Strain dependence of electron-phonon energy loss rate in many-valley semiconductors

Juha T. Muhonen; M.J. Prest; Mika Prunnila; David Gunnarsson; V.A. Shah; A. Dobbie; M. Myronov; R.J.H. Morris; T.E. Whall; E.H.C. Parker; D.R. Leadley

doi:10.1063/1.3579524

Strain dependence of electron-phonon energy loss rate in many-valley semiconductors

Juha T. Muhonen^*
, M.J. Prest
, Mika Prunnila
, David Gunnarsson
, V.A. Shah
, A. Dobbie
, M. Myronov
, R.J.H. Morris
, T.E. Whall
, E.H.C. Parker
, D.R. Leadley

^*Corresponding author for this work

Research output: Contribution to journal › Article › Scientific › peer-review

18 Citations (Scopus)

Abstract

We demonstrate significant modification of the electron-phonon energy loss rate in a many-valley semiconductor system due to lattice mismatch induced strain. We show that the thermal conductance from the electron system to the phonon bath in strained n⁺Si, at phonon temperatures between 200 and 480 mK, is more than an order of magnitude lower than that for a similar unstrained sample.

Original language	English
Article number	182103
Number of pages	3
Journal	Applied Physics Letters
Volume	98
Issue number	18
DOIs	https://doi.org/10.1063/1.3579524
Publication status	Published - 2011
MoE publication type	A1 Journal article-refereed

Keywords

electron-phonon interactions
elemental semiconductors
silicon
thermal conductivity

Access to Document

10.1063/1.3579524

https://arxiv.org/abs/1101.5889

Cite this

@article{37c1e6b1895f492db837010019040131,

title = "Strain dependence of electron-phonon energy loss rate in many-valley semiconductors",

abstract = "We demonstrate significant modification of the electron-phonon energy loss rate in a many-valley semiconductor system due to lattice mismatch induced strain. We show that the thermal conductance from the electron system to the phonon bath in strained n+Si, at phonon temperatures between 200 and 480 mK, is more than an order of magnitude lower than that for a similar unstrained sample.",

keywords = "electron-phonon interactions, elemental semiconductors, silicon, thermal conductivity",

author = "Muhonen, \{Juha T.\} and M.J. Prest and Mika Prunnila and David Gunnarsson and V.A. Shah and A. Dobbie and M. Myronov and R.J.H. Morris and T.E. Whall and E.H.C. Parker and D.R. Leadley",

year = "2011",

doi = "10.1063/1.3579524",

language = "English",

volume = "98",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics (AIP)",

number = "18",

}

TY - JOUR

T1 - Strain dependence of electron-phonon energy loss rate in many-valley semiconductors

AU - Muhonen, Juha T.

AU - Prest, M.J.

AU - Prunnila, Mika

AU - Gunnarsson, David

AU - Shah, V.A.

AU - Dobbie, A.

AU - Myronov, M.

AU - Morris, R.J.H.

AU - Whall, T.E.

AU - Parker, E.H.C.

AU - Leadley, D.R.

PY - 2011

Y1 - 2011

N2 - We demonstrate significant modification of the electron-phonon energy loss rate in a many-valley semiconductor system due to lattice mismatch induced strain. We show that the thermal conductance from the electron system to the phonon bath in strained n+Si, at phonon temperatures between 200 and 480 mK, is more than an order of magnitude lower than that for a similar unstrained sample.

AB - We demonstrate significant modification of the electron-phonon energy loss rate in a many-valley semiconductor system due to lattice mismatch induced strain. We show that the thermal conductance from the electron system to the phonon bath in strained n+Si, at phonon temperatures between 200 and 480 mK, is more than an order of magnitude lower than that for a similar unstrained sample.

KW - electron-phonon interactions

KW - elemental semiconductors

KW - silicon

KW - thermal conductivity

U2 - 10.1063/1.3579524

DO - 10.1063/1.3579524

M3 - Article

SN - 0003-6951

VL - 98

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 18

M1 - 182103

ER -

Strain dependence of electron-phonon energy loss rate in many-valley semiconductors

Abstract

Keywords

Access to Document

Fingerprint

Cite this