Structural properties of Bi-stabilized reconstructions of GaInAs(100) surface

  • Pasi Laukkanen*
  • , M. Ahola-Tuomi
  • , M. Kuzmin
  • , R.E. Perälä
  • , I.J. Väyrynen
  • , A. Tukiainen
  • , Janne Pakarinen
  • , M. Saarinen
  • , M. Pessa
  • *Corresponding author for this work

Research output: Contribution to journalArticleScientificpeer-review

16 Citations (Scopus)

Abstract

Bismuth (Bi) is a surfactant which controls the electronic and structural properties of epitaxially grown GaInAs and GaInP alloys. The authors have studied Bi-terminated surfaces of GaInAs(100) layers, deposited onto InP(100) substrates, by means of scanning tunneling microscopy and spectroscopy and x-ray photoelectron spectroscopy. It appears that Bi stabilizes an interesting (2×1) surface reconstruction on GaInAs(100). Under certain conditions, this reconstruction undergoes a phase transition to (2×4), which has about one-half of the Bi content of the (2×1) surface. Based on the experimental findings, they discuss mechanisms leading to this phase transition.

Original languageEnglish
Article number082101
JournalApplied Physics Letters
Volume90
Issue number8
DOIs
Publication statusPublished - 2007
MoE publication typeA1 Journal article-refereed

Funding

This work was supported in part by the Academy of Finland within a national TULE / QUEST program. One of the authors (M.A.-T.) acknowledges support from the Finnish Cultural Foundation.

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