Studies on aluminium corrosion during and after HF vapour treatment

Heini Ritala (Corresponding Author), Jyrki Kiihamäki, Mikko Heikkilä

Research output: Contribution to journalArticleScientificpeer-review

8 Citations (Scopus)

Abstract

The behaviour of aluminium during anhydrous hydrofluoric acid (HF) vapour etching of silicon dioxide films deposited by different methods was studied. Silicon dioxide films were grown by plasma-enhanced chemical vapour deposition (PECVD), low-pressure chemical vapour deposition (LPCVD), and a thermally oxidizing method. The etch rate of different oxides varies a lot. Etching of PECVD oxide causes residues on the aluminium surface as LPCVD and thermal oxide do not. The origin of the residues and different preventative methods are proposed.
Original languageEnglish
Pages (from-to)501-504
Number of pages4
JournalMicroelectronic Engineering
Volume87
Issue number3
DOIs
Publication statusPublished - 2010
MoE publication typeA1 Journal article-refereed

Fingerprint

Aluminum corrosion
Hydrofluoric Acid
Hydrofluoric acid
hydrofluoric acid
Oxides
Low pressure chemical vapor deposition
corrosion
Vapors
vapor deposition
vapors
Plasma enhanced chemical vapor deposition
Aluminum
aluminum
Silicon Dioxide
Etching
Silica
oxides
low pressure
etching
silicon dioxide

Keywords

  • aluminium
  • corrosion
  • ETCH
  • HF vapour
  • MEMS
  • sacrificial oxide etch
  • silicon dioxide
  • hydrofluoric acid

Cite this

Ritala, Heini ; Kiihamäki, Jyrki ; Heikkilä, Mikko. / Studies on aluminium corrosion during and after HF vapour treatment. In: Microelectronic Engineering. 2010 ; Vol. 87, No. 3. pp. 501-504.
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keywords = "aluminium, corrosion, ETCH, HF vapour, MEMS, sacrificial oxide etch, silicon dioxide, hydrofluoric acid",
author = "Heini Ritala and Jyrki Kiiham{\"a}ki and Mikko Heikkil{\"a}",
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Studies on aluminium corrosion during and after HF vapour treatment. / Ritala, Heini (Corresponding Author); Kiihamäki, Jyrki; Heikkilä, Mikko.

In: Microelectronic Engineering, Vol. 87, No. 3, 2010, p. 501-504.

Research output: Contribution to journalArticleScientificpeer-review

TY - JOUR

T1 - Studies on aluminium corrosion during and after HF vapour treatment

AU - Ritala, Heini

AU - Kiihamäki, Jyrki

AU - Heikkilä, Mikko

N1 - Project code: 14311

PY - 2010

Y1 - 2010

N2 - The behaviour of aluminium during anhydrous hydrofluoric acid (HF) vapour etching of silicon dioxide films deposited by different methods was studied. Silicon dioxide films were grown by plasma-enhanced chemical vapour deposition (PECVD), low-pressure chemical vapour deposition (LPCVD), and a thermally oxidizing method. The etch rate of different oxides varies a lot. Etching of PECVD oxide causes residues on the aluminium surface as LPCVD and thermal oxide do not. The origin of the residues and different preventative methods are proposed.

AB - The behaviour of aluminium during anhydrous hydrofluoric acid (HF) vapour etching of silicon dioxide films deposited by different methods was studied. Silicon dioxide films were grown by plasma-enhanced chemical vapour deposition (PECVD), low-pressure chemical vapour deposition (LPCVD), and a thermally oxidizing method. The etch rate of different oxides varies a lot. Etching of PECVD oxide causes residues on the aluminium surface as LPCVD and thermal oxide do not. The origin of the residues and different preventative methods are proposed.

KW - aluminium

KW - corrosion

KW - ETCH

KW - HF vapour

KW - MEMS

KW - sacrificial oxide etch

KW - silicon dioxide

KW - hydrofluoric acid

U2 - 10.1016/j.mee.2009.07.005

DO - 10.1016/j.mee.2009.07.005

M3 - Article

VL - 87

SP - 501

EP - 504

JO - Microelectronic Engineering

JF - Microelectronic Engineering

SN - 0167-9317

IS - 3

ER -