Strip detectors processed on high-resistivity 6-inch diameter magnetic czochralskisilicon (MCz-Si) substrates

Xiaopeng Wu, J. Härkonen, Juha Kalliopuska, E. Tuominen, T. Mäenpää, P. Luukka, E. Tuovinen, A. Karadzhinova, L. Spiegel, Simo Eränen, Aarne Oja, A. Haapalinna

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2 Citations (Scopus)


Tracking detectors for future high-luminosity particle physics experiments have to be simultaneously radiation hard and cost efficient. This paper describes processing and characterization of p+/n-/n + (n-type silicon bulk) detectors made of high-resistivity Magnetic Czochralski silicon (MCz-Si) substrates with 6-inch wafer diameter. The processing was carried out on a line used for large-scale production of sensors using standard fabrication methods, such as implanting polysilicon resistors to bias individual sensor strips. Special care was taken to avoid the creation of Thermal Donors (TD) during processing. The sensors have a full depletion voltage of 120-150 V which are uniform over the investigated sensors. All of the leakage current densities were below 55~ nA/cm\bf 2 at 200 V bias voltage. A strip sensor with 768 channels was attached to readout electronics and tested in particle beam with a data acquisition (DAQ) similar to the system used by the CMS experiment at the CERN LHC. The test beam results show a signal-to-noise ratio greater than 40 for the test beam sensor. The results demonstrate that MCz-Si detectors can reliably be manufactured in the industrial scale semiconductor process
Original languageEnglish
Pages (from-to)611-618
JournalIEEE Transactions on Nuclear Science
Issue number1
Publication statusPublished - 2014
MoE publication typeA1 Journal article-refereed


  • High energy physics
  • radiation hardness
  • silicon radiation sensors
  • strip detector


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