Strip detectors processed on high-resistivity 6-inch diameter magnetic czochralskisilicon (MCz-Si) substrates

Xiaopeng Wu, J. Härkonen, Juha Kalliopuska, E. Tuominen, T. Mäenpää, P. Luukka, E. Tuovinen, A. Karadzhinova, L. Spiegel, Simo Eränen, Aarne Oja, A. Haapalinna

Research output: Contribution to journalArticleScientificpeer-review

2 Citations (Scopus)

Abstract

Tracking detectors for future high-luminosity particle physics experiments have to be simultaneously radiation hard and cost efficient. This paper describes processing and characterization of p+/n-/n + (n-type silicon bulk) detectors made of high-resistivity Magnetic Czochralski silicon (MCz-Si) substrates with 6-inch wafer diameter. The processing was carried out on a line used for large-scale production of sensors using standard fabrication methods, such as implanting polysilicon resistors to bias individual sensor strips. Special care was taken to avoid the creation of Thermal Donors (TD) during processing. The sensors have a full depletion voltage of 120-150 V which are uniform over the investigated sensors. All of the leakage current densities were below 55~ nA/cm\bf 2 at 200 V bias voltage. A strip sensor with 768 channels was attached to readout electronics and tested in particle beam with a data acquisition (DAQ) similar to the system used by the CMS experiment at the CERN LHC. The test beam results show a signal-to-noise ratio greater than 40 for the test beam sensor. The results demonstrate that MCz-Si detectors can reliably be manufactured in the industrial scale semiconductor process
Original languageEnglish
Pages (from-to)611-618
JournalIEEE Transactions on Nuclear Science
Volume61
Issue number1
DOIs
Publication statusPublished - 2014
MoE publication typeA1 Journal article-refereed

Fingerprint

strip
Detectors
electrical resistivity
sensors
detectors
Sensors
Substrates
Processing
Silicon
Particle beams
High energy physics
particle beams
electric potential
silicon
Bias voltage
Polysilicon
resistors
Leakage currents
Resistors
data acquisition

Keywords

  • High energy physics
  • radiation hardness
  • silicon radiation sensors
  • strip detector

Cite this

Wu, X., Härkonen, J., Kalliopuska, J., Tuominen, E., Mäenpää, T., Luukka, P., ... Haapalinna, A. (2014). Strip detectors processed on high-resistivity 6-inch diameter magnetic czochralskisilicon (MCz-Si) substrates. IEEE Transactions on Nuclear Science, 61(1), 611-618. https://doi.org/10.1109/TNS.2013.2295430
Wu, Xiaopeng ; Härkonen, J. ; Kalliopuska, Juha ; Tuominen, E. ; Mäenpää, T. ; Luukka, P. ; Tuovinen, E. ; Karadzhinova, A. ; Spiegel, L. ; Eränen, Simo ; Oja, Aarne ; Haapalinna, A. / Strip detectors processed on high-resistivity 6-inch diameter magnetic czochralskisilicon (MCz-Si) substrates. In: IEEE Transactions on Nuclear Science. 2014 ; Vol. 61, No. 1. pp. 611-618.
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title = "Strip detectors processed on high-resistivity 6-inch diameter magnetic czochralskisilicon (MCz-Si) substrates",
abstract = "Tracking detectors for future high-luminosity particle physics experiments have to be simultaneously radiation hard and cost efficient. This paper describes processing and characterization of p+/n-/n + (n-type silicon bulk) detectors made of high-resistivity Magnetic Czochralski silicon (MCz-Si) substrates with 6-inch wafer diameter. The processing was carried out on a line used for large-scale production of sensors using standard fabrication methods, such as implanting polysilicon resistors to bias individual sensor strips. Special care was taken to avoid the creation of Thermal Donors (TD) during processing. The sensors have a full depletion voltage of 120-150 V which are uniform over the investigated sensors. All of the leakage current densities were below 55~ nA/cm\bf 2 at 200 V bias voltage. A strip sensor with 768 channels was attached to readout electronics and tested in particle beam with a data acquisition (DAQ) similar to the system used by the CMS experiment at the CERN LHC. The test beam results show a signal-to-noise ratio greater than 40 for the test beam sensor. The results demonstrate that MCz-Si detectors can reliably be manufactured in the industrial scale semiconductor process",
keywords = "High energy physics, radiation hardness, silicon radiation sensors, strip detector",
author = "Xiaopeng Wu and J. H{\"a}rkonen and Juha Kalliopuska and E. Tuominen and T. M{\"a}enp{\"a}{\"a} and P. Luukka and E. Tuovinen and A. Karadzhinova and L. Spiegel and Simo Er{\"a}nen and Aarne Oja and A. Haapalinna",
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Wu, X, Härkonen, J, Kalliopuska, J, Tuominen, E, Mäenpää, T, Luukka, P, Tuovinen, E, Karadzhinova, A, Spiegel, L, Eränen, S, Oja, A & Haapalinna, A 2014, 'Strip detectors processed on high-resistivity 6-inch diameter magnetic czochralskisilicon (MCz-Si) substrates', IEEE Transactions on Nuclear Science, vol. 61, no. 1, pp. 611-618. https://doi.org/10.1109/TNS.2013.2295430

