Abstract
In this Thesis, technologically important III-V semiconductors are studied. Structural and electronic properties of bismuth (Bi) stabilized InP(100) and GaAsN(100) are explored. Atomic models for the Bi-stabilized surfaces are proposed and differences in electronic properties are explained by the size effects. A similar “surface scientific view point” is adapted to molecular beam epitaxy growth of GaAs/AlAs quantum well structures, where the optimum growth parameters were found to depend on GaAs(100) and AlAs(100) surface reconstructions. The effect of beryllium doping on optical and structural properties of GaInAsN/GaAs quantum wells, GaInAs/GaAs quantum wells, and InAs/GaAs quantum dots are studied. It was found that Be had a tendency to passivate crystal defects and slightly lower threshold current densities of 980-nm diode lasers prepared in this work.
| Original language | English |
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| Qualification | Doctor Degree |
| Awarding Institution |
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| Award date | 25 Sept 2009 |
| Place of Publication | Tampere |
| Publisher | |
| Print ISBNs | 978-952-15-2219-2 |
| Electronic ISBNs | 978-952-15-2264-2 |
| Publication status | Published - 2009 |
| MoE publication type | G5 Doctoral dissertation (article) |