Strain dependence of electron-phonon energy loss rate in many-valley semiconductors

J. T. Muhonen (Corresponding Author), M. J. Prest, Mika Prunnila, Gunnarsson David, V. A. Shah, A. Dobbie, M. Myronov, R. J. H. Morris, T. E. Whall, E.H.C. Parker, D.R. Leadley

Research output: Contribution to journalArticleScientificpeer-review

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Abstract

We demonstrate significant modification of the electron-phonon energy loss rate in a many-valley semiconductor system due to lattice mismatch induced strain. We show that the thermal conductance from the electron system to the phonon bath in strained n+Si, at phonon temperatures between 200 and 480 mK, is more than an order of magnitude lower than that for a similar unstrained sample.
Original languageEnglish
Article number182103
Number of pages3
JournalApplied Physics Letters
Volume98
Issue number18
DOIs
Publication statusPublished - 2011
MoE publication typeA1 Journal article-refereed

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valleys
energy dissipation
baths
electrons
temperature

Keywords

  • electron-phonon interactions
  • elemental semiconductors
  • silicon
  • thermal conductivity

Cite this

Muhonen, J. T., Prest, M. J., Prunnila, M., David, G., Shah, V. A., Dobbie, A., ... Leadley, D. R. (2011). Strain dependence of electron-phonon energy loss rate in many-valley semiconductors. Applied Physics Letters, 98(18), [182103]. https://doi.org/10.1063/1.3579524
Muhonen, J. T. ; Prest, M. J. ; Prunnila, Mika ; David, Gunnarsson ; Shah, V. A. ; Dobbie, A. ; Myronov, M. ; Morris, R. J. H. ; Whall, T. E. ; Parker, E.H.C. ; Leadley, D.R. / Strain dependence of electron-phonon energy loss rate in many-valley semiconductors. In: Applied Physics Letters. 2011 ; Vol. 98, No. 18.
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Muhonen, JT, Prest, MJ, Prunnila, M, David, G, Shah, VA, Dobbie, A, Myronov, M, Morris, RJH, Whall, TE, Parker, EHC & Leadley, DR 2011, 'Strain dependence of electron-phonon energy loss rate in many-valley semiconductors', Applied Physics Letters, vol. 98, no. 18, 182103. https://doi.org/10.1063/1.3579524

Strain dependence of electron-phonon energy loss rate in many-valley semiconductors. / Muhonen, J. T. (Corresponding Author); Prest, M. J.; Prunnila, Mika; David, Gunnarsson; Shah, V. A.; Dobbie, A.; Myronov, M.; Morris, R. J. H.; Whall, T. E.; Parker, E.H.C.; Leadley, D.R.

In: Applied Physics Letters, Vol. 98, No. 18, 182103, 2011.

Research output: Contribution to journalArticleScientificpeer-review

TY - JOUR

T1 - Strain dependence of electron-phonon energy loss rate in many-valley semiconductors

AU - Muhonen, J. T.

AU - Prest, M. J.

AU - Prunnila, Mika

AU - David, Gunnarsson

AU - Shah, V. A.

AU - Dobbie, A.

AU - Myronov, M.

AU - Morris, R. J. H.

AU - Whall, T. E.

AU - Parker, E.H.C.

AU - Leadley, D.R.

PY - 2011

Y1 - 2011

N2 - We demonstrate significant modification of the electron-phonon energy loss rate in a many-valley semiconductor system due to lattice mismatch induced strain. We show that the thermal conductance from the electron system to the phonon bath in strained n+Si, at phonon temperatures between 200 and 480 mK, is more than an order of magnitude lower than that for a similar unstrained sample.

AB - We demonstrate significant modification of the electron-phonon energy loss rate in a many-valley semiconductor system due to lattice mismatch induced strain. We show that the thermal conductance from the electron system to the phonon bath in strained n+Si, at phonon temperatures between 200 and 480 mK, is more than an order of magnitude lower than that for a similar unstrained sample.

KW - electron-phonon interactions

KW - elemental semiconductors

KW - silicon

KW - thermal conductivity

U2 - 10.1063/1.3579524

DO - 10.1063/1.3579524

M3 - Article

VL - 98

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 18

M1 - 182103

ER -