Stress in atomic layer deposited aluminium oxide and titanium dioxide thin films

Oili Ylivaara (Corresponding author), Riikka L. Puurunen, Mikko Laitinen, Sakari Sintonen, Saima Ali, Timo Sajavaara, Harri Lipsanen, Jyrki Kiihamäki

    Research output: Chapter in Book/Report/Conference proceedingConference abstract in proceedingsScientific

    Abstract

    Understanding the stress behaviour in atomic layer deposited (ALD) thin films enables the optimization of the surface microelectromechanical systems (MEMS) device design. To achieve stress control, we need to characterize how different factors influence the stress in ALD thin films. Stress in ALD aluminium oxide (Al2O3) and titanium dioxide (TiO2) thin films were studied on 150 mm silicon (100) wafers as a function of deposition temperature and layer thickness. Deposition temperature was varied from 110 to 300 °C and layer thickness was varied from 10 to 600 nm. Deposition reactor was Picosun SUNALETM R-150 with water (H2O) based processes. Precursors in use were trimethylaluminum (Me3Al) for Al2O3 and titanium tetrachloride (TiCl4) for TiO2. Stresses in ALD thin films were determined using surface profilometer Veeco Dektak and wafer curvature method. Stresses were calculated using Stoney s equation. Composition was determined with time-of-flight elastic recoil detection analysis (TOF-ERDA) and thickness and density with X-ray reflectivity (XRR). All ALD thin films were measured to be under tensile stress. The stress levels of Al2O3 decreased with increasing deposition temperature. When the influence of the layer thickness was studied with Al2O3 in constant temperature, 300°C, the stress levels increased slightly with decreasing film thickness. Stress adjustment by temperature and thickness seems to be more complicated with TiO2, where the crystallization influences the stress level.
    Original languageEnglish
    Title of host publicationTechnical Program and Abstracts
    PublisherAmerican Vacuum Society AVS
    Publication statusPublished - 2012
    Event12th International Conference on Atomic Layer Deposition, ALD 2012 - Dresden, Germany
    Duration: 17 Jun 201220 Jun 2012
    Conference number: 12

    Conference

    Conference12th International Conference on Atomic Layer Deposition, ALD 2012
    Abbreviated titleALD 2012
    CountryGermany
    CityDresden
    Period17/06/1220/06/12

    Fingerprint

    dioxides
    titanium oxides
    aluminum oxides
    thin films
    temperature
    wafers
    tetrachlorides
    profilometers
    tensile stress
    microelectromechanical systems
    film thickness
    titanium
    adjusting
    reactors
    curvature
    crystallization
    reflectance
    optimization
    silicon

    Keywords

    • atomic layer deposition
    • ALD
    • aluminum oxide
    • titanium dioxide
    • residual stress

    Cite this

    Ylivaara, O., Puurunen, R. L., Laitinen, M., Sintonen, S., Ali, S., Sajavaara, T., ... Kiihamäki, J. (2012). Stress in atomic layer deposited aluminium oxide and titanium dioxide thin films. In Technical Program and Abstracts American Vacuum Society AVS.
    Ylivaara, Oili ; Puurunen, Riikka L. ; Laitinen, Mikko ; Sintonen, Sakari ; Ali, Saima ; Sajavaara, Timo ; Lipsanen, Harri ; Kiihamäki, Jyrki. / Stress in atomic layer deposited aluminium oxide and titanium dioxide thin films. Technical Program and Abstracts. American Vacuum Society AVS, 2012.
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    abstract = "Understanding the stress behaviour in atomic layer deposited (ALD) thin films enables the optimization of the surface microelectromechanical systems (MEMS) device design. To achieve stress control, we need to characterize how different factors influence the stress in ALD thin films. Stress in ALD aluminium oxide (Al2O3) and titanium dioxide (TiO2) thin films were studied on 150 mm silicon (100) wafers as a function of deposition temperature and layer thickness. Deposition temperature was varied from 110 to 300 °C and layer thickness was varied from 10 to 600 nm. Deposition reactor was Picosun SUNALETM R-150 with water (H2O) based processes. Precursors in use were trimethylaluminum (Me3Al) for Al2O3 and titanium tetrachloride (TiCl4) for TiO2. Stresses in ALD thin films were determined using surface profilometer Veeco Dektak and wafer curvature method. Stresses were calculated using Stoney s equation. Composition was determined with time-of-flight elastic recoil detection analysis (TOF-ERDA) and thickness and density with X-ray reflectivity (XRR). All ALD thin films were measured to be under tensile stress. The stress levels of Al2O3 decreased with increasing deposition temperature. When the influence of the layer thickness was studied with Al2O3 in constant temperature, 300°C, the stress levels increased slightly with decreasing film thickness. Stress adjustment by temperature and thickness seems to be more complicated with TiO2, where the crystallization influences the stress level.",
    keywords = "atomic layer deposition, ALD, aluminum oxide, titanium dioxide, residual stress",
    author = "Oili Ylivaara and Puurunen, {Riikka L.} and Mikko Laitinen and Sakari Sintonen and Saima Ali and Timo Sajavaara and Harri Lipsanen and Jyrki Kiiham{\"a}ki",
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    language = "English",
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    Ylivaara, O, Puurunen, RL, Laitinen, M, Sintonen, S, Ali, S, Sajavaara, T, Lipsanen, H & Kiihamäki, J 2012, Stress in atomic layer deposited aluminium oxide and titanium dioxide thin films. in Technical Program and Abstracts. American Vacuum Society AVS, 12th International Conference on Atomic Layer Deposition, ALD 2012, Dresden, Germany, 17/06/12.

