Abstract
The structural properties of epitaxial Si1 - xGex layers formed by high-dose germanium implantation have been studied. Transmission electron microscopy (TEM) and Rutherford backscattering channeling (RBS-C) were employed to evaluate the annealing behavior of radiation damage. The depth profiles of impurities and dopants of O, C, F, and Ge were measured by secondary-ion mass spectroscopy (SIMS). Defect-free epitaxial regrowth through rapid thermal annealing (RTA) at 1100 °C for 10 s was observed for the silicon layer implanted by 50-keV Ge+ ions. However, a great number of end-of-range (EOR) dislocation loops were left with the same RTA process when the silicon layer was implanted by 100-keV Ge+ ions. The EOR damage density was considerably reduced with an increase in the RTA time; consequently, dislocation defects disappeared after RTA at 1100 °C for 200 s. This was confirmed by TEM. Further SIMS studies showed that out-diffusion of impurities of O, C, and F towards surfaces was accompanied by a reduction of residual EOR damaged.
| Original language | English |
|---|---|
| Pages (from-to) | 1071-1075 |
| Number of pages | 5 |
| Journal | Vacuum |
| Volume | 46 |
| Issue number | 8-10 |
| DOIs | |
| Publication status | Published - 1995 |
| MoE publication type | A1 Journal article-refereed |
Funding
This work was sponsored by the Technical Research Centre of Finland (VTT). The authors are grateful to Dr T Wiik and Professors P Kuivalainen and T Tuomi for continuous encouragement as well as to MS P Korpiala and Professor W Lin for technical help.
Keywords
- secondary ion mass spectroscopy
- Rutherford backscattering channeling
- impurity depth profiles
- high-dose germanium implantation