Stress control of sputter-deposited Mo-N films for micromechanical applications

Hannu Kattelus, J. Koskenala, Arto Nurmela, A. Niskanen

Research output: Contribution to journalArticleScientificpeer-review

20 Citations (Scopus)

Abstract

Sputter-deposited metallic thin films are attractive materials for micromechanics but they suffer from large stress variations within the batch or even a single wafer. The origin of such variations is in the microcrystalline structure, and specifically its dependence on sputtering geometry. It might be assumed that getting rid of the long-range atomic order in the deposited film would help in obtaining improved uniformity. The purpose of this study is to amorphise molybdenum films by nitrogen and to characterize the resulting Mo N film properties. A partial cure for the nonuniformity of stress is, indeed, realized since film-plane stress variations are eliminated by nitridation. A vertical gradient still remains, bending relieved micromechanical beams strongly upwards. This behavior is believed to be due to imperfect amorphisation -the existence of columnar nano-scale crystallites.
Original languageEnglish
Pages (from-to)97-105
JournalMicroelectronic Engineering
Volume60
Issue number1-2
DOIs
Publication statusE-pub ahead of print - 8 Dec 2001
MoE publication typeA1 Journal article-refereed

Fingerprint

micromechanics
Metallic films
plane stress
Nitridation
Molybdenum
Micromechanics
Amorphization
Crystallites
nonuniformity
crystallites
molybdenum
Sputtering
Nitrogen
sputtering
wafers
nitrogen
Thin films
gradients
Geometry
thin films

Keywords

  • micromechanics
  • molybdenum nitride
  • amorphous metal
  • mechanical properties
  • stress
  • metal micromachining

Cite this

Kattelus, Hannu ; Koskenala, J. ; Nurmela, Arto ; Niskanen, A. / Stress control of sputter-deposited Mo-N films for micromechanical applications. In: Microelectronic Engineering. 2001 ; Vol. 60, No. 1-2. pp. 97-105.
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Stress control of sputter-deposited Mo-N films for micromechanical applications. / Kattelus, Hannu; Koskenala, J.; Nurmela, Arto; Niskanen, A.

In: Microelectronic Engineering, Vol. 60, No. 1-2, 08.12.2001, p. 97-105.

Research output: Contribution to journalArticleScientificpeer-review

TY - JOUR

T1 - Stress control of sputter-deposited Mo-N films for micromechanical applications

AU - Kattelus, Hannu

AU - Koskenala, J.

AU - Nurmela, Arto

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AB - Sputter-deposited metallic thin films are attractive materials for micromechanics but they suffer from large stress variations within the batch or even a single wafer. The origin of such variations is in the microcrystalline structure, and specifically its dependence on sputtering geometry. It might be assumed that getting rid of the long-range atomic order in the deposited film would help in obtaining improved uniformity. The purpose of this study is to amorphise molybdenum films by nitrogen and to characterize the resulting Mo N film properties. A partial cure for the nonuniformity of stress is, indeed, realized since film-plane stress variations are eliminated by nitridation. A vertical gradient still remains, bending relieved micromechanical beams strongly upwards. This behavior is believed to be due to imperfect amorphisation -the existence of columnar nano-scale crystallites.

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KW - molybdenum nitride

KW - amorphous metal

KW - mechanical properties

KW - stress

KW - metal micromachining

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JF - Microelectronic Engineering

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