    Stress in atomic layer deposited aluminium oxide and titanium dioxide thin films. / Ylivaara, Oili (Corresponding author); Puurunen, Riikka L.; Laitinen, Mikko; Sintonen, Sakari; Ali, Saima; Sajavaara, Timo; Lipsanen, Harri; Kiihamäki, Jyrki.

    Technical Program and Abstracts. American Vacuum Society AVS, 2012.

    Research output: Chapter in Book/Report/Conference proceedingConference abstract in proceedingsScientific

    TY - CHAP

    T1 - Stress in atomic layer deposited aluminium oxide and titanium dioxide thin films

    AU - Ylivaara, Oili

    AU - Puurunen, Riikka L.

    AU - Laitinen, Mikko

    AU - Sintonen, Sakari

    AU - Ali, Saima

    AU - Sajavaara, Timo

    AU - Lipsanen, Harri

    AU - Kiihamäki, Jyrki

    N1 - Published abstract of a poster.

    PY - 2012

    Y1 - 2012

    N2 - Understanding the stress behaviour in atomic layer deposited (ALD) thin films enables the optimization of the surface microelectromechanical systems (MEMS) device design. To achieve stress control, we need to characterize how different factors influence the stress in ALD thin films. Stress in ALD aluminium oxide (Al2O3) and titanium dioxide (TiO2) thin films were studied on 150 mm silicon (100) wafers as a function of deposition temperature and layer thickness. Deposition temperature was varied from 110 to 300 °C and layer thickness was varied from 10 to 600 nm. Deposition reactor was Picosun SUNALETM R-150 with water (H2O) based processes. Precursors in use were trimethylaluminum (Me3Al) for Al2O3 and titanium tetrachloride (TiCl4) for TiO2. Stresses in ALD thin films were determined using surface profilometer Veeco Dektak and wafer curvature method. Stresses were calculated using Stoney s equation. Composition was determined with time-of-flight elastic recoil detection analysis (TOF-ERDA) and thickness and density with X-ray reflectivity (XRR). All ALD thin films were measured to be under tensile stress. The stress levels of Al2O3 decreased with increasing deposition temperature. When the influence of the layer thickness was studied with Al2O3 in constant temperature, 300°C, the stress levels increased slightly with decreasing film thickness. Stress adjustment by temperature and thickness seems to be more complicated with TiO2, where the crystallization influences the stress level.

    AB - Understanding the stress behaviour in atomic layer deposited (ALD) thin films enables the optimization of the surface microelectromechanical systems (MEMS) device design. To achieve stress control, we need to characterize how different factors influence the stress in ALD thin films. Stress in ALD aluminium oxide (Al2O3) and titanium dioxide (TiO2) thin films were studied on 150 mm silicon (100) wafers as a function of deposition temperature and layer thickness. Deposition temperature was varied from 110 to 300 °C and layer thickness was varied from 10 to 600 nm. Deposition reactor was Picosun SUNALETM R-150 with water (H2O) based processes. Precursors in use were trimethylaluminum (Me3Al) for Al2O3 and titanium tetrachloride (TiCl4) for TiO2. Stresses in ALD thin films were determined using surface profilometer Veeco Dektak and wafer curvature method. Stresses were calculated using Stoney s equation. Composition was determined with time-of-flight elastic recoil detection analysis (TOF-ERDA) and thickness and density with X-ray reflectivity (XRR). All ALD thin films were measured to be under tensile stress. The stress levels of Al2O3 decreased with increasing deposition temperature. When the influence of the layer thickness was studied with Al2O3 in constant temperature, 300°C, the stress levels increased slightly with decreasing film thickness. Stress adjustment by temperature and thickness seems to be more complicated with TiO2, where the crystallization influences the stress level.

    KW - atomic layer deposition

    KW - ALD

    KW - aluminum oxide

    KW - titanium dioxide

    KW - residual stress

    M3 - Conference abstract in proceedings

    BT - Technical Program and Abstracts

    PB - American Vacuum Society AVS

    ER -

    Ylivaara O, Puurunen RL, Laitinen M, Sintonen S, Ali S, Sajavaara T et al. Stress in atomic layer deposited aluminium oxide and titanium dioxide thin films. In Technical Program and Abstracts. American Vacuum Society AVS. 2012