Strain enhanced electron cooling in a degenerately doped semiconductor

M. J. Prest (Corresponding Author), J. T. Muhonen, Mika Prunnila, D. Gunnarsson, V.A. Shah, J.S. Richardson-Bullock, A. Dobbie, M. Myronov, R.J.H. Morris, T.E. Whall, E.H.C. Parker, D.R. Leadley

    Research output: Contribution to journalArticleScientificpeer-review

    12 Citations (Scopus)

    Abstract

    Enhanced electron cooling is demonstrated in a strained-silicon/superconductor tunnel junction refrigerator of volume 40 μm3. The electron temperature is reduced from 300 mK to 174 mK, with the enhancement over an unstrained silicon control (300 mK–258 mK) being attributed to the smaller electron-phonon coupling in the strained case. Modeling and the resulting predictions of silicon-based cooler performance are presented. Further reductions in the minimum temperature are expected if the junction sub-gap leakage and tunnel resistance can be reduced. However, if only tunnel resistance is reduced, Joule heating is predicted to dominate.
    Original languageEnglish
    Article number251908
    Number of pages4
    JournalApplied Physics Letters
    Volume99
    Issue number25
    DOIs
    Publication statusPublished - 2011
    MoE publication typeA1 Journal article-refereed

    Fingerprint

    cooling
    tunnels
    silicon
    electrons
    Joule heating
    refrigerators
    coolers
    tunnel junctions
    leakage
    electron energy
    augmentation
    predictions
    temperature

    Keywords

    • Cooling
    • degenerate semiconductors
    • electronphonon interactions
    • elemental semiconductors
    • refrigerators
    • silicon
    • superconducting junction devices
    • superconductor-semiconductor boundaries

    Cite this

    Prest, M. J., Muhonen, J. T., Prunnila, M., Gunnarsson, D., Shah, V. A., Richardson-Bullock, J. S., ... Leadley, D. R. (2011). Strain enhanced electron cooling in a degenerately doped semiconductor. Applied Physics Letters, 99(25), [251908]. https://doi.org/10.1063/1.3670330
    Prest, M. J. ; Muhonen, J. T. ; Prunnila, Mika ; Gunnarsson, D. ; Shah, V.A. ; Richardson-Bullock, J.S. ; Dobbie, A. ; Myronov, M. ; Morris, R.J.H. ; Whall, T.E. ; Parker, E.H.C. ; Leadley, D.R. / Strain enhanced electron cooling in a degenerately doped semiconductor. In: Applied Physics Letters. 2011 ; Vol. 99, No. 25.
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    title = "Strain enhanced electron cooling in a degenerately doped semiconductor",
    abstract = "Enhanced electron cooling is demonstrated in a strained-silicon/superconductor tunnel junction refrigerator of volume 40 μm3. The electron temperature is reduced from 300 mK to 174 mK, with the enhancement over an unstrained silicon control (300 mK–258 mK) being attributed to the smaller electron-phonon coupling in the strained case. Modeling and the resulting predictions of silicon-based cooler performance are presented. Further reductions in the minimum temperature are expected if the junction sub-gap leakage and tunnel resistance can be reduced. However, if only tunnel resistance is reduced, Joule heating is predicted to dominate.",
    keywords = "Cooling, degenerate semiconductors, electronphonon interactions, elemental semiconductors, refrigerators, silicon, superconducting junction devices, superconductor-semiconductor boundaries",
    author = "Prest, {M. J.} and Muhonen, {J. T.} and Mika Prunnila and D. Gunnarsson and V.A. Shah and J.S. Richardson-Bullock and A. Dobbie and M. Myronov and R.J.H. Morris and T.E. Whall and E.H.C. Parker and D.R. Leadley",
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    Prest, MJ, Muhonen, JT, Prunnila, M, Gunnarsson, D, Shah, VA, Richardson-Bullock, JS, Dobbie, A, Myronov, M, Morris, RJH, Whall, TE, Parker, EHC & Leadley, DR 2011, 'Strain enhanced electron cooling in a degenerately doped semiconductor', Applied Physics Letters, vol. 99, no. 25, 251908. https://doi.org/10.1063/1.3670330

    Strain enhanced electron cooling in a degenerately doped semiconductor. / Prest, M. J. (Corresponding Author); Muhonen, J. T.; Prunnila, Mika; Gunnarsson, D.; Shah, V.A.; Richardson-Bullock, J.S.; Dobbie, A.; Myronov, M.; Morris, R.J.H.; Whall, T.E.; Parker, E.H.C.; Leadley, D.R.

    In: Applied Physics Letters, Vol. 99, No. 25, 251908, 2011.

    Research output: Contribution to journalArticleScientificpeer-review

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    T1 - Strain enhanced electron cooling in a degenerately doped semiconductor

    AU - Prest, M. J.

    AU - Muhonen, J. T.

    AU - Prunnila, Mika

    AU - Gunnarsson, D.

    AU - Shah, V.A.

    AU - Richardson-Bullock, J.S.

    AU - Dobbie, A.

    AU - Myronov, M.

    AU - Morris, R.J.H.

    AU - Whall, T.E.

    AU - Parker, E.H.C.

    AU - Leadley, D.R.

    PY - 2011

    Y1 - 2011

    N2 - Enhanced electron cooling is demonstrated in a strained-silicon/superconductor tunnel junction refrigerator of volume 40 μm3. The electron temperature is reduced from 300 mK to 174 mK, with the enhancement over an unstrained silicon control (300 mK–258 mK) being attributed to the smaller electron-phonon coupling in the strained case. Modeling and the resulting predictions of silicon-based cooler performance are presented. Further reductions in the minimum temperature are expected if the junction sub-gap leakage and tunnel resistance can be reduced. However, if only tunnel resistance is reduced, Joule heating is predicted to dominate.

    AB - Enhanced electron cooling is demonstrated in a strained-silicon/superconductor tunnel junction refrigerator of volume 40 μm3. The electron temperature is reduced from 300 mK to 174 mK, with the enhancement over an unstrained silicon control (300 mK–258 mK) being attributed to the smaller electron-phonon coupling in the strained case. Modeling and the resulting predictions of silicon-based cooler performance are presented. Further reductions in the minimum temperature are expected if the junction sub-gap leakage and tunnel resistance can be reduced. However, if only tunnel resistance is reduced, Joule heating is predicted to dominate.

    KW - Cooling

    KW - degenerate semiconductors

    KW - electronphonon interactions

    KW - elemental semiconductors

    KW - refrigerators

    KW - silicon

    KW - superconducting junction devices

    KW - superconductor-semiconductor boundaries

    U2 - 10.1063/1.3670330

    DO - 10.1063/1.3670330

    M3 - Article

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    JO - Applied Physics Letters

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    Prest MJ, Muhonen JT, Prunnila M, Gunnarsson D, Shah VA, Richardson-Bullock JS et al. Strain enhanced electron cooling in a degenerately doped semiconductor. Applied Physics Letters. 2011;99(25). 251908. https://doi.org/10.1063/1.3670330