Studies on aluminium corrosion during and after HF vapour treatment

Heini Ritala (Corresponding Author), Jyrki Kiihamäki, Mikko Heikkilä

    Research output: Contribution to journalArticleScientificpeer-review

    8 Citations (Scopus)

    Abstract

    The behaviour of aluminium during anhydrous hydrofluoric acid (HF) vapour etching of silicon dioxide films deposited by different methods was studied. Silicon dioxide films were grown by plasma-enhanced chemical vapour deposition (PECVD), low-pressure chemical vapour deposition (LPCVD), and a thermally oxidizing method. The etch rate of different oxides varies a lot. Etching of PECVD oxide causes residues on the aluminium surface as LPCVD and thermal oxide do not. The origin of the residues and different preventative methods are proposed.
    Original languageEnglish
    Pages (from-to)501-504
    Number of pages4
    JournalMicroelectronic Engineering
    Volume87
    Issue number3
    DOIs
    Publication statusPublished - 2010
    MoE publication typeA1 Journal article-refereed

    Fingerprint

    Aluminum corrosion
    Hydrofluoric Acid
    Hydrofluoric acid
    hydrofluoric acid
    Oxides
    Low pressure chemical vapor deposition
    corrosion
    Vapors
    vapor deposition
    vapors
    Plasma enhanced chemical vapor deposition
    Aluminum
    aluminum
    Silicon Dioxide
    Etching
    Silica
    oxides
    low pressure
    etching
    silicon dioxide

    Keywords

    • aluminium
    • corrosion
    • ETCH
    • HF vapour
    • MEMS
    • sacrificial oxide etch
    • silicon dioxide
    • hydrofluoric acid

    Cite this

    Ritala, Heini ; Kiihamäki, Jyrki ; Heikkilä, Mikko. / Studies on aluminium corrosion during and after HF vapour treatment. In: Microelectronic Engineering. 2010 ; Vol. 87, No. 3. pp. 501-504.
    @article{39bad59fde4246d490ed9f1157172338,
    title = "Studies on aluminium corrosion during and after HF vapour treatment",
    abstract = "The behaviour of aluminium during anhydrous hydrofluoric acid (HF) vapour etching of silicon dioxide films deposited by different methods was studied. Silicon dioxide films were grown by plasma-enhanced chemical vapour deposition (PECVD), low-pressure chemical vapour deposition (LPCVD), and a thermally oxidizing method. The etch rate of different oxides varies a lot. Etching of PECVD oxide causes residues on the aluminium surface as LPCVD and thermal oxide do not. The origin of the residues and different preventative methods are proposed.",
    keywords = "aluminium, corrosion, ETCH, HF vapour, MEMS, sacrificial oxide etch, silicon dioxide, hydrofluoric acid",
    author = "Heini Ritala and Jyrki Kiiham{\"a}ki and Mikko Heikkil{\"a}",
    note = "Project code: 14311",
    year = "2010",
    doi = "10.1016/j.mee.2009.07.005",
    language = "English",
    volume = "87",
    pages = "501--504",
    journal = "Microelectronic Engineering",
    issn = "0167-9317",
    publisher = "Elsevier",
    number = "3",

    }

    Studies on aluminium corrosion during and after HF vapour treatment. / Ritala, Heini (Corresponding Author); Kiihamäki, Jyrki; Heikkilä, Mikko.

    In: Microelectronic Engineering, Vol. 87, No. 3, 2010, p. 501-504.

    Research output: Contribution to journalArticleScientificpeer-review

    TY - JOUR

    T1 - Studies on aluminium corrosion during and after HF vapour treatment

    AU - Ritala, Heini

    AU - Kiihamäki, Jyrki

    AU - Heikkilä, Mikko

    N1 - Project code: 14311

    PY - 2010

    Y1 - 2010

    N2 - The behaviour of aluminium during anhydrous hydrofluoric acid (HF) vapour etching of silicon dioxide films deposited by different methods was studied. Silicon dioxide films were grown by plasma-enhanced chemical vapour deposition (PECVD), low-pressure chemical vapour deposition (LPCVD), and a thermally oxidizing method. The etch rate of different oxides varies a lot. Etching of PECVD oxide causes residues on the aluminium surface as LPCVD and thermal oxide do not. The origin of the residues and different preventative methods are proposed.

    AB - The behaviour of aluminium during anhydrous hydrofluoric acid (HF) vapour etching of silicon dioxide films deposited by different methods was studied. Silicon dioxide films were grown by plasma-enhanced chemical vapour deposition (PECVD), low-pressure chemical vapour deposition (LPCVD), and a thermally oxidizing method. The etch rate of different oxides varies a lot. Etching of PECVD oxide causes residues on the aluminium surface as LPCVD and thermal oxide do not. The origin of the residues and different preventative methods are proposed.

    KW - aluminium

    KW - corrosion

    KW - ETCH

    KW - HF vapour

    KW - MEMS

    KW - sacrificial oxide etch

    KW - silicon dioxide

    KW - hydrofluoric acid

    U2 - 10.1016/j.mee.2009.07.005

    DO - 10.1016/j.mee.2009.07.005

    M3 - Article

    VL - 87

    SP - 501

    EP - 504

    JO - Microelectronic Engineering

    JF - Microelectronic Engineering

    SN - 0167-9317

    IS - 3

    ER -