Stress in atomic layer deposited aluminium oxide and titanium dioxide thin films

Oili Ylivaara (Corresponding author), Riikka L. Puurunen, Mikko Laitinen, Sakari Sintonen, Saima Ali, Timo Sajavaara, Harri Lipsanen, Jyrki Kiihamäki

Research output: Chapter in Book/Report/Conference proceedingConference abstract in proceedingsScientific

Abstract

Understanding the stress behaviour in atomic layer deposited (ALD) thin films enables the optimization of the surface microelectromechanical systems (MEMS) device design. To achieve stress control, we need to characterize how different factors influence the stress in ALD thin films. Stress in ALD aluminium oxide (Al2O3) and titanium dioxide (TiO2) thin films were studied on 150 mm silicon (100) wafers as a function of deposition temperature and layer thickness. Deposition temperature was varied from 110 to 300 °C and layer thickness was varied from 10 to 600 nm. Deposition reactor was Picosun SUNALETM R-150 with water (H2O) based processes. Precursors in use were trimethylaluminum (Me3Al) for Al2O3 and titanium tetrachloride (TiCl4) for TiO2. Stresses in ALD thin films were determined using surface profilometer Veeco Dektak and wafer curvature method. Stresses were calculated using Stoney s equation. Composition was determined with time-of-flight elastic recoil detection analysis (TOF-ERDA) and thickness and density with X-ray reflectivity (XRR). All ALD thin films were measured to be under tensile stress. The stress levels of Al2O3 decreased with increasing deposition temperature. When the influence of the layer thickness was studied with Al2O3 in constant temperature, 300°C, the stress levels increased slightly with decreasing film thickness. Stress adjustment by temperature and thickness seems to be more complicated with TiO2, where the crystallization influences the stress level.
Original languageEnglish
Title of host publicationTechnical Program and Abstracts
PublisherAmerican Vacuum Society AVS
Publication statusPublished - 2012
Event12th International Conference on Atomic Layer Deposition, ALD 2012 - Dresden, Germany
Duration: 17 Jun 201220 Jun 2012
Conference number: 12

Conference

Conference12th International Conference on Atomic Layer Deposition, ALD 2012
Abbreviated titleALD 2012
CountryGermany
CityDresden
Period17/06/1220/06/12

Fingerprint

dioxides
titanium oxides
aluminum oxides
thin films
temperature
wafers
tetrachlorides
profilometers
tensile stress
microelectromechanical systems
film thickness
titanium
adjusting
reactors
curvature
crystallization
reflectance
optimization
silicon

Keywords

  • atomic layer deposition
  • ALD
  • aluminum oxide
  • titanium dioxide
  • residual stress

Cite this

Ylivaara, O., Puurunen, R. L., Laitinen, M., Sintonen, S., Ali, S., Sajavaara, T., ... Kiihamäki, J. (2012). Stress in atomic layer deposited aluminium oxide and titanium dioxide thin films. In Technical Program and Abstracts American Vacuum Society AVS.
Ylivaara, Oili ; Puurunen, Riikka L. ; Laitinen, Mikko ; Sintonen, Sakari ; Ali, Saima ; Sajavaara, Timo ; Lipsanen, Harri ; Kiihamäki, Jyrki. / Stress in atomic layer deposited aluminium oxide and titanium dioxide thin films. Technical Program and Abstracts. American Vacuum Society AVS, 2012.
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abstract = "Understanding the stress behaviour in atomic layer deposited (ALD) thin films enables the optimization of the surface microelectromechanical systems (MEMS) device design. To achieve stress control, we need to characterize how different factors influence the stress in ALD thin films. Stress in ALD aluminium oxide (Al2O3) and titanium dioxide (TiO2) thin films were studied on 150 mm silicon (100) wafers as a function of deposition temperature and layer thickness. Deposition temperature was varied from 110 to 300 °C and layer thickness was varied from 10 to 600 nm. Deposition reactor was Picosun SUNALETM R-150 with water (H2O) based processes. Precursors in use were trimethylaluminum (Me3Al) for Al2O3 and titanium tetrachloride (TiCl4) for TiO2. Stresses in ALD thin films were determined using surface profilometer Veeco Dektak and wafer curvature method. Stresses were calculated using Stoney s equation. Composition was determined with time-of-flight elastic recoil detection analysis (TOF-ERDA) and thickness and density with X-ray reflectivity (XRR). All ALD thin films were measured to be under tensile stress. The stress levels of Al2O3 decreased with increasing deposition temperature. When the influence of the layer thickness was studied with Al2O3 in constant temperature, 300°C, the stress levels increased slightly with decreasing film thickness. Stress adjustment by temperature and thickness seems to be more complicated with TiO2, where the crystallization influences the stress level.",
keywords = "atomic layer deposition, ALD, aluminum oxide, titanium dioxide, residual stress",
author = "Oili Ylivaara and Puurunen, {Riikka L.} and Mikko Laitinen and Sakari Sintonen and Saima Ali and Timo Sajavaara and Harri Lipsanen and Jyrki Kiiham{\"a}ki",
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Ylivaara, O, Puurunen, RL, Laitinen, M, Sintonen, S, Ali, S, Sajavaara, T, Lipsanen, H & Kiihamäki, J 2012, Stress in atomic layer deposited aluminium oxide and titanium dioxide thin films. in Technical Program and Abstracts. American Vacuum Society AVS, 12th International Conference on Atomic Layer Deposition, ALD 2012, Dresden, Germany, 17/06/12.

