Strain enhanced electron cooling in a degenerately doped semiconductor

M. J. Prest (Corresponding Author), J. T. Muhonen, Mika Prunnila, D. Gunnarsson, V.A. Shah, J.S. Richardson-Bullock, A. Dobbie, M. Myronov, R.J.H. Morris, T.E. Whall, E.H.C. Parker, D.R. Leadley

Research output: Contribution to journalArticleScientificpeer-review

12 Citations (Scopus)

Abstract

Enhanced electron cooling is demonstrated in a strained-silicon/superconductor tunnel junction refrigerator of volume 40 μm3. The electron temperature is reduced from 300 mK to 174 mK, with the enhancement over an unstrained silicon control (300 mK–258 mK) being attributed to the smaller electron-phonon coupling in the strained case. Modeling and the resulting predictions of silicon-based cooler performance are presented. Further reductions in the minimum temperature are expected if the junction sub-gap leakage and tunnel resistance can be reduced. However, if only tunnel resistance is reduced, Joule heating is predicted to dominate.
Original languageEnglish
Article number251908
Number of pages4
JournalApplied Physics Letters
Volume99
Issue number25
DOIs
Publication statusPublished - 2011
MoE publication typeA1 Journal article-refereed

Fingerprint

cooling
tunnels
silicon
electrons
Joule heating
refrigerators
coolers
tunnel junctions
leakage
electron energy
augmentation
predictions
temperature

Keywords

  • Cooling
  • degenerate semiconductors
  • electronphonon interactions
  • elemental semiconductors
  • refrigerators
  • silicon
  • superconducting junction devices
  • superconductor-semiconductor boundaries

Cite this

Prest, M. J., Muhonen, J. T., Prunnila, M., Gunnarsson, D., Shah, V. A., Richardson-Bullock, J. S., ... Leadley, D. R. (2011). Strain enhanced electron cooling in a degenerately doped semiconductor. Applied Physics Letters, 99(25), [251908]. https://doi.org/10.1063/1.3670330
Prest, M. J. ; Muhonen, J. T. ; Prunnila, Mika ; Gunnarsson, D. ; Shah, V.A. ; Richardson-Bullock, J.S. ; Dobbie, A. ; Myronov, M. ; Morris, R.J.H. ; Whall, T.E. ; Parker, E.H.C. ; Leadley, D.R. / Strain enhanced electron cooling in a degenerately doped semiconductor. In: Applied Physics Letters. 2011 ; Vol. 99, No. 25.
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abstract = "Enhanced electron cooling is demonstrated in a strained-silicon/superconductor tunnel junction refrigerator of volume 40 μm3. The electron temperature is reduced from 300 mK to 174 mK, with the enhancement over an unstrained silicon control (300 mK–258 mK) being attributed to the smaller electron-phonon coupling in the strained case. Modeling and the resulting predictions of silicon-based cooler performance are presented. Further reductions in the minimum temperature are expected if the junction sub-gap leakage and tunnel resistance can be reduced. However, if only tunnel resistance is reduced, Joule heating is predicted to dominate.",
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Prest, MJ, Muhonen, JT, Prunnila, M, Gunnarsson, D, Shah, VA, Richardson-Bullock, JS, Dobbie, A, Myronov, M, Morris, RJH, Whall, TE, Parker, EHC & Leadley, DR 2011, 'Strain enhanced electron cooling in a degenerately doped semiconductor', Applied Physics Letters, vol. 99, no. 25, 251908. https://doi.org/10.1063/1.3670330

Strain enhanced electron cooling in a degenerately doped semiconductor. / Prest, M. J. (Corresponding Author); Muhonen, J. T.; Prunnila, Mika; Gunnarsson, D.; Shah, V.A.; Richardson-Bullock, J.S.; Dobbie, A.; Myronov, M.; Morris, R.J.H.; Whall, T.E.; Parker, E.H.C.; Leadley, D.R.

In: Applied Physics Letters, Vol. 99, No. 25, 251908, 2011.

Research output: Contribution to journalArticleScientificpeer-review

TY - JOUR

T1 - Strain enhanced electron cooling in a degenerately doped semiconductor

AU - Prest, M. J.

AU - Muhonen, J. T.

AU - Prunnila, Mika

AU - Gunnarsson, D.

AU - Shah, V.A.

AU - Richardson-Bullock, J.S.

AU - Dobbie, A.

AU - Myronov, M.

AU - Morris, R.J.H.

AU - Whall, T.E.

AU - Parker, E.H.C.

AU - Leadley, D.R.

PY - 2011

Y1 - 2011

N2 - Enhanced electron cooling is demonstrated in a strained-silicon/superconductor tunnel junction refrigerator of volume 40 μm3. The electron temperature is reduced from 300 mK to 174 mK, with the enhancement over an unstrained silicon control (300 mK–258 mK) being attributed to the smaller electron-phonon coupling in the strained case. Modeling and the resulting predictions of silicon-based cooler performance are presented. Further reductions in the minimum temperature are expected if the junction sub-gap leakage and tunnel resistance can be reduced. However, if only tunnel resistance is reduced, Joule heating is predicted to dominate.

AB - Enhanced electron cooling is demonstrated in a strained-silicon/superconductor tunnel junction refrigerator of volume 40 μm3. The electron temperature is reduced from 300 mK to 174 mK, with the enhancement over an unstrained silicon control (300 mK–258 mK) being attributed to the smaller electron-phonon coupling in the strained case. Modeling and the resulting predictions of silicon-based cooler performance are presented. Further reductions in the minimum temperature are expected if the junction sub-gap leakage and tunnel resistance can be reduced. However, if only tunnel resistance is reduced, Joule heating is predicted to dominate.

KW - Cooling

KW - degenerate semiconductors

KW - electronphonon interactions

KW - elemental semiconductors

KW - refrigerators

KW - silicon

KW - superconducting junction devices

KW - superconductor-semiconductor boundaries

U2 - 10.1063/1.3670330

DO - 10.1063/1.3670330

M3 - Article

VL - 99

JO - Applied Physics Letters

JF - Applied Physics Letters

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Prest MJ, Muhonen JT, Prunnila M, Gunnarsson D, Shah VA, Richardson-Bullock JS et al. Strain enhanced electron cooling in a degenerately doped semiconductor. Applied Physics Letters. 2011;99(25). 251908. https://doi.org/10.1063/1.3670330