Structural properties of Ge-implanted Si1xGex layers

Z. Xia, EO O. Ristolainen, H. Ronkainen, J. Saarilahti, K. Grahn, J. Molarius

    Research output: Contribution to journalArticleScientificpeer-review

    2 Citations (Scopus)

    Abstract

    The structural properties of epitaxial Si1 - xGex layers formed by high-dose germanium implantation have been studied. Transmission electron microscopy (TEM) and Rutherford backscattering channeling (RBS-C) were employed to evaluate the annealing behavior of radiation damage. The depth profiles of impurities and dopants of O, C, F, and Ge were measured by secondary-ion mass spectroscopy (SIMS). Defect-free epitaxial regrowth through rapid thermal annealing (RTA) at 1100 °C for 10 s was observed for the silicon layer implanted by 50-keV Ge+ ions. However, a great number of end-of-range (EOR) dislocation loops were left with the same RTA process when the silicon layer was implanted by 100-keV Ge+ ions. The EOR damage density was considerably reduced with an increase in the RTA time; consequently, dislocation defects disappeared after RTA at 1100 °C for 200 s. This was confirmed by TEM. Further SIMS studies showed that out-diffusion of impurities of O, C, and F towards surfaces was accompanied by a reduction of residual EOR damaged.

    Original languageEnglish
    Pages (from-to)1071-1075
    Number of pages5
    JournalVacuum
    Volume46
    Issue number8-10
    DOIs
    Publication statusPublished - 1995
    MoE publication typeA1 Journal article-refereed

    Fingerprint

    Rapid thermal annealing
    Structural properties
    Ions
    annealing
    Silicon
    Spectroscopy
    Impurities
    Germanium
    Transmission electron microscopy
    ions
    mass spectroscopy
    Defects
    Radiation damage
    Rutherford backscattering spectroscopy
    impurities
    transmission electron microscopy
    defects
    silicon
    radiation damage
    Doping (additives)

    Keywords

    • secondary ion mass spectroscopy
    • Rutherford backscattering channeling
    • impurity depth profiles
    • high-dose germanium implantation

    Cite this

    Xia, Z. ; Ristolainen, EO O. ; Ronkainen, H. ; Saarilahti, J. ; Grahn, K. ; Molarius, J. / Structural properties of Ge-implanted Si1xGex layers. In: Vacuum. 1995 ; Vol. 46, No. 8-10. pp. 1071-1075.
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    title = "Structural properties of Ge-implanted Si1 − xGex layers",
    abstract = "The structural properties of epitaxial Si1 - xGex layers formed by high-dose germanium implantation have been studied. Transmission electron microscopy (TEM) and Rutherford backscattering channeling (RBS-C) were employed to evaluate the annealing behavior of radiation damage. The depth profiles of impurities and dopants of O, C, F, and Ge were measured by secondary-ion mass spectroscopy (SIMS). Defect-free epitaxial regrowth through rapid thermal annealing (RTA) at 1100 °C for 10 s was observed for the silicon layer implanted by 50-keV Ge+ ions. However, a great number of end-of-range (EOR) dislocation loops were left with the same RTA process when the silicon layer was implanted by 100-keV Ge+ ions. The EOR damage density was considerably reduced with an increase in the RTA time; consequently, dislocation defects disappeared after RTA at 1100 °C for 200 s. This was confirmed by TEM. Further SIMS studies showed that out-diffusion of impurities of O, C, and F towards surfaces was accompanied by a reduction of residual EOR damaged.",
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    author = "Z. Xia and Ristolainen, {EO O.} and H. Ronkainen and J. Saarilahti and K. Grahn and J. Molarius",
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    Xia, Z, Ristolainen, EOO, Ronkainen, H, Saarilahti, J, Grahn, K & Molarius, J 1995, 'Structural properties of Ge-implanted Si1xGex layers', Vacuum, vol. 46, no. 8-10, pp. 1071-1075. https://doi.org/10.1016/0042-207X(95)00109-3

    Structural properties of Ge-implanted Si1xGex layers. / Xia, Z.; Ristolainen, EO O.; Ronkainen, H.; Saarilahti, J.; Grahn, K.; Molarius, J.

    In: Vacuum, Vol. 46, No. 8-10, 1995, p. 1071-1075.

    Research output: Contribution to journalArticleScientificpeer-review

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    AU - Xia, Z.

    AU - Ristolainen, EO O.

    AU - Ronkainen, H.

    AU - Saarilahti, J.

    AU - Grahn, K.

    AU - Molarius, J.

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    N2 - The structural properties of epitaxial Si1 - xGex layers formed by high-dose germanium implantation have been studied. Transmission electron microscopy (TEM) and Rutherford backscattering channeling (RBS-C) were employed to evaluate the annealing behavior of radiation damage. The depth profiles of impurities and dopants of O, C, F, and Ge were measured by secondary-ion mass spectroscopy (SIMS). Defect-free epitaxial regrowth through rapid thermal annealing (RTA) at 1100 °C for 10 s was observed for the silicon layer implanted by 50-keV Ge+ ions. However, a great number of end-of-range (EOR) dislocation loops were left with the same RTA process when the silicon layer was implanted by 100-keV Ge+ ions. The EOR damage density was considerably reduced with an increase in the RTA time; consequently, dislocation defects disappeared after RTA at 1100 °C for 200 s. This was confirmed by TEM. Further SIMS studies showed that out-diffusion of impurities of O, C, and F towards surfaces was accompanied by a reduction of residual EOR damaged.

    AB - The structural properties of epitaxial Si1 - xGex layers formed by high-dose germanium implantation have been studied. Transmission electron microscopy (TEM) and Rutherford backscattering channeling (RBS-C) were employed to evaluate the annealing behavior of radiation damage. The depth profiles of impurities and dopants of O, C, F, and Ge were measured by secondary-ion mass spectroscopy (SIMS). Defect-free epitaxial regrowth through rapid thermal annealing (RTA) at 1100 °C for 10 s was observed for the silicon layer implanted by 50-keV Ge+ ions. However, a great number of end-of-range (EOR) dislocation loops were left with the same RTA process when the silicon layer was implanted by 100-keV Ge+ ions. The EOR damage density was considerably reduced with an increase in the RTA time; consequently, dislocation defects disappeared after RTA at 1100 °C for 200 s. This was confirmed by TEM. Further SIMS studies showed that out-diffusion of impurities of O, C, and F towards surfaces was accompanied by a reduction of residual EOR damaged.

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