Strain and electrical characterization of metal-oxide-semiconductor field-effect transistor fabricated on mechanically and thermally transferred silicon on insulator films

F. Lu (Corresponding Author), J. Bickford, C. Novotny, P.K.L. Yu, S.S. Lau, Kimmo Henttinen, Tommi Suni, Ilkka Suni

Research output: Contribution to journalArticleScientificpeer-review

2 Citations (Scopus)

Abstract

Silicon-on-insulator (SOI) substrates were created from two methods of ion cutting: thermal exfoliation (TE) and mechanical exfoliation (ME). These SOI films are characterized to discern the differences in electrical and other properties induced by the ME and TE processes. p-metal-oxide-semiconductor field-effect transistor were fabricated on these SOI substrates as well as on bulk silicon and their I-V characteristics measured and compared to point out materials differences created by the two methods. X-ray diffraction measurements were also performed to supplement the exploration of the TE and ME material properties. Overall the FETs fabricated from the ME SOI outperformed those made from the TE SOI and had similar Ion∕Ioff ratios and off-state drain-source leakage currents to the FETs fabricated from bulk Si.
Original languageEnglish
Pages (from-to)2691 - 2697
Number of pages7
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume22
Issue number6
DOIs
Publication statusPublished - 2004
MoE publication typeA1 Journal article-refereed

Fingerprint

MOSFET devices
Silicon
Field effect transistors
Substrates
Leakage currents
Materials properties
X ray diffraction
Hot Temperature
Ions

Keywords

  • SOI
  • MOSFET
  • smart-cut
  • layer transfer

Cite this

@article{31dd8baf82f8445d8e1f9f5e321861c4,
title = "Strain and electrical characterization of metal-oxide-semiconductor field-effect transistor fabricated on mechanically and thermally transferred silicon on insulator films",
abstract = "Silicon-on-insulator (SOI) substrates were created from two methods of ion cutting: thermal exfoliation (TE) and mechanical exfoliation (ME). These SOI films are characterized to discern the differences in electrical and other properties induced by the ME and TE processes. p-metal-oxide-semiconductor field-effect transistor were fabricated on these SOI substrates as well as on bulk silicon and their I-V characteristics measured and compared to point out materials differences created by the two methods. X-ray diffraction measurements were also performed to supplement the exploration of the TE and ME material properties. Overall the FETs fabricated from the ME SOI outperformed those made from the TE SOI and had similar Ion∕Ioff ratios and off-state drain-source leakage currents to the FETs fabricated from bulk Si.",
keywords = "SOI, MOSFET, smart-cut, layer transfer",
author = "F. Lu and J. Bickford and C. Novotny and P.K.L. Yu and S.S. Lau and Kimmo Henttinen and Tommi Suni and Ilkka Suni",
note = "Project code: T4SU00074",
year = "2004",
doi = "10.1116/1.1819926",
language = "English",
volume = "22",
pages = "2691 -- 2697",
journal = "Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics",
issn = "2166-2746",
publisher = "AVS Science and Technology Society",
number = "6",

}

Strain and electrical characterization of metal-oxide-semiconductor field-effect transistor fabricated on mechanically and thermally transferred silicon on insulator films. / Lu, F. (Corresponding Author); Bickford, J.; Novotny, C.; Yu, P.K.L.; Lau, S.S.; Henttinen, Kimmo; Suni, Tommi; Suni, Ilkka.

In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 22, No. 6, 2004, p. 2691 - 2697.

Research output: Contribution to journalArticleScientificpeer-review

TY - JOUR

T1 - Strain and electrical characterization of metal-oxide-semiconductor field-effect transistor fabricated on mechanically and thermally transferred silicon on insulator films

AU - Lu, F.

AU - Bickford, J.

AU - Novotny, C.

AU - Yu, P.K.L.

AU - Lau, S.S.

AU - Henttinen, Kimmo

AU - Suni, Tommi

AU - Suni, Ilkka

N1 - Project code: T4SU00074

PY - 2004

Y1 - 2004

N2 - Silicon-on-insulator (SOI) substrates were created from two methods of ion cutting: thermal exfoliation (TE) and mechanical exfoliation (ME). These SOI films are characterized to discern the differences in electrical and other properties induced by the ME and TE processes. p-metal-oxide-semiconductor field-effect transistor were fabricated on these SOI substrates as well as on bulk silicon and their I-V characteristics measured and compared to point out materials differences created by the two methods. X-ray diffraction measurements were also performed to supplement the exploration of the TE and ME material properties. Overall the FETs fabricated from the ME SOI outperformed those made from the TE SOI and had similar Ion∕Ioff ratios and off-state drain-source leakage currents to the FETs fabricated from bulk Si.

AB - Silicon-on-insulator (SOI) substrates were created from two methods of ion cutting: thermal exfoliation (TE) and mechanical exfoliation (ME). These SOI films are characterized to discern the differences in electrical and other properties induced by the ME and TE processes. p-metal-oxide-semiconductor field-effect transistor were fabricated on these SOI substrates as well as on bulk silicon and their I-V characteristics measured and compared to point out materials differences created by the two methods. X-ray diffraction measurements were also performed to supplement the exploration of the TE and ME material properties. Overall the FETs fabricated from the ME SOI outperformed those made from the TE SOI and had similar Ion∕Ioff ratios and off-state drain-source leakage currents to the FETs fabricated from bulk Si.

KW - SOI

KW - MOSFET

KW - smart-cut

KW - layer transfer

U2 - 10.1116/1.1819926

DO - 10.1116/1.1819926

M3 - Article

VL - 22

SP - 2691

EP - 2697

JO - Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics

JF - Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics

SN - 2166-2746

IS - 6

ER -