Studies of III-V Semiconductors, From Surface Reconstructions to Quantum Nanostructures

Dissertation

Janne Pakarinen

Research output: ThesisDissertationCollection of Articles

Abstract

In this Thesis, technologically important III-V semiconductors are studied. Structural and electronic properties of bismuth (Bi) stabilized InP(100) and GaAsN(100) are explored. Atomic models for the Bi-stabilized surfaces are proposed and differences in electronic properties are explained by the size effects. A similar “surface scientific view point” is adapted to molecular beam epitaxy growth of GaAs/AlAs quantum well structures, where the optimum growth parameters were found to depend on GaAs(100) and AlAs(100) surface reconstructions. The effect of beryllium doping on optical and structural properties of GaInAsN/GaAs quantum wells, GaInAs/GaAs quantum wells, and InAs/GaAs quantum dots are studied. It was found that Be had a tendency to passivate crystal defects and slightly lower threshold current densities of 980-nm diode lasers prepared in this work.
Original languageEnglish
QualificationDoctor Degree
Awarding Institution
  • Tampere University of Technology (TUT)
Award date25 Sep 2009
Place of PublicationTampere
Publisher
Print ISBNs978-952-15-2219-2
Electronic ISBNs978-952-15-2264-2
Publication statusPublished - 2009
MoE publication typeG5 Doctoral dissertation (article)

Fingerprint

quantum wells
bismuth
theses
beryllium
threshold currents
electronics
crystal defects
tendencies
molecular beam epitaxy
semiconductor lasers
quantum dots
current density
optical properties

Cite this

Pakarinen, Janne. / Studies of III-V Semiconductors, From Surface Reconstructions to Quantum Nanostructures : Dissertation. Tampere : Tampere University of Technology, 2009. 92 p.
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title = "Studies of III-V Semiconductors, From Surface Reconstructions to Quantum Nanostructures: Dissertation",
abstract = "In this Thesis, technologically important III-V semiconductors are studied. Structural and electronic properties of bismuth (Bi) stabilized InP(100) and GaAsN(100) are explored. Atomic models for the Bi-stabilized surfaces are proposed and differences in electronic properties are explained by the size effects. A similar “surface scientific view point” is adapted to molecular beam epitaxy growth of GaAs/AlAs quantum well structures, where the optimum growth parameters were found to depend on GaAs(100) and AlAs(100) surface reconstructions. The effect of beryllium doping on optical and structural properties of GaInAsN/GaAs quantum wells, GaInAs/GaAs quantum wells, and InAs/GaAs quantum dots are studied. It was found that Be had a tendency to passivate crystal defects and slightly lower threshold current densities of 980-nm diode lasers prepared in this work.",
author = "Janne Pakarinen",
note = "TK202 46 p. + App.",
year = "2009",
language = "English",
isbn = "978-952-15-2219-2",
series = "TTY Julkaisu - TUT Publication",
publisher = "Tampere University of Technology",
address = "Finland",
school = "Tampere University of Technology (TUT)",

}

Pakarinen, J 2009, 'Studies of III-V Semiconductors, From Surface Reconstructions to Quantum Nanostructures: Dissertation', Doctor Degree, Tampere University of Technology (TUT), Tampere.

Studies of III-V Semiconductors, From Surface Reconstructions to Quantum Nanostructures : Dissertation. / Pakarinen, Janne.

Tampere : Tampere University of Technology, 2009. 92 p.

Research output: ThesisDissertationCollection of Articles

TY - THES

T1 - Studies of III-V Semiconductors, From Surface Reconstructions to Quantum Nanostructures

T2 - Dissertation

AU - Pakarinen, Janne

N1 - TK202 46 p. + App.

PY - 2009

Y1 - 2009

N2 - In this Thesis, technologically important III-V semiconductors are studied. Structural and electronic properties of bismuth (Bi) stabilized InP(100) and GaAsN(100) are explored. Atomic models for the Bi-stabilized surfaces are proposed and differences in electronic properties are explained by the size effects. A similar “surface scientific view point” is adapted to molecular beam epitaxy growth of GaAs/AlAs quantum well structures, where the optimum growth parameters were found to depend on GaAs(100) and AlAs(100) surface reconstructions. The effect of beryllium doping on optical and structural properties of GaInAsN/GaAs quantum wells, GaInAs/GaAs quantum wells, and InAs/GaAs quantum dots are studied. It was found that Be had a tendency to passivate crystal defects and slightly lower threshold current densities of 980-nm diode lasers prepared in this work.

AB - In this Thesis, technologically important III-V semiconductors are studied. Structural and electronic properties of bismuth (Bi) stabilized InP(100) and GaAsN(100) are explored. Atomic models for the Bi-stabilized surfaces are proposed and differences in electronic properties are explained by the size effects. A similar “surface scientific view point” is adapted to molecular beam epitaxy growth of GaAs/AlAs quantum well structures, where the optimum growth parameters were found to depend on GaAs(100) and AlAs(100) surface reconstructions. The effect of beryllium doping on optical and structural properties of GaInAsN/GaAs quantum wells, GaInAs/GaAs quantum wells, and InAs/GaAs quantum dots are studied. It was found that Be had a tendency to passivate crystal defects and slightly lower threshold current densities of 980-nm diode lasers prepared in this work.

M3 - Dissertation

SN - 978-952-15-2219-2

T3 - TTY Julkaisu - TUT Publication

PB - Tampere University of Technology

CY - Tampere

ER -

Pakarinen J. Studies of III-V Semiconductors, From Surface Reconstructions to Quantum Nanostructures: Dissertation. Tampere: Tampere University of Technology, 2009. 92 p.