Structural, magnetic, and transport properties of Fe3O 4/Si(111) and Fe3O4Si(001)

C. Boothman, A. M. Sanchez, Sebastiaan Van Dijken (Corresponding Author)

Research output: Contribution to journalArticleScientificpeer-review

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Abstract

Carrier transport across Fe3 O4 Si interfaces has been studied for two different Si substrate orientations. The Fe3 O4 films exhibit a (111) texture on both (111)- and (001)-oriented substrates and field-cooling experiments show the characteristic step in film magnetization at the Verwey transition temperature of magnetite. Current-voltage measurements indicate the formation of high-quality Schottky barriers with an ideality factor of about n=1.06. Fits to the transport data using the thermionic emission/diffusion model yield Schottky barrier heights of 0.52 and 0.65 eV for Fe3 O4 Si (111) and Fe3 O4 Si (001) structures, respectively. The interface between the magnetite films and silicon substrates consists of a crystalline iron silicide/amorphous oxide bilayer with reduced magnetic moment.
Original languageEnglish
Article number123903
JournalJournal of Applied Physics
Volume101
Issue number12
DOIs
Publication statusPublished - 2007
MoE publication typeA1 Journal article-refereed

Fingerprint

transport properties
magnetic properties
magnetite
thermionic emission
electrical measurement
textures
magnetic moments
transition temperature
cooling
iron
magnetization
oxides
silicon

Keywords

  • iron compounds
  • silicon
  • elemental semiconductors
  • semiconductor-insulator boundaries
  • magnetic thin films
  • magnetisation
  • metal-insulator transition
  • Schottky barriers
  • diffusion
  • magnetic moments
  • interface structure

Cite this

Boothman, C. ; Sanchez, A. M. ; Van Dijken, Sebastiaan. / Structural, magnetic, and transport properties of Fe3O 4/Si(111) and Fe3O4Si(001). In: Journal of Applied Physics. 2007 ; Vol. 101, No. 12.
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abstract = "Carrier transport across Fe3 O4 Si interfaces has been studied for two different Si substrate orientations. The Fe3 O4 films exhibit a (111) texture on both (111)- and (001)-oriented substrates and field-cooling experiments show the characteristic step in film magnetization at the Verwey transition temperature of magnetite. Current-voltage measurements indicate the formation of high-quality Schottky barriers with an ideality factor of about n=1.06. Fits to the transport data using the thermionic emission/diffusion model yield Schottky barrier heights of 0.52 and 0.65 eV for Fe3 O4 Si (111) and Fe3 O4 Si (001) structures, respectively. The interface between the magnetite films and silicon substrates consists of a crystalline iron silicide/amorphous oxide bilayer with reduced magnetic moment.",
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Structural, magnetic, and transport properties of Fe3O 4/Si(111) and Fe3O4Si(001). / Boothman, C.; Sanchez, A. M.; Van Dijken, Sebastiaan (Corresponding Author).

In: Journal of Applied Physics, Vol. 101, No. 12, 123903, 2007.

Research output: Contribution to journalArticleScientificpeer-review

TY - JOUR

T1 - Structural, magnetic, and transport properties of Fe3O 4/Si(111) and Fe3O4Si(001)

AU - Boothman, C.

AU - Sanchez, A. M.

AU - Van Dijken, Sebastiaan

PY - 2007

Y1 - 2007

N2 - Carrier transport across Fe3 O4 Si interfaces has been studied for two different Si substrate orientations. The Fe3 O4 films exhibit a (111) texture on both (111)- and (001)-oriented substrates and field-cooling experiments show the characteristic step in film magnetization at the Verwey transition temperature of magnetite. Current-voltage measurements indicate the formation of high-quality Schottky barriers with an ideality factor of about n=1.06. Fits to the transport data using the thermionic emission/diffusion model yield Schottky barrier heights of 0.52 and 0.65 eV for Fe3 O4 Si (111) and Fe3 O4 Si (001) structures, respectively. The interface between the magnetite films and silicon substrates consists of a crystalline iron silicide/amorphous oxide bilayer with reduced magnetic moment.

AB - Carrier transport across Fe3 O4 Si interfaces has been studied for two different Si substrate orientations. The Fe3 O4 films exhibit a (111) texture on both (111)- and (001)-oriented substrates and field-cooling experiments show the characteristic step in film magnetization at the Verwey transition temperature of magnetite. Current-voltage measurements indicate the formation of high-quality Schottky barriers with an ideality factor of about n=1.06. Fits to the transport data using the thermionic emission/diffusion model yield Schottky barrier heights of 0.52 and 0.65 eV for Fe3 O4 Si (111) and Fe3 O4 Si (001) structures, respectively. The interface between the magnetite films and silicon substrates consists of a crystalline iron silicide/amorphous oxide bilayer with reduced magnetic moment.

KW - iron compounds

KW - silicon

KW - elemental semiconductors

KW - semiconductor-insulator boundaries

KW - magnetic thin films

KW - magnetisation

KW - metal-insulator transition

KW - Schottky barriers

KW - diffusion

KW - magnetic moments

KW - interface structure

U2 - 10.1063/1.2745290

DO - 10.1063/1.2745290

M3 - Article

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JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

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ER -