Strain dependence of electron-phonon energy loss rate in many-valley semiconductors

J. T. Muhonen (Corresponding Author), M. J. Prest, Mika Prunnila, Gunnarsson David, V. A. Shah, A. Dobbie, M. Myronov, R. J. H. Morris, T. E. Whall, E.H.C. Parker, D.R. Leadley

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    Abstract

    We demonstrate significant modification of the electron-phonon energy loss rate in a many-valley semiconductor system due to lattice mismatch induced strain. We show that the thermal conductance from the electron system to the phonon bath in strained n+Si, at phonon temperatures between 200 and 480 mK, is more than an order of magnitude lower than that for a similar unstrained sample.
    Original languageEnglish
    Article number182103
    Number of pages3
    JournalApplied Physics Letters
    Volume98
    Issue number18
    DOIs
    Publication statusPublished - 2011
    MoE publication typeA1 Journal article-refereed

    Keywords

    • electron-phonon interactions
    • elemental semiconductors
    • silicon
    • thermal conductivity

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    Muhonen, J. T., Prest, M. J., Prunnila, M., David, G., Shah, V. A., Dobbie, A., Myronov, M., Morris, R. J. H., Whall, T. E., Parker, E. H. C., & Leadley, D. R. (2011). Strain dependence of electron-phonon energy loss rate in many-valley semiconductors. Applied Physics Letters, 98(18), [182103]. https://doi.org/10.1063/1.3579524