Strain-induced quantum dot superlattice

Markku Sopanen (Corresponding Author), Harri Lipsanen, J Tulkki, Jouni Ahopelto

Research output: Contribution to journalArticleScientificpeer-review

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Abstract

Coupled double quantum dots and quantum dot superlattices are formed by utilizing the strain of an InP island on top of a near-surface multi-quantum-well structure.
The number and composition of the quantum wells together with the thickness of the barrier separating the quantum wells are varied to investigate the coupling of the wave functions of the carriers confined in separate vertically stacked dots.
Photoluminescence studies show that the reduction of the barrier thickness and the increase of the number of wells enhance the coupling, which is observed as red shift and narrowing of the quantum dot peak.
The calculated shifts of the peak positions agree closely with the experimental values.
Original languageEnglish
Pages (from-to)19-22
JournalPhysica E: Low-Dimensional Systems and Nanostructures
Volume2
Issue number1-4
DOIs
Publication statusPublished - 1998
MoE publication typeA1 Journal article-refereed

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Semiconductor quantum wells
Semiconductor quantum dots
quantum dots
quantum wells
Superlattices
Wave functions
red shift
superlattices
Photoluminescence
wave functions
photoluminescence
shift
Chemical analysis

Cite this

Sopanen, Markku ; Lipsanen, Harri ; Tulkki, J ; Ahopelto, Jouni. / Strain-induced quantum dot superlattice. In: Physica E: Low-Dimensional Systems and Nanostructures. 1998 ; Vol. 2, No. 1-4. pp. 19-22.
@article{b900482c93aa4c06b3190902b46fb461,
title = "Strain-induced quantum dot superlattice",
abstract = "Coupled double quantum dots and quantum dot superlattices are formed by utilizing the strain of an InP island on top of a near-surface multi-quantum-well structure. The number and composition of the quantum wells together with the thickness of the barrier separating the quantum wells are varied to investigate the coupling of the wave functions of the carriers confined in separate vertically stacked dots. Photoluminescence studies show that the reduction of the barrier thickness and the increase of the number of wells enhance the coupling, which is observed as red shift and narrowing of the quantum dot peak. The calculated shifts of the peak positions agree closely with the experimental values.",
author = "Markku Sopanen and Harri Lipsanen and J Tulkki and Jouni Ahopelto",
year = "1998",
doi = "10.1016/S1386-9477(98)00007-1",
language = "English",
volume = "2",
pages = "19--22",
journal = "Physica E: Low-Dimensional Systems and Nanostructures",
issn = "1386-9477",
publisher = "Elsevier",
number = "1-4",

}

Strain-induced quantum dot superlattice. / Sopanen, Markku (Corresponding Author); Lipsanen, Harri; Tulkki, J; Ahopelto, Jouni.

In: Physica E: Low-Dimensional Systems and Nanostructures, Vol. 2, No. 1-4, 1998, p. 19-22.

Research output: Contribution to journalArticleScientificpeer-review

TY - JOUR

T1 - Strain-induced quantum dot superlattice

AU - Sopanen, Markku

AU - Lipsanen, Harri

AU - Tulkki, J

AU - Ahopelto, Jouni

PY - 1998

Y1 - 1998

N2 - Coupled double quantum dots and quantum dot superlattices are formed by utilizing the strain of an InP island on top of a near-surface multi-quantum-well structure. The number and composition of the quantum wells together with the thickness of the barrier separating the quantum wells are varied to investigate the coupling of the wave functions of the carriers confined in separate vertically stacked dots. Photoluminescence studies show that the reduction of the barrier thickness and the increase of the number of wells enhance the coupling, which is observed as red shift and narrowing of the quantum dot peak. The calculated shifts of the peak positions agree closely with the experimental values.

AB - Coupled double quantum dots and quantum dot superlattices are formed by utilizing the strain of an InP island on top of a near-surface multi-quantum-well structure. The number and composition of the quantum wells together with the thickness of the barrier separating the quantum wells are varied to investigate the coupling of the wave functions of the carriers confined in separate vertically stacked dots. Photoluminescence studies show that the reduction of the barrier thickness and the increase of the number of wells enhance the coupling, which is observed as red shift and narrowing of the quantum dot peak. The calculated shifts of the peak positions agree closely with the experimental values.

U2 - 10.1016/S1386-9477(98)00007-1

DO - 10.1016/S1386-9477(98)00007-1

M3 - Article

VL - 2

SP - 19

EP - 22

JO - Physica E: Low-Dimensional Systems and Nanostructures

JF - Physica E: Low-Dimensional Systems and Nanostructures

SN - 1386-9477

IS - 1-4

ER -