Keyphrases
Structural Properties
100%
III-V Semiconductors
100%
Quantum Nanostructures
100%
Electronic Properties
100%
GaAs Quantum Well
100%
Bismuth
100%
Surface Reconstruction
100%
Optical Properties
50%
GaAs Quantum Dot
50%
GaAsN
50%
Size Effect
50%
Atomic Model
50%
Low Threshold Current Density
50%
(100) Surfaces
50%
Quantum Well Structure
50%
Gallium Arsenide
50%
Optimum Growth
50%
980 Nm Laser
50%
GaInAsN
50%
GaAs(100)
50%
Scientific View
50%
GaInAs
50%
Growth Parameters
50%
Crystal Defects
50%
Molecular Beam Epitaxy
50%
Beryllium Doping
50%
IN100
50%
Passivated
50%
INIS
surfaces
100%
nanostructures
100%
semiconductor materials
100%
gallium arsenides
100%
quantum wells
60%
growth
40%
bismuth
40%
aluminium arsenides
40%
size
20%
lasers
20%
beryllium
20%
current density
20%
indium phosphides
20%
indium arsenides
20%
molecular beam epitaxy
20%
quantum dots
20%
threshold current
20%
atomic models
20%
crystal defects
20%
Material Science
Gallium Arsenide
100%
Surface Reconstruction
100%
III-V Semiconductor
100%
Nanocrystalline Material
100%
Quantum Well
60%
Electronic Property
40%
Bismuth
40%
Beryllium
20%
Structural Property
20%
Laser Diode
20%
Molecular Beam Epitaxy
20%
Density
20%
Crystal Defect
20%
Quantum Dot
20%
Engineering
Gallium Arsenide
100%
III-V Semiconductor
100%
Quantum Well
60%
Growth Parameter
20%
Defects
20%
Threshold Current Density
20%
Quantum Dot
20%
Structural Property
20%
Size Effect
20%
Physics
Quantum Wells
100%
Semiconductor Laser
33%
Crystal Defect
33%
Molecular Beam Epitaxy
33%
Quantum Dot
33%