Abstract
We demonstrate significant modification of the electron-phonon energy loss rate in a many-valley semiconductor system due to lattice mismatch induced strain. We show that the thermal conductance from the electron system to the phonon bath in strained n+Si, at phonon temperatures between 200 and 480 mK, is more than an order of magnitude lower than that for a similar unstrained sample.
Original language | English |
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Article number | 182103 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 98 |
Issue number | 18 |
DOIs | |
Publication status | Published - 2011 |
MoE publication type | A1 Journal article-refereed |
Keywords
- electron-phonon interactions
- elemental semiconductors
- silicon
- thermal conductivity