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Stresses in ALD films: Aiming for zero stress thin films
Riina Ritasalo
,
Oili Ylivaara
, Tero Pilvi
, Tommi Suni
Picosun Oy
VTT (former employee or external)
University of Tokyo
Research output
:
Contribution to conference
›
Conference Abstract
›
Scientific
›
peer-review
Overview
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Dive into the research topics of 'Stresses in ALD films: Aiming for zero stress thin films'. Together they form a unique fingerprint.
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Keyphrases
Atomic Layer Deposition
100%
Zero Stress
100%
Residual Stress
75%
Deposition Temperature
25%
Micro-electro-mechanical Systems
25%
Metal Oxide
25%
Thermal Atomic Layer Deposition
25%
Common Metals
25%
Further Processing
12%
Wafer Curvature
12%
Film Thickness
12%
Curvature Measurement
12%
Process Conditions
12%
Device Performance
12%
Measuring Instrument
12%
Material Layer
12%
Room Temperature
12%
Cost Efficiency
12%
Thermal Stress
12%
Silicon Substrate
12%
Silicon Wafer
12%
SiO2-Al2O3
12%
Coefficient of Thermal Expansion
12%
System Process
12%
HfO2
12%
Deposited Material
12%
Stress Measurement
12%
System Designer
12%
TiO2-SiO2
12%
Intrinsic Stress
12%
Deposited Film
12%
Double-sided
12%
Process Chemistry
12%
Side-polished
12%
Stress Effect
12%
Volume Production
12%
Batch Processing
12%
Advanced Reactors
12%
Thermal Process
12%
Ta2O5
12%
Film Materials
12%
Varying Temperature
12%
Stress Change
12%
HfO2 Films
12%
Ellipsometer
12%
Film Stacking
12%
Device Reliability
12%
150-mm Diameter
12%
Film Delamination
12%
Thin Film Materials
12%
Film Buckling
12%
Comprehensive Stresses
12%
INIS
layers
100%
thin films
100%
deposition
100%
films
100%
residual stresses
42%
data
21%
substrates
21%
silicon
14%
oxides
14%
processing
14%
metals
14%
microelectromechanical systems
14%
tools
7%
performance
7%
comparative evaluations
7%
efficiency
7%
thickness
7%
production
7%
cost
7%
devices
7%
precursor
7%
volume
7%
chemistry
7%
titanium oxides
7%
reactors
7%
manufacturing
7%
reliability
7%
stacks
7%
thermal expansion
7%
temperature range 0273-0400 k
7%
thermal stresses
7%
buckling
7%
ellipsometers
7%
Engineering
Atomic Layer Deposition
100%
Thin Films
100%
Residual Stress
75%
Deposition Process
37%
Deposition Temperature
25%
Microelectromechanical System
25%
Film Material
25%
Process Condition
12%
Material Layer
12%
Tensiles
12%
Silicon Substrate
12%
Process Parameter
12%
Device Performance
12%
Deposited Material
12%
System Designer
12%
Production Volume
12%
Deposited Film
12%
Mm Diameter
12%
Delamination
12%
Thermal Stress
12%
Batch Processing
12%
Thermal Process
12%
Room Temperature
12%
Cost Efficiency
12%
Silicon Wafer
12%
Silicon Dioxide
12%
Material Science
Film Deposition
100%
Film
100%
Thin Films
100%
Residual Stress
50%
Metal Oxide
16%
Microelectromechanical System
16%
Film Thickness
8%
Silicon Wafer
8%
Delamination
8%
Stress Measurement
8%
Thermal Stress
8%
Titanium Dioxide
8%
Silicon
8%
Aluminum Oxide
8%
Thermal Expansion
8%