Structural properties of Ge-implanted Si1xGex layers

Z. Xia, EO O. Ristolainen, H. Ronkainen, J. Saarilahti, K. Grahn, J. Molarius

Research output: Contribution to journalArticleScientificpeer-review

2 Citations (Scopus)

Abstract

The structural properties of epitaxial Si1 - xGex layers formed by high-dose germanium implantation have been studied. Transmission electron microscopy (TEM) and Rutherford backscattering channeling (RBS-C) were employed to evaluate the annealing behavior of radiation damage. The depth profiles of impurities and dopants of O, C, F, and Ge were measured by secondary-ion mass spectroscopy (SIMS). Defect-free epitaxial regrowth through rapid thermal annealing (RTA) at 1100 °C for 10 s was observed for the silicon layer implanted by 50-keV Ge+ ions. However, a great number of end-of-range (EOR) dislocation loops were left with the same RTA process when the silicon layer was implanted by 100-keV Ge+ ions. The EOR damage density was considerably reduced with an increase in the RTA time; consequently, dislocation defects disappeared after RTA at 1100 °C for 200 s. This was confirmed by TEM. Further SIMS studies showed that out-diffusion of impurities of O, C, and F towards surfaces was accompanied by a reduction of residual EOR damaged.

Original languageEnglish
Pages (from-to)1071-1075
Number of pages5
JournalVacuum
Volume46
Issue number8-10
DOIs
Publication statusPublished - 1995
MoE publication typeA1 Journal article-refereed

Fingerprint

Rapid thermal annealing
Structural properties
Ions
annealing
Silicon
Spectroscopy
Impurities
Germanium
Transmission electron microscopy
ions
mass spectroscopy
Defects
Radiation damage
Rutherford backscattering spectroscopy
impurities
transmission electron microscopy
defects
silicon
radiation damage
Doping (additives)

Keywords

  • secondary ion mass spectroscopy
  • Rutherford backscattering channeling
  • impurity depth profiles
  • high-dose germanium implantation

Cite this

Xia, Z. ; Ristolainen, EO O. ; Ronkainen, H. ; Saarilahti, J. ; Grahn, K. ; Molarius, J. / Structural properties of Ge-implanted Si1xGex layers. In: Vacuum. 1995 ; Vol. 46, No. 8-10. pp. 1071-1075.
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abstract = "The structural properties of epitaxial Si1 - xGex layers formed by high-dose germanium implantation have been studied. Transmission electron microscopy (TEM) and Rutherford backscattering channeling (RBS-C) were employed to evaluate the annealing behavior of radiation damage. The depth profiles of impurities and dopants of O, C, F, and Ge were measured by secondary-ion mass spectroscopy (SIMS). Defect-free epitaxial regrowth through rapid thermal annealing (RTA) at 1100 °C for 10 s was observed for the silicon layer implanted by 50-keV Ge+ ions. However, a great number of end-of-range (EOR) dislocation loops were left with the same RTA process when the silicon layer was implanted by 100-keV Ge+ ions. The EOR damage density was considerably reduced with an increase in the RTA time; consequently, dislocation defects disappeared after RTA at 1100 °C for 200 s. This was confirmed by TEM. Further SIMS studies showed that out-diffusion of impurities of O, C, and F towards surfaces was accompanied by a reduction of residual EOR damaged.",
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author = "Z. Xia and Ristolainen, {EO O.} and H. Ronkainen and J. Saarilahti and K. Grahn and J. Molarius",
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Xia, Z, Ristolainen, EOO, Ronkainen, H, Saarilahti, J, Grahn, K & Molarius, J 1995, 'Structural properties of Ge-implanted Si1xGex layers', Vacuum, vol. 46, no. 8-10, pp. 1071-1075. https://doi.org/10.1016/0042-207X(95)00109-3

Structural properties of Ge-implanted Si1xGex layers. / Xia, Z.; Ristolainen, EO O.; Ronkainen, H.; Saarilahti, J.; Grahn, K.; Molarius, J.

In: Vacuum, Vol. 46, No. 8-10, 1995, p. 1071-1075.

Research output: Contribution to journalArticleScientificpeer-review

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T1 - Structural properties of Ge-implanted Si1 − xGex layers

AU - Xia, Z.

AU - Ristolainen, EO O.

AU - Ronkainen, H.

AU - Saarilahti, J.

AU - Grahn, K.

AU - Molarius, J.

PY - 1995

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N2 - The structural properties of epitaxial Si1 - xGex layers formed by high-dose germanium implantation have been studied. Transmission electron microscopy (TEM) and Rutherford backscattering channeling (RBS-C) were employed to evaluate the annealing behavior of radiation damage. The depth profiles of impurities and dopants of O, C, F, and Ge were measured by secondary-ion mass spectroscopy (SIMS). Defect-free epitaxial regrowth through rapid thermal annealing (RTA) at 1100 °C for 10 s was observed for the silicon layer implanted by 50-keV Ge+ ions. However, a great number of end-of-range (EOR) dislocation loops were left with the same RTA process when the silicon layer was implanted by 100-keV Ge+ ions. The EOR damage density was considerably reduced with an increase in the RTA time; consequently, dislocation defects disappeared after RTA at 1100 °C for 200 s. This was confirmed by TEM. Further SIMS studies showed that out-diffusion of impurities of O, C, and F towards surfaces was accompanied by a reduction of residual EOR damaged.

AB - The structural properties of epitaxial Si1 - xGex layers formed by high-dose germanium implantation have been studied. Transmission electron microscopy (TEM) and Rutherford backscattering channeling (RBS-C) were employed to evaluate the annealing behavior of radiation damage. The depth profiles of impurities and dopants of O, C, F, and Ge were measured by secondary-ion mass spectroscopy (SIMS). Defect-free epitaxial regrowth through rapid thermal annealing (RTA) at 1100 °C for 10 s was observed for the silicon layer implanted by 50-keV Ge+ ions. However, a great number of end-of-range (EOR) dislocation loops were left with the same RTA process when the silicon layer was implanted by 100-keV Ge+ ions. The EOR damage density was considerably reduced with an increase in the RTA time; consequently, dislocation defects disappeared after RTA at 1100 °C for 200 s. This was confirmed by TEM. Further SIMS studies showed that out-diffusion of impurities of O, C, and F towards surfaces was accompanied by a reduction of residual EOR damaged.

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