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Structural properties of Ge-implanted Si
1
−
x
Ge
x
layers
Z. Xia
*
, EO O. Ristolainen
, H. Ronkainen
, J. Saarilahti
, K. Grahn
, J. Molarius
*
Corresponding author for this work
VTT (former employee or external)
Aalto University
Research output
:
Contribution to journal
›
Article
›
Scientific
›
peer-review
2
Citations (Scopus)
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1
−
x
Ge
x
layers'. Together they form a unique fingerprint.
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INIS
layers
100%
annealing
100%
range
60%
silicon
40%
impurities
40%
transmission electron microscopy
40%
kev range
40%
ions
40%
mass spectroscopy
40%
defects
40%
dislocations
40%
epitaxy
40%
germanium ions
40%
density
20%
surfaces
20%
doped materials
20%
reduction
20%
diffusion
20%
doses
20%
damage
20%
radiation effects
20%
depth
20%
rutherford backscattering spectroscopy
20%
germanium
20%
channeling
20%
Keyphrases
Structural Properties
100%
Rapid Thermal Annealing
100%
Si1-xGex
100%
Impurities
50%
Secondary Ion Mass Spectrometry
50%
Transmission Electron Microscopy
50%
Silicon Layer
50%
Depth Profile
25%
High Dose
25%
Spectroscopy Studies
25%
Dopant
25%
Germanium
25%
Rutherford Backscattering
25%
Epitaxial
25%
Annealing Time
25%
Dislocation Loops
25%
Radiation Damage
25%
Annealing Behavior
25%
Out-diffusion
25%
Number of Ends
25%
Dislocation Defect
25%
Damage Density
25%
Epitaxial Regrowth
25%
Material Science
Structural Property
100%
Annealing
100%
Transmission Electron Microscopy
50%
Secondary Ion Mass Spectrometry
50%
Silicon
50%
Germanium Ion
50%
Doping (Additives)
25%
Germanium
25%
Radiation Damage
25%
Density
25%
Surface (Surface Science)
25%
Engineering
Rapid Thermal Annealing
100%
Structural Property
100%
Silicon Layer
50%
Depth Profile
25%
Dopants
25%
Great Number
25%
Annealing Time
25%
Radiation Effect
25%
Annealing Process
25%
Dislocation Loop
25%
Channelling
25%
Chemistry
Secondary Ion Mass Spectroscopy
50%
Silicon
50%
Germanium Ion
50%
Transmission Electron Microscopy
50%
Doping Material
25%
Rutherford Backscattering Spectroscopy
25%
Dislocation Loop
25%
Germanium
25%
Radiation Effect
25%