Strain-induced quantum dot superlattice

Markku Sopanen (Corresponding Author), Harri Lipsanen, J Tulkki, Jouni Ahopelto

    Research output: Contribution to journalArticleScientificpeer-review

    5 Citations (Scopus)

    Abstract

    Coupled double quantum dots and quantum dot superlattices are formed by utilizing the strain of an InP island on top of a near-surface multi-quantum-well structure.
    The number and composition of the quantum wells together with the thickness of the barrier separating the quantum wells are varied to investigate the coupling of the wave functions of the carriers confined in separate vertically stacked dots.
    Photoluminescence studies show that the reduction of the barrier thickness and the increase of the number of wells enhance the coupling, which is observed as red shift and narrowing of the quantum dot peak.
    The calculated shifts of the peak positions agree closely with the experimental values.
    Original languageEnglish
    Pages (from-to)19-22
    JournalPhysica E: Low-Dimensional Systems and Nanostructures
    Volume2
    Issue number1-4
    DOIs
    Publication statusPublished - 1998
    MoE publication typeA1 Journal article-refereed

    Fingerprint

    Semiconductor quantum wells
    Semiconductor quantum dots
    quantum dots
    quantum wells
    Superlattices
    Wave functions
    red shift
    superlattices
    Photoluminescence
    wave functions
    photoluminescence
    shift
    Chemical analysis

    Cite this

    Sopanen, Markku ; Lipsanen, Harri ; Tulkki, J ; Ahopelto, Jouni. / Strain-induced quantum dot superlattice. In: Physica E: Low-Dimensional Systems and Nanostructures. 1998 ; Vol. 2, No. 1-4. pp. 19-22.
    @article{b900482c93aa4c06b3190902b46fb461,
    title = "Strain-induced quantum dot superlattice",
    abstract = "Coupled double quantum dots and quantum dot superlattices are formed by utilizing the strain of an InP island on top of a near-surface multi-quantum-well structure. The number and composition of the quantum wells together with the thickness of the barrier separating the quantum wells are varied to investigate the coupling of the wave functions of the carriers confined in separate vertically stacked dots. Photoluminescence studies show that the reduction of the barrier thickness and the increase of the number of wells enhance the coupling, which is observed as red shift and narrowing of the quantum dot peak. The calculated shifts of the peak positions agree closely with the experimental values.",
    author = "Markku Sopanen and Harri Lipsanen and J Tulkki and Jouni Ahopelto",
    year = "1998",
    doi = "10.1016/S1386-9477(98)00007-1",
    language = "English",
    volume = "2",
    pages = "19--22",
    journal = "Physica E: Low-Dimensional Systems and Nanostructures",
    issn = "1386-9477",
    publisher = "Elsevier",
    number = "1-4",

    }

    Strain-induced quantum dot superlattice. / Sopanen, Markku (Corresponding Author); Lipsanen, Harri; Tulkki, J; Ahopelto, Jouni.

    In: Physica E: Low-Dimensional Systems and Nanostructures, Vol. 2, No. 1-4, 1998, p. 19-22.

    Research output: Contribution to journalArticleScientificpeer-review

    TY - JOUR

    T1 - Strain-induced quantum dot superlattice

    AU - Sopanen, Markku

    AU - Lipsanen, Harri

    AU - Tulkki, J

    AU - Ahopelto, Jouni

    PY - 1998

    Y1 - 1998

    N2 - Coupled double quantum dots and quantum dot superlattices are formed by utilizing the strain of an InP island on top of a near-surface multi-quantum-well structure. The number and composition of the quantum wells together with the thickness of the barrier separating the quantum wells are varied to investigate the coupling of the wave functions of the carriers confined in separate vertically stacked dots. Photoluminescence studies show that the reduction of the barrier thickness and the increase of the number of wells enhance the coupling, which is observed as red shift and narrowing of the quantum dot peak. The calculated shifts of the peak positions agree closely with the experimental values.

    AB - Coupled double quantum dots and quantum dot superlattices are formed by utilizing the strain of an InP island on top of a near-surface multi-quantum-well structure. The number and composition of the quantum wells together with the thickness of the barrier separating the quantum wells are varied to investigate the coupling of the wave functions of the carriers confined in separate vertically stacked dots. Photoluminescence studies show that the reduction of the barrier thickness and the increase of the number of wells enhance the coupling, which is observed as red shift and narrowing of the quantum dot peak. The calculated shifts of the peak positions agree closely with the experimental values.

    U2 - 10.1016/S1386-9477(98)00007-1

    DO - 10.1016/S1386-9477(98)00007-1

    M3 - Article

    VL - 2

    SP - 19

    EP - 22

    JO - Physica E: Low-Dimensional Systems and Nanostructures

    JF - Physica E: Low-Dimensional Systems and Nanostructures

    SN - 1386-9477

    IS - 1-4

    ER -