Abstract
Enhanced electron cooling is demonstrated in a strained-silicon/superconductor tunnel junction refrigerator of volume 40 μm3. The electron temperature is reduced from 300 mK to 174 mK, with the enhancement over an unstrained silicon
control (300 mK–258 mK) being attributed to the smaller electron-phonon
coupling in the strained case. Modeling and the resulting predictions
of silicon-based cooler performance are presented. Further reductions in
the minimum temperature are expected if the junction
sub-gap leakage and tunnel resistance can be reduced. However, if only
tunnel resistance is reduced, Joule heating is predicted to dominate.
Original language | English |
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Article number | 251908 |
Number of pages | 4 |
Journal | Applied Physics Letters |
Volume | 99 |
Issue number | 25 |
DOIs | |
Publication status | Published - 2011 |
MoE publication type | A1 Journal article-refereed |
Keywords
- Cooling
- degenerate semiconductors
- electronphonon interactions
- elemental semiconductors
- refrigerators
- silicon
- superconducting junction devices
- superconductor-semiconductor boundaries