INIS
strains
100%
optical properties
100%
emission
100%
islands
100%
fabrication
100%
quantum dots
100%
ground states
100%
photoluminescence
66%
quantum wells
66%
excited states
66%
density
33%
surfaces
33%
electrons
33%
magnetic fields
33%
conversion
33%
peaks
33%
excitation
33%
capture
33%
holes
33%
time resolution
33%
luminescence
33%
lifetime
33%
confinement
33%
angular momentum
33%
indium phosphides
33%
gallium arsenides
33%
relaxation time
33%
zeeman effect
33%
coulomb scattering
33%
Keyphrases
Optical Properties
100%
Quantum Dots
100%
Strain-induced
100%
Magnetic Field
33%
Emission Peak
33%
GaAs Quantum Well
33%
Luminescence
33%
Photoluminescence
33%
Capture Process
33%
InGaAs
33%
Tensile Strain
33%
Relaxation Time
33%
Excited States
33%
Upconversion
33%
Quantum Well
33%
Sub-picosecond
33%
Radiative Lifetime
33%
Confinement Potential
33%
Photoluminescence Measurements
33%
Lateral Confinement
33%
High Angular Momentum
33%
Zeeman Splitting
33%
Coulomb Scattering
33%
Time-resolved Photoluminescence
33%
Excitation Density
33%
Local Potential
33%
First Excited State
33%
High Excitation
33%
Physics
Quantum Dot
100%
Optical Property
100%
Ground State
100%
Quantum Wells
66%
Excitation
66%
Photoluminescence
66%
Relaxation Time
33%
Magnetic Field
33%
Angular Momentum
33%
Chemistry
Optical Property
100%
Ground State
100%
Quantum Dot
100%
Photoluminescence
66%
Excited State
66%
Emission Peak
33%
Relaxation
33%
Magnetic Field
33%
Angular Momentum
33%