Strip detectors processed on high-resistivity 6-inch diameter magnetic czochralskisilicon (MCz-Si) substrates. / Wu, Xiaopeng; Härkonen, J.; Kalliopuska, Juha; Tuominen, E.; Mäenpää, T.; Luukka, P.; Tuovinen, E.; Karadzhinova, A.; Spiegel, L.; Eränen, Simo; Oja, Aarne; Haapalinna, A.

In: IEEE Transactions on Nuclear Science, Vol. 61, No. 1, 2014, p. 611-618.

Research output: Contribution to journalArticleScientificpeer-review

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T1 - Strip detectors processed on high-resistivity 6-inch diameter magnetic czochralskisilicon (MCz-Si) substrates

AU - Wu, Xiaopeng

AU - Härkonen, J.

AU - Kalliopuska, Juha

AU - Tuominen, E.

AU - Mäenpää, T.

AU - Luukka, P.

AU - Tuovinen, E.

AU - Karadzhinova, A.

AU - Spiegel, L.

AU - Eränen, Simo

AU - Oja, Aarne

AU - Haapalinna, A.

PY - 2014

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N2 - Tracking detectors for future high-luminosity particle physics experiments have to be simultaneously radiation hard and cost efficient. This paper describes processing and characterization of p+/n-/n + (n-type silicon bulk) detectors made of high-resistivity Magnetic Czochralski silicon (MCz-Si) substrates with 6-inch wafer diameter. The processing was carried out on a line used for large-scale production of sensors using standard fabrication methods, such as implanting polysilicon resistors to bias individual sensor strips. Special care was taken to avoid the creation of Thermal Donors (TD) during processing. The sensors have a full depletion voltage of 120-150 V which are uniform over the investigated sensors. All of the leakage current densities were below 55~ nA/cm\bf 2 at 200 V bias voltage. A strip sensor with 768 channels was attached to readout electronics and tested in particle beam with a data acquisition (DAQ) similar to the system used by the CMS experiment at the CERN LHC. The test beam results show a signal-to-noise ratio greater than 40 for the test beam sensor. The results demonstrate that MCz-Si detectors can reliably be manufactured in the industrial scale semiconductor process

AB - Tracking detectors for future high-luminosity particle physics experiments have to be simultaneously radiation hard and cost efficient. This paper describes processing and characterization of p+/n-/n + (n-type silicon bulk) detectors made of high-resistivity Magnetic Czochralski silicon (MCz-Si) substrates with 6-inch wafer diameter. The processing was carried out on a line used for large-scale production of sensors using standard fabrication methods, such as implanting polysilicon resistors to bias individual sensor strips. Special care was taken to avoid the creation of Thermal Donors (TD) during processing. The sensors have a full depletion voltage of 120-150 V which are uniform over the investigated sensors. All of the leakage current densities were below 55~ nA/cm\bf 2 at 200 V bias voltage. A strip sensor with 768 channels was attached to readout electronics and tested in particle beam with a data acquisition (DAQ) similar to the system used by the CMS experiment at the CERN LHC. The test beam results show a signal-to-noise ratio greater than 40 for the test beam sensor. The results demonstrate that MCz-Si detectors can reliably be manufactured in the industrial scale semiconductor process

KW - High energy physics

KW - radiation hardness

KW - silicon radiation sensors

KW - strip detector

U2 - 10.1109/TNS.2013.2295430

DO - 10.1109/TNS.2013.2295430

M3 - Article

VL - 61

SP - 611

EP - 618

JO - IEEE Transactions on Nuclear Science

JF - IEEE Transactions on Nuclear Science

SN - 0018-9499

IS - 1

ER -