Strain enhanced electron cooling in a degenerately doped semiconductor

M. J. Prest (Corresponding Author), J. T. Muhonen, Mika Prunnila, D. Gunnarsson, V.A. Shah, J.S. Richardson-Bullock, A. Dobbie, M. Myronov, R.J.H. Morris, T.E. Whall, E.H.C. Parker, D.R. Leadley

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    12 Citations (Scopus)

    Abstract

    Enhanced electron cooling is demonstrated in a strained-silicon/superconductor tunnel junction refrigerator of volume 40 μm3. The electron temperature is reduced from 300 mK to 174 mK, with the enhancement over an unstrained silicon control (300 mK–258 mK) being attributed to the smaller electron-phonon coupling in the strained case. Modeling and the resulting predictions of silicon-based cooler performance are presented. Further reductions in the minimum temperature are expected if the junction sub-gap leakage and tunnel resistance can be reduced. However, if only tunnel resistance is reduced, Joule heating is predicted to dominate.
    Original languageEnglish
    Article number251908
    Number of pages4
    JournalApplied Physics Letters
    Volume99
    Issue number25
    DOIs
    Publication statusPublished - 2011
    MoE publication typeA1 Journal article-refereed

    Keywords

    • Cooling
    • degenerate semiconductors
    • electronphonon interactions
    • elemental semiconductors
    • refrigerators
    • silicon
    • superconducting junction devices
    • superconductor-semiconductor boundaries

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  • Cite this

    Prest, M. J., Muhonen, J. T., Prunnila, M., Gunnarsson, D., Shah, V. A., Richardson-Bullock, J. S., Dobbie, A., Myronov, M., Morris, R. J. H., Whall, T. E., Parker, E. H. C., & Leadley, D. R. (2011). Strain enhanced electron cooling in a degenerately doped semiconductor. Applied Physics Letters, 99(25), [251908]. https://doi.org/10.1063/1.3670330