Studies on aluminium corrosion during and after HF vapour treatment

Heini Ritala (Corresponding Author), Jyrki Kiihamäki, Mikko Heikkilä

    Research output: Contribution to journalArticleScientificpeer-review

    10 Citations (Scopus)

    Abstract

    The behaviour of aluminium during anhydrous hydrofluoric acid (HF) vapour etching of silicon dioxide films deposited by different methods was studied. Silicon dioxide films were grown by plasma-enhanced chemical vapour deposition (PECVD), low-pressure chemical vapour deposition (LPCVD), and a thermally oxidizing method. The etch rate of different oxides varies a lot. Etching of PECVD oxide causes residues on the aluminium surface as LPCVD and thermal oxide do not. The origin of the residues and different preventative methods are proposed.
    Original languageEnglish
    Pages (from-to)501-504
    Number of pages4
    JournalMicroelectronic Engineering
    Volume87
    Issue number3
    DOIs
    Publication statusPublished - 2010
    MoE publication typeA1 Journal article-refereed

    Keywords

    • aluminium
    • corrosion
    • ETCH
    • HF vapour
    • MEMS
    • sacrificial oxide etch
    • silicon dioxide
    • hydrofluoric acid

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