Strain-induced quantum dot superlattice

Markku Sopanen (Corresponding Author), Harri Lipsanen, J Tulkki, Jouni Ahopelto

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    Abstract

    Coupled double quantum dots and quantum dot superlattices are formed by utilizing the strain of an InP island on top of a near-surface multi-quantum-well structure.
    The number and composition of the quantum wells together with the thickness of the barrier separating the quantum wells are varied to investigate the coupling of the wave functions of the carriers confined in separate vertically stacked dots.
    Photoluminescence studies show that the reduction of the barrier thickness and the increase of the number of wells enhance the coupling, which is observed as red shift and narrowing of the quantum dot peak.
    The calculated shifts of the peak positions agree closely with the experimental values.
    Original languageEnglish
    Pages (from-to)19-22
    JournalPhysica E: Low-Dimensional Systems and Nanostructures
    Volume2
    Issue number1-4
    DOIs
    Publication statusPublished - 1998
    MoE publication typeA1 Journal article-refereed

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