We demonstrate significant modification of the electron-phonon energy loss rate in a many-valley semiconductor system due to lattice mismatch induced strain. We show that the thermal conductance from the electron system to the phonon bath in strained n+Si, at phonon temperatures between 200 and 480 mK, is more than an order of magnitude lower than that for a similar unstrained sample.
|Number of pages||3|
|Journal||Applied Physics Letters|
|Publication status||Published - 2011|
|MoE publication type||A1 Journal article-refereed|
- electron-phonon interactions
- elemental semiconductors
- thermal conductivity