Abstract
Bismuth (Bi) is a surfactant which controls the electronic and structural properties of epitaxially grown GaInAs and GaInP alloys. The authors have studied Bi-terminated surfaces of GaInAs(100) layers, deposited onto InP(100) substrates, by means of scanning tunneling microscopy and spectroscopy and x-ray photoelectron spectroscopy. It appears that Bi stabilizes an interesting (2×1) surface reconstruction on GaInAs(100). Under certain conditions, this reconstruction undergoes a phase transition to (2×4), which has about one-half of the Bi content of the (2×1) surface. Based on the experimental findings, they discuss mechanisms leading to this phase transition.
| Original language | English |
|---|---|
| Article number | 082101 |
| Journal | Applied Physics Letters |
| Volume | 90 |
| Issue number | 8 |
| DOIs | |
| Publication status | Published - 2007 |
| MoE publication type | A1 Journal article-refereed |
Funding
This work was supported in part by the Academy of Finland within a national TULE / QUEST program. One of the authors (M.A.-T.) acknowledges support from the Finnish Cultural Foundation.