent ; Gao, Feng ; Puurunen, Riikka L. ; Kessels, Erwin ; Knoops, Harm. / Sticking probabilities of H2O and Al(CH3)3 during atomic layer deposition of Al2O3. Abstract from Physics@Veldhoven 2019, Veldhoeven, Netherlands.
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title = "Sticking probabilities of H2O and Al(CH3)3 during atomic layer deposition of Al2O3",
author = "Mikko Utriainen and Karsten Arts and Vincent Vandalon and Feng Gao and Puurunen, {Riikka L.} and Erwin Kessels and Harm Knoops",
note = "Abstract reviewed; Physics@Veldhoven 2019 ; Conference date: 22-01-2019 Through 23-01-2019",
year = "2019",
month = "1",
day = "22",
language = "English",
url = "https://www.nwo.nl/en/news-and-events/events/physicsveldhoven/Programme",

}

Utriainen, M, Arts, K, Vandalon, V, Gao, F, Puurunen, RL, Kessels, E & Knoops, H 2019, 'Sticking probabilities of H2O and Al(CH3)3 during atomic layer deposition of Al2O3' Physics@Veldhoven 2019, Veldhoeven, Netherlands, 22/01/19 - 23/01/19, .

Sticking probabilities of H2O and Al(CH3)3 during atomic layer deposition of Al2O3. / Utriainen, Mikko; Arts, Karsten (Corresponding author); Vandalon, Vincent; Gao, Feng; Puurunen, Riikka L.; Kessels, Erwin; Knoops, Harm.

2019. Abstract from Physics@Veldhoven 2019, Veldhoeven, Netherlands.

Research output: Contribution to conferenceConference AbstractScientificpeer-review

TY - CONF

T1 - Sticking probabilities of H2O and Al(CH3)3 during atomic layer deposition of Al2O3

AU - Utriainen, Mikko

AU - Arts, Karsten

AU - Vandalon, Vincent

AU - Gao, Feng

AU - Puurunen, Riikka L.

AU - Kessels, Erwin

AU - Knoops, Harm

N1 - Abstract reviewed

PY - 2019/1/22

Y1 - 2019/1/22

UR - https://www.nwo.nl/en/news-and-events/events/physicsveldhoven

M3 - Conference Abstract

ER -

Utriainen M, Arts K, Vandalon V, Gao F, Puurunen RL, Kessels E et al. Sticking probabilities of H2O and Al(CH3)3 during atomic layer deposition of Al2O3. 2019. Abstract from Physics@Veldhoven 2019, Veldhoeven, Netherlands.