Stress in atomic layer deposited aluminium oxide and titanium dioxide thin films. / Ylivaara, Oili (Corresponding author); Puurunen, Riikka L.; Laitinen, Mikko; Sintonen, Sakari; Ali, Saima; Sajavaara, Timo; Lipsanen, Harri; Kiihamäki, Jyrki.

Technical Program and Abstracts. American Vacuum Society AVS, 2012.

Research output: Chapter in Book/Report/Conference proceedingConference abstract in proceedingsScientific

TY - CHAP

T1 - Stress in atomic layer deposited aluminium oxide and titanium dioxide thin films

AU - Ylivaara, Oili

AU - Puurunen, Riikka L.

AU - Laitinen, Mikko

AU - Sintonen, Sakari

AU - Ali, Saima

AU - Sajavaara, Timo

AU - Lipsanen, Harri

AU - Kiihamäki, Jyrki

N1 - Published abstract of a poster.

PY - 2012

Y1 - 2012

N2 - Understanding the stress behaviour in atomic layer deposited (ALD) thin films enables the optimization of the surface microelectromechanical systems (MEMS) device design. To achieve stress control, we need to characterize how different factors influence the stress in ALD thin films. Stress in ALD aluminium oxide (Al2O3) and titanium dioxide (TiO2) thin films were studied on 150 mm silicon (100) wafers as a function of deposition temperature and layer thickness. Deposition temperature was varied from 110 to 300 °C and layer thickness was varied from 10 to 600 nm. Deposition reactor was Picosun SUNALETM R-150 with water (H2O) based processes. Precursors in use were trimethylaluminum (Me3Al) for Al2O3 and titanium tetrachloride (TiCl4) for TiO2. Stresses in ALD thin films were determined using surface profilometer Veeco Dektak and wafer curvature method. Stresses were calculated using Stoney s equation. Composition was determined with time-of-flight elastic recoil detection analysis (TOF-ERDA) and thickness and density with X-ray reflectivity (XRR). All ALD thin films were measured to be under tensile stress. The stress levels of Al2O3 decreased with increasing deposition temperature. When the influence of the layer thickness was studied with Al2O3 in constant temperature, 300°C, the stress levels increased slightly with decreasing film thickness. Stress adjustment by temperature and thickness seems to be more complicated with TiO2, where the crystallization influences the stress level.

AB - Understanding the stress behaviour in atomic layer deposited (ALD) thin films enables the optimization of the surface microelectromechanical systems (MEMS) device design. To achieve stress control, we need to characterize how different factors influence the stress in ALD thin films. Stress in ALD aluminium oxide (Al2O3) and titanium dioxide (TiO2) thin films were studied on 150 mm silicon (100) wafers as a function of deposition temperature and layer thickness. Deposition temperature was varied from 110 to 300 °C and layer thickness was varied from 10 to 600 nm. Deposition reactor was Picosun SUNALETM R-150 with water (H2O) based processes. Precursors in use were trimethylaluminum (Me3Al) for Al2O3 and titanium tetrachloride (TiCl4) for TiO2. Stresses in ALD thin films were determined using surface profilometer Veeco Dektak and wafer curvature method. Stresses were calculated using Stoney s equation. Composition was determined with time-of-flight elastic recoil detection analysis (TOF-ERDA) and thickness and density with X-ray reflectivity (XRR). All ALD thin films were measured to be under tensile stress. The stress levels of Al2O3 decreased with increasing deposition temperature. When the influence of the layer thickness was studied with Al2O3 in constant temperature, 300°C, the stress levels increased slightly with decreasing film thickness. Stress adjustment by temperature and thickness seems to be more complicated with TiO2, where the crystallization influences the stress level.

KW - atomic layer deposition

KW - ALD

KW - aluminum oxide

KW - titanium dioxide

KW - residual stress

M3 - Conference abstract in proceedings

BT - Technical Program and Abstracts

PB - American Vacuum Society AVS

ER -

Ylivaara O, Puurunen RL, Laitinen M, Sintonen S, Ali S, Sajavaara T et al. Stress in atomic layer deposited aluminium oxide and titanium dioxide thin films. In Technical Program and Abstracts. American Vacuum Society AVS. 2012