Abstract
| Original language | English |
|---|---|
| Article number | 251908 |
| Number of pages | 4 |
| Journal | Applied Physics Letters |
| Volume | 99 |
| Issue number | 25 |
| DOIs | |
| Publication status | Published - 2011 |
| MoE publication type | A1 Journal article-refereed |
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Keywords
- Cooling
- degenerate semiconductors
- electronphonon interactions
- elemental semiconductors
- refrigerators
- silicon
- superconducting junction devices
- superconductor-semiconductor boundaries
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Strain enhanced electron cooling in a degenerately doped semiconductor. / Prest, M. J. (Corresponding Author); Muhonen, J. T.; Prunnila, Mika; Gunnarsson, D.; Shah, V.A.; Richardson-Bullock, J.S.; Dobbie, A.; Myronov, M.; Morris, R.J.H.; Whall, T.E.; Parker, E.H.C.; Leadley, D.R.
In: Applied Physics Letters, Vol. 99, No. 25, 251908, 2011.Research output: Contribution to journal › Article › Scientific › peer-review
TY - JOUR
T1 - Strain enhanced electron cooling in a degenerately doped semiconductor
AU - Prest, M. J.
AU - Muhonen, J. T.
AU - Prunnila, Mika
AU - Gunnarsson, D.
AU - Shah, V.A.
AU - Richardson-Bullock, J.S.
AU - Dobbie, A.
AU - Myronov, M.
AU - Morris, R.J.H.
AU - Whall, T.E.
AU - Parker, E.H.C.
AU - Leadley, D.R.
PY - 2011
Y1 - 2011
N2 - Enhanced electron cooling is demonstrated in a strained-silicon/superconductor tunnel junction refrigerator of volume 40 μm3. The electron temperature is reduced from 300 mK to 174 mK, with the enhancement over an unstrained silicon control (300 mK–258 mK) being attributed to the smaller electron-phonon coupling in the strained case. Modeling and the resulting predictions of silicon-based cooler performance are presented. Further reductions in the minimum temperature are expected if the junction sub-gap leakage and tunnel resistance can be reduced. However, if only tunnel resistance is reduced, Joule heating is predicted to dominate.
AB - Enhanced electron cooling is demonstrated in a strained-silicon/superconductor tunnel junction refrigerator of volume 40 μm3. The electron temperature is reduced from 300 mK to 174 mK, with the enhancement over an unstrained silicon control (300 mK–258 mK) being attributed to the smaller electron-phonon coupling in the strained case. Modeling and the resulting predictions of silicon-based cooler performance are presented. Further reductions in the minimum temperature are expected if the junction sub-gap leakage and tunnel resistance can be reduced. However, if only tunnel resistance is reduced, Joule heating is predicted to dominate.
KW - Cooling
KW - degenerate semiconductors
KW - electronphonon interactions
KW - elemental semiconductors
KW - refrigerators
KW - silicon
KW - superconducting junction devices
KW - superconductor-semiconductor boundaries
U2 - 10.1063/1.3670330
DO - 10.1063/1.3670330
M3 - Article
VL - 99
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 25
M1 - 251908
ER -