Strain dependence of electron-phonon energy loss rate in many-valley semiconductors

J. T. Muhonen (Corresponding Author), M. J. Prest, Mika Prunnila, Gunnarsson David, V. A. Shah, A. Dobbie, M. Myronov, R. J. H. Morris, T. E. Whall, E.H.C. Parker, D.R. Leadley

    Research output: Contribution to journalArticleScientificpeer-review

    14 Citations (Scopus)

    Abstract

    We demonstrate significant modification of the electron-phonon energy loss rate in a many-valley semiconductor system due to lattice mismatch induced strain. We show that the thermal conductance from the electron system to the phonon bath in strained n+Si, at phonon temperatures between 200 and 480 mK, is more than an order of magnitude lower than that for a similar unstrained sample.
    Original languageEnglish
    Article number182103
    Number of pages3
    JournalApplied Physics Letters
    Volume98
    Issue number18
    DOIs
    Publication statusPublished - 2011
    MoE publication typeA1 Journal article-refereed

    Fingerprint

    valleys
    energy dissipation
    baths
    electrons
    temperature

    Keywords

    • electron-phonon interactions
    • elemental semiconductors
    • silicon
    • thermal conductivity

    Cite this

    Muhonen, J. T., Prest, M. J., Prunnila, M., David, G., Shah, V. A., Dobbie, A., ... Leadley, D. R. (2011). Strain dependence of electron-phonon energy loss rate in many-valley semiconductors. Applied Physics Letters, 98(18), [182103]. https://doi.org/10.1063/1.3579524
    Muhonen, J. T. ; Prest, M. J. ; Prunnila, Mika ; David, Gunnarsson ; Shah, V. A. ; Dobbie, A. ; Myronov, M. ; Morris, R. J. H. ; Whall, T. E. ; Parker, E.H.C. ; Leadley, D.R. / Strain dependence of electron-phonon energy loss rate in many-valley semiconductors. In: Applied Physics Letters. 2011 ; Vol. 98, No. 18.
    @article{37c1e6b1895f492db837010019040131,
    title = "Strain dependence of electron-phonon energy loss rate in many-valley semiconductors",
    abstract = "We demonstrate significant modification of the electron-phonon energy loss rate in a many-valley semiconductor system due to lattice mismatch induced strain. We show that the thermal conductance from the electron system to the phonon bath in strained n+Si, at phonon temperatures between 200 and 480 mK, is more than an order of magnitude lower than that for a similar unstrained sample.",
    keywords = "electron-phonon interactions, elemental semiconductors, silicon, thermal conductivity",
    author = "Muhonen, {J. T.} and Prest, {M. J.} and Mika Prunnila and Gunnarsson David and Shah, {V. A.} and A. Dobbie and M. Myronov and Morris, {R. J. H.} and Whall, {T. E.} and E.H.C. Parker and D.R. Leadley",
    year = "2011",
    doi = "10.1063/1.3579524",
    language = "English",
    volume = "98",
    journal = "Applied Physics Letters",
    issn = "0003-6951",
    number = "18",

    }

    Muhonen, JT, Prest, MJ, Prunnila, M, David, G, Shah, VA, Dobbie, A, Myronov, M, Morris, RJH, Whall, TE, Parker, EHC & Leadley, DR 2011, 'Strain dependence of electron-phonon energy loss rate in many-valley semiconductors', Applied Physics Letters, vol. 98, no. 18, 182103. https://doi.org/10.1063/1.3579524

    Strain dependence of electron-phonon energy loss rate in many-valley semiconductors. / Muhonen, J. T. (Corresponding Author); Prest, M. J.; Prunnila, Mika; David, Gunnarsson; Shah, V. A.; Dobbie, A.; Myronov, M.; Morris, R. J. H.; Whall, T. E.; Parker, E.H.C.; Leadley, D.R.

    In: Applied Physics Letters, Vol. 98, No. 18, 182103, 2011.

    Research output: Contribution to journalArticleScientificpeer-review

    TY - JOUR

    T1 - Strain dependence of electron-phonon energy loss rate in many-valley semiconductors

    AU - Muhonen, J. T.

    AU - Prest, M. J.

    AU - Prunnila, Mika

    AU - David, Gunnarsson

    AU - Shah, V. A.

    AU - Dobbie, A.

    AU - Myronov, M.

    AU - Morris, R. J. H.

    AU - Whall, T. E.

    AU - Parker, E.H.C.

    AU - Leadley, D.R.

    PY - 2011

    Y1 - 2011

    N2 - We demonstrate significant modification of the electron-phonon energy loss rate in a many-valley semiconductor system due to lattice mismatch induced strain. We show that the thermal conductance from the electron system to the phonon bath in strained n+Si, at phonon temperatures between 200 and 480 mK, is more than an order of magnitude lower than that for a similar unstrained sample.

    AB - We demonstrate significant modification of the electron-phonon energy loss rate in a many-valley semiconductor system due to lattice mismatch induced strain. We show that the thermal conductance from the electron system to the phonon bath in strained n+Si, at phonon temperatures between 200 and 480 mK, is more than an order of magnitude lower than that for a similar unstrained sample.

    KW - electron-phonon interactions

    KW - elemental semiconductors

    KW - silicon

    KW - thermal conductivity

    U2 - 10.1063/1.3579524

    DO - 10.1063/1.3579524

    M3 - Article

    VL - 98

    JO - Applied Physics Letters

    JF - Applied Physics Letters

    SN - 0003-6951

    IS - 18

    M1 - 182103

    ER -