Strain-induced quantum dots by self-organized stressors

Markku Sopanen, Harri Lipsanen, Jouni Ahopelto

Research output: Contribution to journalArticleScientificpeer-review

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Abstract

Novel in situ method to produce quantum dots is reported. Three‐dimensional confinement of carriers to a GaInAs/GaAs quantum well dots is observed by photoluminescence. The confinement potential is induced by stressors, formed by self‐organizing growth of InP nanoscale islands on top barrier GaAs surface. Two transitions arising from the strain‐induced quantum dots produced by two types of InP islands are identified. The luminescence from higher electronic states of the quantum dots having a level splitting of 8 meV is also observed.
Original languageEnglish
Pages (from-to)2364-2366
JournalApplied Physics Letters
Volume66
Issue number18
DOIs
Publication statusPublished - 1995
MoE publication typeA1 Journal article-refereed

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quantum dots
quantum wells
luminescence
photoluminescence
electronics

Cite this

Sopanen, Markku ; Lipsanen, Harri ; Ahopelto, Jouni. / Strain-induced quantum dots by self-organized stressors. In: Applied Physics Letters. 1995 ; Vol. 66, No. 18. pp. 2364-2366.
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Strain-induced quantum dots by self-organized stressors. / Sopanen, Markku; Lipsanen, Harri; Ahopelto, Jouni.

In: Applied Physics Letters, Vol. 66, No. 18, 1995, p. 2364-2366.

Research output: Contribution to journalArticleScientificpeer-review

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AU - Lipsanen, Harri

AU - Ahopelto, Jouni

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DO - 10.1063/1.113984

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SN - 0003-6951

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