Strain enhanced electron cooling in a degenerately doped semiconductor

M. J. Prest; J. T. Muhonen; Mika Prunnila; D. Gunnarsson; V.A. Shah; J.S. Richardson-Bullock; A. Dobbie; M. Myronov; R.J.H. Morris; T.E. Whall; E.H.C. Parker; D.R. Leadley

doi:10.1063/1.3670330

Strain enhanced electron cooling in a degenerately doped semiconductor

M. J. Prest (Corresponding Author), J. T. Muhonen, Mika Prunnila, D. Gunnarsson, V.A. Shah, J.S. Richardson-Bullock, A. Dobbie, M. Myronov, R.J.H. Morris, T.E. Whall, E.H.C. Parker, D.R. Leadley

Research output: Contribution to journal › Article › Scientific › peer-review

12 Citations (Scopus)

Abstract

Enhanced electron cooling is demonstrated in a strained-silicon/superconductor tunnel junction refrigerator of volume 40 μm³. The electron temperature is reduced from 300 mK to 174 mK, with the enhancement over an unstrained silicon control (300 mK–258 mK) being attributed to the smaller electron-phonon coupling in the strained case. Modeling and the resulting predictions of silicon-based cooler performance are presented. Further reductions in the minimum temperature are expected if the junction sub-gap leakage and tunnel resistance can be reduced. However, if only tunnel resistance is reduced, Joule heating is predicted to dominate.

Original language	English
Article number	251908
Number of pages	4
Journal	Applied Physics Letters
Volume	99
Issue number	25
DOIs	https://doi.org/10.1063/1.3670330
Publication status	Published - 2011
MoE publication type	A1 Journal article-refereed

Keywords

Cooling
degenerate semiconductors
electronphonon interactions
elemental semiconductors
refrigerators
silicon
superconducting junction devices
superconductor-semiconductor boundaries

Access to Document

10.1063/1.3670330

Cite this

@article{cbba3774235247adb98d4ec818c58934,

title = "Strain enhanced electron cooling in a degenerately doped semiconductor",

abstract = "Enhanced electron cooling is demonstrated in a strained-silicon/superconductor tunnel junction refrigerator of volume 40 μm3. The electron temperature is reduced from 300 mK to 174 mK, with the enhancement over an unstrained silicon control (300 mK–258 mK) being attributed to the smaller electron-phonon coupling in the strained case. Modeling and the resulting predictions of silicon-based cooler performance are presented. Further reductions in the minimum temperature are expected if the junction sub-gap leakage and tunnel resistance can be reduced. However, if only tunnel resistance is reduced, Joule heating is predicted to dominate.",

keywords = "Cooling, degenerate semiconductors, electronphonon interactions, elemental semiconductors, refrigerators, silicon, superconducting junction devices, superconductor-semiconductor boundaries",

author = "Prest, {M. J.} and Muhonen, {J. T.} and Mika Prunnila and D. Gunnarsson and V.A. Shah and J.S. Richardson-Bullock and A. Dobbie and M. Myronov and R.J.H. Morris and T.E. Whall and E.H.C. Parker and D.R. Leadley",

year = "2011",

doi = "10.1063/1.3670330",

language = "English",

volume = "99",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics (AIP)",

number = "25",

}

Strain enhanced electron cooling in a degenerately doped semiconductor. / Prest, M. J. (Corresponding Author); Muhonen, J. T.; Prunnila, Mika; Gunnarsson, D.; Shah, V.A.; Richardson-Bullock, J.S.; Dobbie, A.; Myronov, M.; Morris, R.J.H.; Whall, T.E.; Parker, E.H.C.; Leadley, D.R.

In: Applied Physics Letters, Vol. 99, No. 25, 251908, 2011.

Research output: Contribution to journal › Article › Scientific › peer-review

TY - JOUR

T1 - Strain enhanced electron cooling in a degenerately doped semiconductor

AU - Prest, M. J.

AU - Muhonen, J. T.

AU - Prunnila, Mika

AU - Gunnarsson, D.

AU - Shah, V.A.

AU - Richardson-Bullock, J.S.

AU - Dobbie, A.

AU - Myronov, M.

AU - Morris, R.J.H.

AU - Whall, T.E.

AU - Parker, E.H.C.

AU - Leadley, D.R.

PY - 2011

Y1 - 2011

N2 - Enhanced electron cooling is demonstrated in a strained-silicon/superconductor tunnel junction refrigerator of volume 40 μm3. The electron temperature is reduced from 300 mK to 174 mK, with the enhancement over an unstrained silicon control (300 mK–258 mK) being attributed to the smaller electron-phonon coupling in the strained case. Modeling and the resulting predictions of silicon-based cooler performance are presented. Further reductions in the minimum temperature are expected if the junction sub-gap leakage and tunnel resistance can be reduced. However, if only tunnel resistance is reduced, Joule heating is predicted to dominate.

AB - Enhanced electron cooling is demonstrated in a strained-silicon/superconductor tunnel junction refrigerator of volume 40 μm3. The electron temperature is reduced from 300 mK to 174 mK, with the enhancement over an unstrained silicon control (300 mK–258 mK) being attributed to the smaller electron-phonon coupling in the strained case. Modeling and the resulting predictions of silicon-based cooler performance are presented. Further reductions in the minimum temperature are expected if the junction sub-gap leakage and tunnel resistance can be reduced. However, if only tunnel resistance is reduced, Joule heating is predicted to dominate.

KW - Cooling

KW - degenerate semiconductors

KW - electronphonon interactions

KW - elemental semiconductors

KW - refrigerators

KW - silicon

KW - superconducting junction devices

KW - superconductor-semiconductor boundaries

U2 - 10.1063/1.3670330

DO - 10.1063/1.3670330

M3 - Article

VL - 99

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 25

M1 - 251908

ER -

Strain enhanced electron cooling in a degenerately doped semiconductor

Abstract

Keywords

Access to Document

Fingerprint

Cite this