Abstract
The behaviour of aluminium during anhydrous hydrofluoric acid (HF) vapour etching of silicon dioxide films deposited by different methods was studied. Silicon dioxide films were grown by plasma-enhanced chemical vapour deposition (PECVD), low-pressure chemical vapour deposition (LPCVD), and a thermally oxidizing method. The etch rate of different oxides varies a lot. Etching of PECVD oxide causes residues on the aluminium surface as LPCVD and thermal oxide do not. The origin of the residues and different preventative methods are proposed.
Original language | English |
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Pages (from-to) | 501-504 |
Number of pages | 4 |
Journal | Microelectronic Engineering |
Volume | 87 |
Issue number | 3 |
DOIs | |
Publication status | Published - 2010 |
MoE publication type | A1 Journal article-refereed |
Keywords
- aluminium
- corrosion
- ETCH
- HF vapour
- MEMS
- sacrificial oxide etch
- silicon dioxide
- hydrofluoric acid